Empirical relationship between the low-frequency noise spectral density and the transconductance of silicon-on-insulator n-channel metal-oxide-semiconductor transistors

Abstract

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Empirical model for the low-frequency noise of hot-carrier degraded submicron LDD MOSFETs

“…It has been suggested previously that there exists a unique empirical relationship between the LF noise and the transconductance of Silicon-on-Insulator MOSFET's [13]- [14]. This is also suggested here by the results shown in Fig.…”

“…2 is obtained, where the average input-referred voltage noise spectral density at 1 Hz is plotted versus the reciprocal transconductance, for the L 0.7 m n-MOSFET's in linear operation. Based on the impact of interface and oxide charge on the mobility and the noise, respectively, this is physically more relevant, than plotting versus , as has been done previously [13], [14]. A clear exponential dependence is obvious in the figure, which can be represented by Hz exp (1) whereby and are empirical factors.…”