2017
DOI: 10.1109/led.2017.2722463
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Emulating Short-Term and Long-Term Plasticity of Bio-Synapse Based on Cu/a-Si/Pt Memristor

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Cited by 145 publications
(110 citation statements)
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“…The difference is that the semiconducting or insulating switching layer does not contain movable metal ions or metal clusters; movable metal ions come from the redox reaction at the active electrode/switching layer interface upon electrical bias. The active electrode material is always Cu or Ag, and the switching layer can be Ta 2 O 5 , ZnO, HfO 2 , WO 3− x , ZnS, GeSe, SiGe, amorphous silicon, amorphous carbon, polymer, and silk fibroin . It has been found that lightly oxidized ZnS films present highly controllable memristive switching and synaptic performance, originating from a two‐layer structure of ZnS thin films, i.e., the lightly oxidized layer and unoxidized layer .…”
Section: Working Mechanisms Of Memristive Synapsesmentioning
confidence: 99%
“…The difference is that the semiconducting or insulating switching layer does not contain movable metal ions or metal clusters; movable metal ions come from the redox reaction at the active electrode/switching layer interface upon electrical bias. The active electrode material is always Cu or Ag, and the switching layer can be Ta 2 O 5 , ZnO, HfO 2 , WO 3− x , ZnS, GeSe, SiGe, amorphous silicon, amorphous carbon, polymer, and silk fibroin . It has been found that lightly oxidized ZnS films present highly controllable memristive switching and synaptic performance, originating from a two‐layer structure of ZnS thin films, i.e., the lightly oxidized layer and unoxidized layer .…”
Section: Working Mechanisms Of Memristive Synapsesmentioning
confidence: 99%
“…Similar to the working mechanism of a memristor, the synaptic weight or conductance of the synaptic device varies by the active metal (Ag, Cu, W, etc.) ion migration upon external electrical stimuli, realizing synaptic behaviors, such as potentiation, depression, and STDP . Moreover, the crossbar structure of memristors lends this type of synaptic device promise for high‐density integration.…”
Section: Materials and Heterostructure‐based Synaptic Devicesmentioning
confidence: 99%
“…Various synaptic devices based on resistive switching, driven by different physical working mechanisms such as active metallic filament, charge trapping/detrapping effect, ions/vacancies migration, phase change behaviors, ferroelectric polarization, and spin‐transfer torque‐based synapses, have been demonstrated for emerging memory and neuromorphic computing. Many scientists are actively working to resolve various issues in those synaptic devices: high energy consumption, low switching speed, poor reliability, or the lack of high device density for integration.…”
Section: Introductionmentioning
confidence: 99%
“…Since Jo et al [20] reported artificial synaptic behaviors, such as long-term potentiation/depression (LTP/LTD), in a Si/Ag-based memristor device in 2010, two-terminal memristive devices, such as phase-change random-access memory (PCRAM), [16,21,22] resistive-switching random-access memory (ReRAM), [23][24][25] and conductive bridge random-access memory (CBRAM) devices [26,27] have been studied actively as promising synaptic and neural devices for HNNs. Such devices could gradually change the conductance of the path of current according to input voltage pulses, [16,[21][22][23][24][25][26][27] thereby allowing for the implementation of the functional operation of a synapse within a unit device.…”
mentioning
confidence: 99%
“…[21][22][23][24][25][26][27][28] The extraordinary LTP/LTD profiles with opposite nonlinearity values (negative α p and positive α d ) can be explained by the harsh Cu 2+ diffusion condition in the S-DNA electrolyte owing to the relatively lower number of defective sites. After fitting the data, we confirmed a special potentiation characteristic with a negative nonlinearity value in the S-DNA device.…”
mentioning
confidence: 99%