Empirical Model for the Effective Electron Mobility in Silicon Nanowires

Granzner, Ralf; Polyakov, V. M.; Schippel, Christian; Schwierz, Frank

doi:10.1109/ted.2014.2354254

Cited by 16 publications

(13 citation statements)

References 51 publications

(53 reference statements)

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“…The dependence of the phonon limited mobility on the SiNW cross-section is modeled by the function (2) where the cross-section area A is normalized by 1 nm 2 and a= 45 cm 2 /Vs, jJ= 1.15 and f/max = 1100 cm 2 /Vs are the fit parameters [9]. For the mobility limited by surface roughness scattering, we suggest the expression…”

Section: Introductionmentioning

confidence: 99%

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Electron mobility in silicon nanowire mosfets

Granzner

Schwierz

2014

2014 12th IEEE International Conference on Solid-State and Integrated Circuit Technology (ICSICT)

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An empirical model for the effective electron mobility in silicon nanowires (SiNWs) is presented that can be used for modeling and simulation purposes as well as for benchmarking SiNW technologies. The model is implemented into a commercial device simulator which is used to estimate the scaling trends of SiNW MOSFETs.The simulations predict a performance improvement down to a gate length of about 7nm. For smaller devices, no further benefit is expected due to the low electron mobility in SiNWs with diameters under 3nm.

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Section: Introductionmentioning

confidence: 99%

“…To describe such a structure, an effective diameter is to be chosen. For this purpose we suggest a function of the form the chosen parameters can be found in [9]. Nevertheless, Fig.…”

Section: Introductionmentioning

confidence: 99%

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Electron mobility in silicon nanowire mosfets

Granzner

Schwierz

2014

2014 12th IEEE International Conference on Solid-State and Integrated Circuit Technology (ICSICT)

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confidence: 99%

“…However, the operation of Si-MOSFET with an atomic scale thickness is not realistic because the mobility is drastically reduced because of fabrication damage. 5,6 The advantage of 2D materials is their intrinsic atomic thickness, 7,8 which allows both the reduction of the short channel effect and the possible retention of high mobility. For the short channel devices in which quasiballistic transport is assumed, the on-current can be determined not by the mobility but by the effective mass.…”

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confidence: 99%

Graphene field-effect transistor application-electric band structure of graphene in transistor structure extracted from quantum capacitance

Nagashio

2016

J. Mater. Res.

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Recently, various two-dimensional (2D) materials, such as graphene, transition metal dichalcogenides and so on, have attracted much attention in electron device research. The most important characteristic of graphene is its highest mobility of all semiconductor channels at room temperature. However, it is obvious that more than a good mobility characteristic is required to realize the field effect transistor (FET), and intense arguments from various points of view are necessary. In this paper, the issues with Si-metal oxide semiconductor FETs (Si-MOSFET) and the advantage of 2D materials are discussed. The present state of graphene FETs with respect to gate stack formation and band gap engineering is reported. Moreover, based on the density of states (DOS) of graphene extracted using the quantum capacitance (C Q ) measurement, it is shown that the electric band structure of graphene in contact with gate insulators or metal electrode deviates from its intrinsic band structure. I. ISSUES WITH Si-MOSFET AND THE ADVANTAGE OF 2D CHANNELSThe issues with the miniaturization of Si-MOSFETs are generically called short channel effects.1 When the source and drain depletion regions become comparable in length with the channel length, as shown in Fig. 1(a), the drain bias weakens the gate bias, which leads to a drastic increase in the off-current. Based on an analysis of the distribution of the electrical potential in the channel region, it is widely known that the short channel effect can be neglected when the channel length is ;6 times longer than the scaling length, k ¼ ffiffiffiffiffiffiffiffiffiffiffiffiffiffiffiffiffiffiffiffiffiffiffiffiffiffiffiffiffiffiffiffiffiffi ffi e ch t ch t ox ð Þ = Ne ox ð Þ p , 2,3 where e ch , e ox , t ch , and t ox are the dielectric constants for the channel, the gate insulator, the thickness of the channel, and the gate oxide, respectively. Figure 1(b) shows the 6k values calculated for Si, carbon nanotubes (CNT), bilayer graphene, and MoS 2 , where the contribution of the tunneling effect is neglected. N is defined as the effective gate number: N 5 1 for planar, N 5 2 for dual gate, N 5 3 for FIN-FET, and N 5 4 for gate-all-around. Although the FIN structure has already been adopted for Si to reduce the short channel effects, 4 it is difficult to avoid the short channel effects for channel lengths shorter than 10 nm. 2D layered channels in FET applications are attractive because of their rigidly controllable atomic thickness (t ch , 1 nm) and their low dielectric constants where e ch 5 ;4 for a typical 2D layered channel. 3,4 This results in a 6k smaller than that of Si. Of course, Si channels of a few nanometers thick have already been constructed using the microfabrication process. However, the operation of Si-MOSFET with an atomic scale thickness is not realistic because the mobility is drastically reduced because of fabrication damage. 5,6 The advantage of 2D materials is their intrinsic atomic thickness, 7,8 which allows both the reduction of the short channel effect and

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Graphene Nanoribbons for Electronic Devices

et al. 2017

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Graphene nanoribbons show unique properties and have attracted a lot of attention in the recent past. Intensive theoretical and experimental studies on such nanostructures at both the fundamental and application-oriented levels have been performed. The present paper discusses the suitability of graphene nanoribbons devices for nanoelectronics and focuses on three specific device types -graphene nanoribbon MOSFETs, side-gate transistors, and three terminal junctions. It is shown that, on the one hand, experimental devices of each type of the three nanoribbon-based structures have been reported, that promising performance of these devices has been demonstrated and/or predicted, and that in part they possess functionalities not attainable with conventional semiconductor devices. On the other hand, it is emphasized that -in spite of the remarkable progress achieved during the past 10 yearsgraphene nanoribbon devices still face a lot of problems and that their prospects for future applications remain unclear.

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Empirical Model for the Effective Electron Mobility in Silicon Nanowires

Cited by 16 publications

References 51 publications

Electron mobility in silicon nanowire mosfets

Electron mobility in silicon nanowire mosfets

Graphene field-effect transistor application-electric band structure of graphene in transistor structure extracted from quantum capacitance

Graphene Nanoribbons for Electronic Devices

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