Enabling area-selective potential-energy engineering in InGaN/GaN quantum wells by post-growth intermixing

Shen, Chao; Ng, Tien Khee; Ooi, Boon S.

doi:10.1364/oe.23.007991

Cited by 16 publications

(14 citation statements)

References 33 publications

(35 reference statements)

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“…Lower implantation fluences or the use of swift heavy ions may be useful to keep implantation damage low. It was also reported recently that area-selective intermixing is possible by using metal/dielectric-coatings where metals such as Mo were shown to enhance interdiffusion during thermal annealing 49 .…”

Section: Discussionmentioning

confidence: 89%

Quantum well intermixing and radiation effects in InGaN/GaN multi quantum wells

Lorenz¹,

Redondo-Cubero²,

Lourenço³

et al. 2016

SPIE Proceedings

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Compositional grading of InGaN/GaN multi quantum wells (QWs) was proposed to mitigate polarization effects and Auger losses in InGaN-based light emitting diodes [K. P. O'Donnell et al., Phys. Status Solidi RRL 6 (2012) 49]. In this paper we are reviewing our recent attempts on achieving such gradient via quantum well intermixing. Annealing up to 1250 ºC resulted in negligible interdiffusion of QWs and barriers revealing a surprising thermal stability well above the typical MOCVD growth temperatures. For annealing at 1400 ºC results suggest a decomposition of the QWs in regions with high and low InN content. The defect formation upon nitrogen implantation was studied in detail. Despite strong dynamic annealing effects, which keep structural damage low, the created defects strongly quench the QW luminescence even for low implantation fluences. This degradation could not be reversed during thermal annealing and is hampering the use of implantation induced quantum well intermixing in InGaN/GaN structures.

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Section: Discussionmentioning

confidence: 89%

Quantum well intermixing and radiation effects in InGaN/GaN multi quantum wells

Lorenz¹,

Redondo-Cubero²,

Lourenço³

et al. 2016

SPIE Proceedings

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“…The development of InGaN/GaN quantum well (QW) based violet-blue-green light-emitting diodes (LEDs) [1][2][3][4][5][6] and laser diodes (LDs) [7][8][9][10] enables efficient solid-state lighting (SSL) technology for a wider range of applications, such as general illumination, automotive lighting, display and horticulture [11,12]. Besides, the utilization of III-nitride LEDs and LDs as the transmitter for free-space visible light communications (VLC) and underwater wireless optical communications (UWOC) has been demonstrated and investigated recently [13][14][15][16].…”

Section: Introductionmentioning

confidence: 99%

“…For example, InGaN/GaN QW LEDs suffers from the "efficiency droop" effect, resulting in a rapidly reduced efficiency at high current injections [4,5]. Also, a relatively small modulation bandwidth of LEDs limits the data communication rate in LED-based VLC links.…”

Section: Introductionmentioning

confidence: 99%

Semipolar InGaN-based superluminescent diodes for solid-state lighting and visible light communications

Shen

Lee

et al. 2017

SPIE Proceedings

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III-nitride light emitters, such as light-emitting diodes (LEDs) and laser diodes (LDs), have been demonstrated and studied for solid-state lighting (SSL) and visible-light communication (VLC) applications. However, for III-nitride LEDbased SSL-VLC system, its efficiency is limited by the "efficiency droop" effect and the high-speed performance is limited by a relatively small -3 dB modulation bandwidth (<100 MHz). InGaN-based LDs were recently studied as a droop-free, high-speed emitter; yet it is associated with speckle-noise and safety concerns. In this paper, we presented the semipolar InGaN-based violet-blue emitting superluminescent diodes (SLDs) as a high-brightness and high-speed light source, combining the advantages of LEDs and LDs. Utilizing the integrated passive absorber configuration, an InGaN/GaN quantum well (QW) based SLD was fabricated on semipolar GaN substrate. Using SLD to excite a YAG:Ce phosphor, white light can be generated, exhibiting a color rendering index of 68.9 and a color temperature of 4340 K. Besides, the opto-electrical properties of the SLD, the emission pattern of the phosphor-converted white light, and the high-speed (Gb/s) visible light communication link using SLD as the transmitter have been presented and discussed in this paper.

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“…The advances of III-nitride photonic integration, and the application of YAG crystal and perovskite-based phosphors to lighting and VLC will be discussed. OCIS codes: (060.2605) Free-space optical communication; (140.7300) Visible lasers; (230.3670) Light-emitting diodes; (230.5590) Quantum-well, -wire and -dot devices; (250.0250) Optoelectronics; (250.5960) Semiconductor lasers.The past decade witnessed the rapid development of III-nitride light-emitting diodes (LEDs) [1,2], superluminescent diodes (SLDs) [3,4], and laser diodes (LDs) [5,6], for solid-state lighting (SSL), visible-light communication (VLC), optical storage, and internet-of-things (IoT) [7,8]. InGaN/GaN quantum well (QW)-based LEDs have been established as the fundamental component for SSL applications while recent studies suggested that the GaN-based LDs, which is free from efficiency droop, may outperform LEDs as a viable high-power light source [9,10].…”

mentioning

confidence: 99%

Visible Lasers and Emerging Color Converters for Lighting and Visible Light Communications

Shen

2017

Light, Energy and the Environment

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GaN-based lasers are promising for white lighting and visible-light communication (VLC). The advances of III-nitride photonic integration, and the application of YAG crystal and perovskite-based phosphors to lighting and VLC will be discussed. OCIS codes: (060.2605) Free-space optical communication; (140.7300) Visible lasers; (230.3670) Light-emitting diodes; (230.5590) Quantum-well, -wire and -dot devices; (250.0250) Optoelectronics; (250.5960) Semiconductor lasers.The past decade witnessed the rapid development of III-nitride light-emitting diodes (LEDs) [1,2], superluminescent diodes (SLDs) [3,4], and laser diodes (LDs) [5,6], for solid-state lighting (SSL), visible-light communication (VLC), optical storage, and internet-of-things (IoT) [7,8]. InGaN/GaN quantum well (QW)-based LEDs have been established as the fundamental component for SSL applications while recent studies suggested that the GaN-based LDs, which is free from efficiency droop, may outperform LEDs as a viable high-power light source [9,10]. Meanwhile, there are increasing potentials in using such emitters in visible-light based optical communication systems for indoor and outdoor applications as data-rate demands are exponentially growing in the near future [8,11,12]. Since LDs exhibit significantly larger modulation bandwidth than LEDs, VLC links based on GaN lasers have shown multiple gigabit per second (Gbps) data rate, suggesting its growing potential for SSL-VLC dual-functionality applications [12,13]. The development of devices and components in laser-based white lighting and data communication systems will be discussed.Similar to the structure in white LEDs, laser white light bulb can be constructed by employing a blue laser exciting yellow phosphor as the color converter. A correlated color temperature (CCT) of ~ 4000 K and a color rendering index (CRI) of ~ 57 has been achieved using a 450-nm emitting LD and YAG:Ce phosphor [13,14]. The CRI and CCT can be further improved or engineered by using combinations of violet-blue LDs with a mixture of two or more color converters. For example, a CCT of ~ 2700 K and a CRI of > 90 has been reported using a violet LD exciting a mixture of red-, green-, and blue-emitting (RGB) phosphors [14]. By using a blue LD with novel CsPbBr3 perovskite nanocrystals (NCs) with conventional red phosphor as the color converter, a CRI of ~ 89 and a CCT of ~ 3200 K has been achieved [15]. Apart from the white light characteristics including CRI and CCT, the conversion efficiency and stability of color converters are of particular interest due to a significantly higher excitation power density in LD based white lighting [16]. Hence, the utilization of YAG:Ce single crystal phosphor plate has been investigated for high power laser based SSL lamp reaching a peak luminous flux of 1100 lm [17]. Ceramic YAG:Ce yellow phosphor plates have also been developed for efficient white light conversion under high power blue radiant flux density of 19.1 W/mm 2 [18]. The YAG crystal and perovskite-based phosphors offer new opportu...

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Enabling area-selective potential-energy engineering in InGaN/GaN quantum wells by post-growth intermixing

Cited by 16 publications

References 33 publications

Quantum well intermixing and radiation effects in InGaN/GaN multi quantum wells

Quantum well intermixing and radiation effects in InGaN/GaN multi quantum wells

Semipolar InGaN-based superluminescent diodes for solid-state lighting and visible light communications

Visible Lasers and Emerging Color Converters for Lighting and Visible Light Communications

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