Enabling wireless communication and networking technologies for the internet of things [Guest editorial]

Vinel, Alexey; Chen, Wen-Shyen Eric; Xiong, Neal N.; Rho, Seungmin; Chilamkurti, Naveen; Vasilakos, Athanasios V.

doi:10.1109/mwc.2016.7721735

Cited by 11 publications

(9 citation statements)

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“…[1][2][3] Over the last decade, gallium nitride (GaN) devices have been fundamental and essential elements to meet these requirements for high-power amplification of the radio frequency (RF) signal in MHz to GHz frequencies and beyond, especially for military applications. [1][2][3] Over the last decade, gallium nitride (GaN) devices have been fundamental and essential elements to meet these requirements for high-power amplification of the radio frequency (RF) signal in MHz to GHz frequencies and beyond, especially for military applications.…”

Section: Flexible Gallium Nitridementioning

confidence: 99%

“…[8] Further complicating the paradigm shift for 5G and new wireless capabilities, the reduction in signal propagation at higher frequencies will require an increase in the number of amplifiers needed for effective wireless infrastructure. [1][2][3] Over the last decade, gallium nitride (GaN) devices have been fundamental and essential elements to meet these requirements for high-power amplification of the radio frequency (RF) signal in MHz to GHz frequencies and beyond, especially for military applications. Allowing for the devices to accommodate strain is important in that it will ultimately reduce the 2D footprint of the device, enable wireless systems to be placed onto nonplanar platforms or surfaces, and improve overall mechanical reliability.…”

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confidence: 99%

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Flexible Gallium Nitride for High‐Performance, Strainable Radio‐Frequency Devices

et al. 2017

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Flexible gallium nitride (GaN) thin films can enable future strainable and conformal devices for transmission of radio-frequency (RF) signals over large distances for more efficient wireless communication. For the first time, strainable high-frequency RF GaN devices are demonstrated, whose exceptional performance is enabled by epitaxial growth on 2D boron nitride for chemical-free transfer to a soft, flexible substrate. The AlGaN/GaN heterostructures transferred to flexible substrates are uniaxially strained up to 0.85% and reveal near state-of-the-art values for electrical performance, with electron mobility exceeding 2000 cm V s and sheet carrier density above 1.07 × 10 cm . The influence of strain on the RF performance of flexible GaN high-electron-mobility transistor (HEMT) devices is evaluated, demonstrating cutoff frequencies and maximum oscillation frequencies greater than 42 and 74 GHz, respectively, at up to 0.43% strain, representing a significant advancement toward conformal, highly integrated electronic materials for RF applications.

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Section: Flexible Gallium Nitridementioning

confidence: 99%

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confidence: 99%

Flexible Gallium Nitride for High‐Performance, Strainable Radio‐Frequency Devices

et al. 2017

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“…Mechanically flexible electronic and photonic devices based on group-III-nitride (III-N) thin films have been developed for potential system applications of wireless communication, radars, flexible displays, electro-mechanical sensing, and energy harvesting. [1][2][3][4] Most of these studies focused on the mechanical bendability of the structure while minimizing the performance degradation of the devices, which is important in many applications. However, flexible devices made of III-N thin films have implications surpassing merely the ability to fabricate bendable devices.…”

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confidence: 99%

Modulation of the two-dimensional electron gas channel in flexible AlGaN/GaN high-electron-mobility transistors by mechanical bending

Wang

Chen

Lundh

et al. 2020

Applied Physics Letters

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We investigate the effect of strain on the two-dimensional electron gas (2DEG) channel in a flexible Al 0.25 Ga 0.75 N/GaN high-electron-mobility transistor (HEMT) by mechanical bending to prove the concept of active polarization engineering to create multifunctional electronic and photonic devices made of flexible group III-nitride thin films. The flexible HEMTs are fabricated by a layer-transfer process and integrated with a 150-lm-thick Cu film. The strain values are estimated from high-resolution x-ray diffraction and Raman spectroscopy in 4-cm bend-down and À4-cm bend-up test conditions. The strain-induced piezoelectric polarization can alter the charge density of the 2DEG in the channel at the AlGaN/GaN interface and thus modify the output characteristics of the flexible HEMTs. Accordingly, output characteristics show an increase in output current by 3.4% in the bend-down condition and a decrease by 4.3% in the bend-up condition. Transfer characteristics show a shift of threshold voltage, which also supports the 2DEG channel modulation during bending. Computational simulation based on the same structure confirms the same current modulation effect and threshold voltage shift. Furthermore, the electrical characteristics of the flexible HEMTs show a repeatable dependence on the strain effect, which offers potential for electro-mechanical device applications.

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“…The theoretical cost of our method is given by (6). The theoretical costs of GA and PSO are given by (4). The actual cost is to measure energy consumption through our system platform of the path generated by each method.…”

Section: Resultsmentioning

confidence: 99%

“…However, UAVs also exposed a lot of problems, the most important issue is the endurance of UAVs. Energy scheduling problem has always been a thorny issue in wireless network applications [2][3][4]; UAVs are the same. Due to the limited payload of UAVs, it is not possible to add more batteries to the UAVs.…”

Section: Introductionmentioning

confidence: 99%

A Heuristic Evolutionary Algorithm of UAV Path Planning

Xie

et al. 2018

Wireless Communications and Mobile Computing

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With the rapid development of the network and the informatization of society, how to improve the accuracy of information is an urgent problem to be solved. The existing method is to use an intelligent robot to carry sensors to collect data and transmit the data to the server in real time. Many intelligent robots have emerged in life; the UAV (unmanned aerial vehicle) is one of them. With the popularization of UAV applications, the security of UAV has also been exposed. In addition to some human factors, there is a major factor in the UAV’s endurance. UAVs will face a problem of short battery life when performing flying missions. In order to solve this problem, the existing method is to plan the path of UAV flight. In order to find the optimal path for a UAV flight, we propose three cost functions: path security cost, length cost, and smoothness cost. The path security cost is used to determine whether the path is feasible; the length cost and smoothness cost of the path directly affect the cost of the energy consumption of the UAV flight. We proposed a heuristic evolutionary algorithm that designed several evolutionary operations: substitution operations, crossover operations, mutation operations, length operations, and smoothness operations. Through these operations to enhance our build path effect. Under the analysis of experimental results, we proved that our solution is feasible.

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Enabling wireless communication and networking technologies for the internet of things [Guest editorial]

Cited by 11 publications

References 0 publications

Flexible Gallium Nitride for High‐Performance, Strainable Radio‐Frequency Devices

Flexible Gallium Nitride for High‐Performance, Strainable Radio‐Frequency Devices

Modulation of the two-dimensional electron gas channel in flexible AlGaN/GaN high-electron-mobility transistors by mechanical bending

A Heuristic Evolutionary Algorithm of UAV Path Planning

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