EML Based on Lumped Configuration, Identical Epitaxial Layer and HSQ Planarization

Abstract

We present a new electroabsorption modulated laser based on a lumped configuration, identical epitaxial layer scheme, and a new low-permittivity planarization method. The design of the device is intended to offer a high modulation frequency using a simple and cheap fabrication process. A thick-film of HSQ spinon coating was used to planarize the device and enable a low capacitance contact to the p-side. A 6-µm-thick planarized HSQ layer was fabricated and used to implement the electrode to the electroabsorption modulator.

EML Based on Identical Epitaxial Layer, Side-Wall Grating and HSQ Planarization

“…The material used in this work is a p-i-n diode structure grown based on the AlGaInAs/InP material system, with an epitaxial layer structure described in [13], [14], [15]. The intrinsic region consists of five 6-nm-thick AlGaInAs QWs sandwiched by six 10-nm-thick AlGaInAs quantum barriers.…”

Electroabsorption Modulated Laser Based on Identical Epitaxial Layer and Transmission Line Technology

“…Here, for the first time, we present a new approach for fabricating an EML based on the identical epitaxial layer scheme. The structure is a p-i-n separate confinement heterostructure grown in the AlGaInAs/InP system with an epitaxial structure described in [3]. The EML was initially integrated using a single 2.5-µm-wide common ridge with a 30 µm isolation section to separate the DFB and EAM electrically.…”