Energetic states in the boron nitride band gap

Лопатин, В. В.; Конусов, Ф. В.

doi:10.1016/0022-3697(92)90199-n

Cited by 44 publications

(32 citation statements)

References 13 publications

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“…Interplanar bonding is very weak with no directional bonds present, resulting in a mixture of electrostatic attraction between oppositely charged ions in adjacent planes and van der Waals bonding, similar to graphite. The band structure has been studied experimentally [8][9][10][11] and theoretically. [12][13][14] However, from the theoretical point of view the electronic properties of h-BN, especially the nature of the band gap, are not yet settled.…”

Section: Introductionmentioning

confidence: 99%

Electronic structure of superlattices of graphene and hexagonal boron nitride

2012

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CitationKaloni TP, Cheng YC, Schwingenschlögl U (2011) We study the electronic structure of superlattices consisting of graphene and hexagonal boron nitride slabs, using ab initio density functional theory. We find that the system favors a short C-B bond length at the interface between the two component materials. A sizeable band gap at the Dirac point is opened for superlattices with single graphene layers but not for superlattices with graphene bilayers. The system is promising for applications in electronic devices such as field effect transistors and metal-oxide semiconductors.

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Section: Introductionmentioning

confidence: 99%

Electronic structure of superlattices of graphene and hexagonal boron nitride

2012

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“…Boron (V B ) and nitrogen (V N ) vacancies, which form respectively acceptor and donor levels around 1 eV from the band edge [30], may also account for the luminescence process. Experiments with pBN samples made with excess of boron or nitrogen could be useful to clarify this point.…”

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confidence: 99%

Photoluminescence properties of pyrolytic boron nitride

Museur

Kanaev

2009

J Mater Sci

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Abstract.We report on spectroscopic study of pyrolytic hBN (pBN) by means of time-and energyresolved photoluminescence methods. A high purity of pBN samples (though low crystallinity) allows complementary information about excited states involved into the luminescence process. We affirm our recent conclusions about the impurity-related nature of most of the fluorescence bands in microcrystalline hBN. In addition, a broad band centred at 3.7 eV previously not considered because of its superposition with an intense structured impurity emission is attributed to the radiative recombination of deep DAPs.3

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“…However, we could not resolve the FE-related luminescence peak due to the broadening of the NBG peak. The broad deep-level emission centered at around 3.85 eV is attributed to vacancies or residual impurities such as carbon [10]. …”

Section: Methodsmentioning

confidence: 98%

Ultraviolet luminescence from hexagonal boron nitride heteroepitaxial layers on Ni(111) grown by flow‐rate modulation epitaxy

Kobayashi

Nakamura

Akasaka

et al. 2007

Physica Status Solidi (b)

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We report room-temperature (RT) observation of near-band-gap ultraviolet luminescence at a wavelength of 227 nm in cathodoluminescence from h-BN heteroepitaxial layers. The h-BN layers were grown on single crystal Ni (111) substrates by flow-rate modulation epitaxy (FME), which is based on the alternate supply of triethylboron and ammonia. The h-BN layers grown with longer NH 3 supply time exhibit stronger intensity and narrower full width of half maximum (FWHM) of the near-band-gap luminescence. X-ray diffraction measurements reveal that the FWHM of (0002) h-BN X-ray rocking curves decreases with increasing NH 3 supply time. The reduction of lattice defects in h-BN grown by FME with longer NH 3 supply time could be the reason for the improved near-band-gap ultraviolet luminescence at RT.

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Energetic states in the boron nitride band gap

Cited by 44 publications

References 13 publications

Electronic structure of superlattices of graphene and hexagonal boron nitride

Electronic structure of superlattices of graphene and hexagonal boron nitride

Photoluminescence properties of pyrolytic boron nitride

Ultraviolet luminescence from hexagonal boron nitride heteroepitaxial layers on Ni(111) grown by flow‐rate modulation epitaxy

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