Emission Due to Exciton Scattering by LO-Phonons in Gallium Nitride

Wojdak, M.; Wysmołek, A.; Pakuła, K.; Baranowski, J. M.

doi:10.1002/(sici)1521-3951(199911)216:1<95::aid-pssb95>3.0.co;2-r

Cited by 10 publications

(5 citation statements)

References 4 publications

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“…The line shape of phonon replicas shows some departure from equation (13), possibly due to the scattering by point defects [49]. The temperature dependent line shape and line width of LO phonon replicas, and the temperature dependent intensity ratio of the 1LO to 2LO replica in a high quality GaN sample agree well with the three predictions [45][46][47].…”

Section: Lo Phonon Replicasupporting

confidence: 60%

“…Since the kinetic energy of the exciton increases with the temperature, an increase in intensity ratio I nLO /I 0 with the temperature would be expected. Various values of S factor reported by different authors might be due to the temperature effect [45][46][47][48]. With an increase in temperature, the linewidths of A-LO replicas become broader.…”

Section: Lo Phonon Replicamentioning

confidence: 93%

“…The LO phonon replicas of free and bound excitons in GaN were observed 30 years ago [38], but it was only recently, with the breakthrough in the growth methods and the improvement in the quality of GaN material, that the LO phonon replicas in GaN could be systematically studied. The study of the LO phonon replica in GaN showed that the physics of the phonon replica, obtained mostly in II-VI semiconductors, works well when applied to nitride semiconductors [39][40][41][42][43][45][46][47][48]. Figure 1 shows a typical temperature dependent PL study of an undoped GaN sample [39,40].…”

Section: Lo Phonon Replicamentioning

confidence: 99%

See 2 more Smart Citations

Influence of electron-phonon interaction on the optical properties of III nitride semiconductors

Zhang

Taliercio

Kolliakos

et al. 2001

J. Phys.: Condens. Matter

161

173

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The electronic band structures of III nitride semiconductors calculated within the adiabatic approximation give essential information about the optical properties of materials. However, atoms of the lattice are not at rest; their displacement away from the equilibrium positions perturbs the periodic potential acting on the electrons in the crystal, leading to an electron-phonon interaction energy. Due to different ways that the lattice vibration perturbs the motions of electrons, there are various types of interaction, such as Fröhlich interaction with longitudinal optical phonons, deformation-potential interactions with optical and acoustic phonons and piezoelectric interaction with acoustic phonons. These interactions, especially the Fröhlich interaction, which is very strong due to the ionic nature of III nitrides, have a great influence on the optical properties of the III nitride semiconductors. As a result of electron-phonon interaction, several phenomena, such as phonon replicas in the emission spectra, homogeneous broadening of the excitonic line width and the relaxation of hot carriers to the fundamental band edge, which have been observed in GaN and its low dimensional heterostructures, are reviewed.

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Section: Lo Phonon Replicasupporting

confidence: 60%

Section: Lo Phonon Replicamentioning

confidence: 93%

Section: Lo Phonon Replicamentioning

confidence: 99%

See 1 more Smart Citation

Influence of electron-phonon interaction on the optical properties of III nitride semiconductors

Zhang

Taliercio

Kolliakos

et al. 2001

J. Phys.: Condens. Matter

161

173

View full text Add to dashboard Cite

show abstract

“…Detailed investigations have been already reported concerning the phonon-induced thermal broadening of the excitonic lines and the main characteristics of the phonon-assisted emission. 15 Until now, experimental studies dealing with the spectral shift, [16][17][18][19][20] intensity, [21][22][23] and lineshape 12,17,19,20,[22][23][24][25] of PR emission with temperature ͑T͒ have been performed in a restricted T range ͑T Ͻ 100 K͒ and subsequent modeling of the data systematically neglected the B exciton contribution. A careful analysis of the reported data, mainly those measured at higher T concerning the PR spectral shift 16,20 and lineshape, 16,17,19,20,23,25 evidences only a poor agreement with the model predictions.…”

Section: Introductionmentioning

confidence: 99%

Probing exciton density of states through phonon-assisted emission in GaN epilayers:AandBexciton contributions

et al. 2010

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A detailed experimental investigation of the phonon-assisted emission in a high-quality c-plane GaN epilayer is presented up to 200 K. By performing photoluminescence and reflectivity measurements, we find important etaloning effects in the phonon-replica spectra, which have to be corrected before addressing the lineshape analysis. Direct experimental evidence for free exciton thermalization is found for the whole temperature range investigated. A close comparison with existing models for phonon replicas originating from a thermalized free exciton distribution shows that the simplified and commonly adopted description of the exciton-phonon interaction with a single excitonic band leads to a large discrepancy with experimental data. Only the consideration of the complex nature of the excitonic band in GaN, including A and B exciton contributions, allows accounting for the temperature dependence of the peak energy, intensity, and lineshape of the phonon replicas.

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“…While the phonon-assisted emissions in GaN have been widely studied in the past years [2][3][4][5], very scarce information is available on the exciton-phonon interaction in III-nitride quantum structures. A strong phonon-assisted emission has been observed in lowtemperature PL spectra of GaN/AlGaN quantum wells (QWs) [6] and InGaN/GaN QWs [7][8][9].…”

mentioning

confidence: 99%

Phonon-Assisted Photoluminescence in InGaN/GaN Multiple Quantum Wells

Paskov

Holtz

Ḿonemar

et al. 2002

phys. stat. sol. (b)

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PACS: 63.20.Kr; 78.55.Cr; 78.67.De The LO-phonon sidebands of the photoluminescence in InGaN/GaN multiple quantum wells has been investigated in the temperature range from 20 to 300 K. Analysing the intensity distribution among the phonon replicas, the strength of the exciton-phonon interaction has been estimated. The Huang-Rhys factor was found to be %0.3, much larger than in GaN. The enhancement has been attributed to the exciton localization on a length scale smaller than the exciton Bohr radius and to the large internal electric field, which increases the spatial separation of the electron and hole charge densities along the growth axis.Introduction The interaction of carriers with phonons is known to strongly affect the optical and electrical properties of semiconductors. Scattering with phonons governs the thermal broadening of emission lines, the hot-carrier relaxation as well as the carrier mobility. Among all types of electron-phonon interactions, the Frö hlich interaction, which arises from the Coulomb interaction between carriers and the electric field produced by the longitudinal optical (LO) phonons, is a dominant one in III-nitride semiconductors due to the ionic character of the chemical bonds [1]. The strong exciton-LO-phonon coupling is manifested by the appearance of phonon-assisted emissions in the photoluminescence (PL) spectra. The intensity distribution of these phonon replicas is usually described in terms of the Huang-Rhys factor S, which accounts for the strength of the coupling.While the phonon-assisted emissions in GaN have been widely studied in the past years [2-5], very scarce information is available on the exciton-phonon interaction in III-nitride quantum structures. A strong phonon-assisted emission has been observed in lowtemperature PL spectra of GaN/AlGaN quantum wells (QWs) [6] and . In all cases, a S factor much larger than that in the bulk GaN has been obtained. The enhancement of the coupling has been attributed to the strong localization of the excitons in In-rich regions [8] or to the large build-in electric field, which tends to create separately localized electrons and holes at opposite sides of the wells [9]. Here, we report on the LO-phonon assisted photoluminescence in InGaN/GaN multiple quantum wells (MQWs) grown by metalorganic vapour phase epitaxy (MOVPE) and optimised to give a high uniformity of the average In composition.

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Emission Due to Exciton Scattering by LO-Phonons in Gallium Nitride

Cited by 10 publications

References 4 publications

Influence of electron-phonon interaction on the optical properties of III nitride semiconductors

Influence of electron-phonon interaction on the optical properties of III nitride semiconductors

Probing exciton density of states through phonon-assisted emission in GaN epilayers:AandBexciton contributions

Phonon-Assisted Photoluminescence in InGaN/GaN Multiple Quantum Wells

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