Emission and microstructural behaviors in the InGaN/GaN MQWs with the p-GaN layers grown at different growth temperatures

Kong, Bo Hyun; Han, Won Suk; Cho, Hyung Koun; Kim, Mi Yang; Choi, R. J.; Kim, Bae Kyun

doi:10.1016/j.jcrysgro.2008.07.070

Cited by 10 publications

(3 citation statements)

References 16 publications

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“…8, a sharp and strong band edge emission is observed at 445 nm with a FWHM of 24.0 nm, indicating that high-quality GaN-based LED wafer is achieved on LSAT substrate using low-temperature RF-MBE working at high RF power which ensures the generation of high energetic N and hence the GaN nucleation at relatively low temperature. [47][48][49] From the PL peak location we can also deduce that the content of In in MQWs is about 0.13, which is consistent with our XRD measurement. 50 The EL measurement for the as-grown LED was also conducted at room temperature.…”

Section: Journal Of Materials Chemistry C Papersupporting

confidence: 86%

Growth and characterization of GaN-based LED wafers on La0.3Sr1.7AlTaO6 substrates

Wang

Yang

2013

J. Mater. Chem. C

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High-quality GaN-based light emitting diode (LED) wafers on La 0.3 Sr 1.7 AlTaO 6 (LSAT) (111) substrates have been demonstrated by molecular beam epitaxy (MBE) for the first time. The structural properties and optoelectronic properties of as-grown LED wafers have been characterized by high-resolution X-ray diffraction (HRXRD), high-resolution transmission electron microscopy (HRTEM), scanning electron microscopy (SEM), atomic force microscopy (AFM), photoluminescence (PL), and electroluminescence (EL).The small full-width at half-maximum (FWHM) values for both symmetric (0002) and asymmetric (10 12)HRXRD rocking curves indicate that LED wafers on LSAT (111) substrates are of high crystalline quality, the clear and pronounced Pendellösung fringes of XRD from as-grown multiple quantum wells (MQWs)suggest abrupt InGaN/GaN interfaces with designed layer periodicity and the well controlled composition and thickness of each barrier and well layer with the MQWs, which has also been confirmed by HRTEM characterization. The XRD reciprocal space map (RSM) of the (10 15) plane was used to further study the stress state in GaN-based LED wafers. AFM reveals high quality surface morphology for the GaN-based LED wafers on LSAT substrates, with a root-mean-square (RMS) roughness of 1.6 nm. The PL spectrum shows the band edge emission at 445 nm with a FWHM of 24.0 nm. The EL edge emission is observed at 448 nm with a FWHM of 22.6 nm at an injection current of 20 mA, with the light output power of 4.3 mW and the forward voltage of 3.18 V for the chip size of 300 Â 300 mm 2 , indicating good optoelectronic properties of as-grown GaN-based LEDs on LSAT substrates. This achievement reveals the tremendous potential of GaN-based LEDs on LSAT (111) for optoelectronic device applications.

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Section: Journal Of Materials Chemistry C Papersupporting

confidence: 86%

Growth and characterization of GaN-based LED wafers on La0.3Sr1.7AlTaO6 substrates

Wang

Yang

2013

J. Mater. Chem. C

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“…1,2) In particular, one-dimensional (1D) GaN at the nanometer scale is an attractive material because of its high quantum efficiency, increased optical gain, and reduced dislocation density compared with thin-film GaN. [3][4][5] However, owing to a lack of suitable substrates, most GaN devices are made from multiple epitaxial layers grown on Al 2 O 3 . 6,7) However, Al 2 O 3 is expensive and difficult to process for device fabrication.…”

Section: Introductionmentioning

confidence: 99%

Crystal Orientation of GaN Nanostructures Grown on Al₂O₃ and Si(111) with a Zr Buffer Layer

Kim

Shin

Jeon

et al. 2012

Jpn. J. Appl. Phys.

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We studied the crystallographic orientation of GaN nanostructures grown on Si(111) and Al 2 O 3 substrates. We evaluated Zr metal as a novel alternative to conventional buffer layers such as AlN and ZnO. One-dimensional structures (nanorods and nanoneedles) were grown by hydride vapor phase epitaxy at 650 and 600 C, and investigated using field-emission scanning electron microscopy (FE-SEM) and X-ray diffraction (XRD) analysis. FE-SEM images showed that the GaN nanorods had a uniform diameter along the growth direction. XRD results indicated that the nanostructures had a hexagonal crystal structure, and pole figure measurements revealed that GaN nanostructures grown on the Si (111) substrate had a stronger c-axis crystallographic orientation than those grown on the Al 2 O 3 substrate.

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“…We attribute the lower forward voltage of the LED chip grown on LiGaO 2 (100) substrate to the lower series resistance in the LED chip on the LiGaO 2 (100) substrate of $7 U compared with that on the c-plane sapphire substrate of $10 U. 4,[37][38][39][40][41][42] Furthermore, the EQE for LED chips on LiGaO 2 (100) and c-plane sapphire substrates were also studied. Fig.…”

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confidence: 99%

A new system for achieving high-quality nonpolar m-plane GaN-based light-emitting diode wafers

et al. 2014

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Emission and microstructural behaviors in the InGaN/GaN MQWs with the p-GaN layers grown at different growth temperatures

Cited by 10 publications

References 16 publications

Growth and characterization of GaN-based LED wafers on La0.3Sr1.7AlTaO6 substrates

Growth and characterization of GaN-based LED wafers on La0.3Sr1.7AlTaO6 substrates

Crystal Orientation of GaN Nanostructures Grown on Al₂O₃ and Si(111) with a Zr Buffer Layer

A new system for achieving high-quality nonpolar m-plane GaN-based light-emitting diode wafers

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Emission and microstructural behaviors in the InGaN/GaN MQWs with the p-GaN layers grown at different growth temperatures

Cited by 10 publications

References 16 publications

Growth and characterization of GaN-based LED wafers on La0.3Sr1.7AlTaO6 substrates

Growth and characterization of GaN-based LED wafers on La0.3Sr1.7AlTaO6 substrates

Crystal Orientation of GaN Nanostructures Grown on Al2O3 and Si(111) with a Zr Buffer Layer

A new system for achieving high-quality nonpolar m-plane GaN-based light-emitting diode wafers

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Crystal Orientation of GaN Nanostructures Grown on Al₂O₃ and Si(111) with a Zr Buffer Layer