1998
DOI: 10.1016/s0168-583x(98)00091-3
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Encapsulated semiconductor nanocrystals formed in insulators by ion beam synthesis

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Cited by 119 publications
(45 citation statements)
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“…Nanocrystals of CdS dispersed in dielectric matrices have been produced using several techniques such as melting [1], sol-gel [2], Langmuir-Blodgett [3], colloidal solution [4], deposition from the vapour phase [5], ion-implantation [6] and, more recently, in nanoporous anodised alumina films [7]. Usually the as-prepared films are amorphous at room temperature and the formation and growth of the CdS nanocrystals is induced by post-annealing for various temperatures and times.…”
Section: Introductionmentioning
confidence: 99%
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“…Nanocrystals of CdS dispersed in dielectric matrices have been produced using several techniques such as melting [1], sol-gel [2], Langmuir-Blodgett [3], colloidal solution [4], deposition from the vapour phase [5], ion-implantation [6] and, more recently, in nanoporous anodised alumina films [7]. Usually the as-prepared films are amorphous at room temperature and the formation and growth of the CdS nanocrystals is induced by post-annealing for various temperatures and times.…”
Section: Introductionmentioning
confidence: 99%
“…Usually the as-prepared films are amorphous at room temperature and the formation and growth of the CdS nanocrystals is induced by post-annealing for various temperatures and times. The size of the nanocrystals is controlled by the annealing conditions and this procedure normally requires high temperatures and several hours of operation, leading to a broad distribution of nanocrystal sizes inside the matrix [1][2][3]5,6,8]. For anodised alumina films, the nanocrystal size is imposed by the pore dimension, typically 10 nm, and for films produced by ion-beam synthesis the nanocrystals are above 20 nm, i.e.…”
Section: Introductionmentioning
confidence: 99%
“…In order to study the material properties of nanoclusters, it can be useful to embed nanoclusters in stable and inert ceramics such as MgO, which can be achieved by ion implantation and subsequent annealing. 13 It is expected that the wide-band-gap material MgO ͑7.8 eV͒ does not interact with the electronic structure of metal and semiconductor clusters. 14,7 It is also optically transparent in a large frequency band, which facilitates optical studies.…”
Section: Introductionmentioning
confidence: 99%
“…In this work 10ϫ10ϫ1 mm 3 epipolished single crystals of MgO͑100͒ and MgO͑110͒ implanted with (1 ϫ10 16 )-cm Ϫ2 30-keV 6 Li ions and postannealed to 950 K for 30 min were used for the depth-selective positron experiments. The depth-selective 2D-ACAR measurements were carried out using an Anger-camera-type setup coupled with POSH, the high-intensity monoenergetic positron beam with a flux of 8ϫ10 7 e ϩ /s.…”
Section: Methodsmentioning
confidence: 99%
“…4,5 Nanoclusters embedded in inert matrices are usually produced by ion implantation and subsequent annealing. 6,7 Their size can be influenced by the selection of the type of matrix, the ion implantation fluence and energy, and the time and temperature of the annealing stage. Consequently, one can modify the electronic and optical properties of the matrix in which the nanoclusters are embedded.…”
Section: Introductionmentioning
confidence: 99%