Encapsulation of methylammonium lead bromide perovskite in nanoporous GaN

Abstract

Halide perovskites hold exceptional promise as cheap, low temperature solution-processed optoelectronic materials. Yet they are hindered by poor structural and chemical stability, rapidly degrading when exposed to moisture or air. We demonstrate a solution-phase method for infiltrating methylammonium lead bromide perovskite (CH3NH3PbBr3, or MAPbBr3) into nanoporous GaN which preserved the green photoluminescence of the perovskite after up to 1 year of storage under ambient conditions. Besides a protective effect, confinement within the porous GaN matrix also resulted in a blueshift of the perovskite emission with decreasing pore size, suggesting an additional templating effect of the pores on the size of the perovskite crystals within. We anticipate that our method may be generalised to related perovskite materials, offering a route to producing composites of interest for use in optoelectronic devices for various applications.

Analysis of the n-GaN electrochemical etching process and its mechanism in oxalic acid

“…21 Encapsulation of various gases and liquids in porous structures is also promising for the attainment of reversible changes of properties in such systems. 22 There are plenty of methods for manufacturing porous IIInitride materials. Dry etching methods are widely used and include reactive ion etching 23,24 and hydrogen etching.…”

“…Moreover, we demonstrate the contribution of a Pt cathode to the reaction mechanism. The experimental conguration used in this study is common among research groups, 22,[33][34][35][36] and hence, the results could address the requirements for the realization of device production with porous IIInitride architecture elements.…”

Group-III-nitride and halide-perovskite semiconductor gain media for amplified spontaneous emission and lasing applications

“…A recent demonstration by Kelvin et al [334] has also provided a promising perspective on the formation of composite structures from MAPbBr 3 and nanoporous GaN. Infiltration of MAPbBr 3 into the highly porous GaN layer via a low-temperature post-processing step may enhance spatial confinement in the perovskite within the encapsulation matrix while preserving perovskite photostability [335].…”

Nanoporous GaN/n-type GaN: A Cathode Structure for ITO-Free Perovskite Solar Cells

“…37 These desired characteristics have attracted researchers to study the combination of GaN with perovskites for new concepts of device applications such as piezo-phototronics, photovoltaics, and nanostructured LDs. [38][39][40][41][42] GaN is generally grown by metal-organic chemical vapor deposition (MOCVD) 43 , hydride vapor phase epitaxy (HVPE), 44 molecular beam epitaxy (MBE), 45 or one of other analogous pathways. 46,47 The latest growth technologies have demonstrated their capacity for mass producing GaN wafers (> 12 inches) with high throughput, low fabrication costs, and the ability to grow films not only on monocrystalline substrates but also on non-crystalline substrates such as glass and flexible polymer substrates.…”