Emissive displays with transfer-printed assemblies of 8  μm × 15  μm inorganic light-emitting diodes

Bower, Christopher A.; Meitl, Matthew A.; Raymond, Brook; Radauscher, Erich; Cok, Ronald S.; Bonafede, Salvatore; Gómez, David; Moore, Tanya; Prevatte, Carl; Fisher, Brent; Rotzoll, Robert; Melnik, George; Fecioru, Alin; Trindade, António Jośe

doi:10.1364/prj.5.000a23

Cited by 114 publications

(85 citation statements)

References 16 publications

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“…There exists many different ways to combine the AlGaInP and InGaN subpixels (see for instance refs. ). However, for an ultra‐high resolution display, the large amount of subpixels to order together (typically 10 s of millions) make the process fastidious and challenging.…”

Section: Introductionmentioning

confidence: 97%

Simultaneous Growth of Various InGaN/GaN Core‐Shell Microstructures for Color Tunable Device Applications

Robin

Liao

Pristovsek

et al. 2018

Physica Status Solidi (a)

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An approach to simultaneously grow independent core‐shell structures emitting at different wavelengths by selective area epitaxy is presented. By using seeds of different sizes, the monolithic integration of various GaN crystals including elongated nano‐rods (NRs), micro‐platelets (MPs), and a range of pyramid‐like structures are demonstrated. Dominant non‐polar sidewalls cover more than 75% of the surface area of the NRs, while the polar top facet are about 80% of the total surface of the MPs. InGaN/GaN quantum wells (QWs) deposited on these structures exhibit independent and well‐separated emissions in the green–blue and orange–red ranges, respectively. The pyramid‐like structures at intermediate seed sizes are more complex with semi‐polar facets nearly totaling 60% of the total surface area, resulting in yellow luminescence strongly broadened by the nearby facets contributions. These results suggest the total surface area of each facets and the resulting optical properties of the crystals can be tailored by adjusting the size of the seeds. However, further improvements are required to locally enhance the vertical, pyramidal, and lateral growth of the GaN cores and increase the spectral purity of the different QWs. The approach presented is of interest to design multi‐wavelength devices which requires independent subpixels of high color purity.

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Section: Introductionmentioning

confidence: 97%

Simultaneous Growth of Various InGaN/GaN Core‐Shell Microstructures for Color Tunable Device Applications

Robin

Liao

Pristovsek

et al. 2018

Physica Status Solidi (a)

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“…When the Pick-up/release process is based on Van-der-Waals forces, the transfer steps only serves for achieving the mechanical contact with the receiver substrate [5]. The electrical contact is made in subsequent steps, by depositing and patterning metal lines [5].…”

Section: Fabrication Approach and Challengesmentioning

confidence: 99%

Mini-LED and Micro-LED: Promising Candidates for the Next Generation Display Technology

et al. 2018

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We discuss the main challenges for the fabrication of emerging microLED displays. We shown that microtube technology is very well adapted to these new kind of displays, since it provides both mechanical and electrical connection of the microLEDs on the receiving substrate. Also, we present a new fabrication approach, where an elementary unit consists of all-in-one-RBG MicroLEDs on CMOS driving circuit.

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“…For example, it is challenging to create an array of pixels comprised of the three (or more) primary colors, because inorganic LEDs are typically grown and fabricated in wafer form. Therefore, the different colors are obtained by separate growth and processing runs, and the LEDs need to be transferred to create the display . Also the smaller die size, compared to traditional LEDs (>300 µm × 300 µm), further complicates constructing the LED array …”

Section: Introductionmentioning

confidence: 99%

III‐Nitride Micro‐LEDs for Efficient Emissive Displays

Wierer

Tansu

2019

Laser & Photonics Reviews

104

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Emissive displays based on light‐emitting diodes (LEDs), with high pixel density, luminance, efficiency, and large color gamut, are of great interest for applications such as watches, phones, and virtual displays. The high pixel density requirements of some emissive displays require a particular class of LEDs that are sub‐20‐micrometers in length, called micro‐LEDs. While state‐of‐the‐art emissive displays incorporate organic LEDs, an alternative is inorganic III‐nitride LEDs with potential reliability and efficiency benefits. Here we explore the performance, challenges, and prospective outcomes for III‐nitride micro‐LEDs to produce efficient emissive displays and provide insight to advance this technology. Calculations are performed to determine the operating points for the micro‐LEDs and the efficiency of the overall emissive display. It is shown that III‐nitride micro‐LEDs suffer from some of the same problems as their larger‐sized solid‐state lighting LED cousins; however, the operating conditions of micro‐LEDs can result in different challenges and research efforts. These challenges include improving efficiency at low current densities; improving the efficiency of longer wavelength (green and red) LEDs; and creating device designs that can overcome low coupling efficiency, high surface recombination, and display assembly difficulties.

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Emissive displays with transfer-printed assemblies of 8 μm × 15 μm inorganic light-emitting diodes

Cited by 114 publications

References 16 publications

Simultaneous Growth of Various InGaN/GaN Core‐Shell Microstructures for Color Tunable Device Applications

Simultaneous Growth of Various InGaN/GaN Core‐Shell Microstructures for Color Tunable Device Applications

Mini-LED and Micro-LED: Promising Candidates for the Next Generation Display Technology

III‐Nitride Micro‐LEDs for Efficient Emissive Displays

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