EMI comparison between Si and SiC technology in a boost converter

Bogónez-Franco, Paco; Sendra, Josep Balcells

doi:10.1109/emceurope.2012.6396739

Cited by 44 publications

(16 citation statements)

References 6 publications

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“…While various filter options have been explored as a means of mitigating the EMI noise, an increased noise source caused by the WBG devices generally requires an increase in physical size of the EMI filters [5], [6]. This is not desirable in many applications, namely automotive and aerospace, where weight and size are critical design points.…”

Section: Introductionmentioning

confidence: 98%

A novel inverter topology for reduction of common mode voltage for GaN-based variable frequency inverter

Morris

Han

Sarlioglu

2016

2016 IEEE Transportation Electrification Conference and Expo (ITEC)

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Wide bandgap (WBG) semiconductor power devices are becoming increasing popular as an alternative to conventional Si devices in power applications. While these WBG devices have many inherent benefits, one downside of these devices is the potential for increased emission of electromagnetic interference (EMI) due to the increased switching frequency and turn-on/off capabilities. To mitigate this effect, this paper presents a novel inverter topology to reduce the source of the common mode EMI noise, thus, potentially reducing the required EMI filter size. In this study, the novel topology is implemented as a three-phase voltage source inverter utilizing GaN HEMTs, and is simulated with circuit simulation software LTSpice with device models provided by manufacturer, and results are analyzed with MATLAB. A characterization of the key design parameters for the novel topology is also provided.

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Section: Introductionmentioning

confidence: 98%

A novel inverter topology for reduction of common mode voltage for GaN-based variable frequency inverter

Morris

Han

Sarlioglu

2016

2016 IEEE Transportation Electrification Conference and Expo (ITEC)

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“…This is a result of the increased dv/dt and di/dt transients, which lead to more noise production. To safely and reliably use these new converters at the higher switching speeds, some form of EMI mitigation is required, usually in the form of passive filters [8], [9]. Research has focused on the development of various EMI filters for power converters, both with Si components and WBG devices [10]- [12].…”

Section: Introductionmentioning

confidence: 99%

Comparison and evaluation of common mode EMI filter topologies for GaN-based motor drive systems

Morris

Han

Sarlioglu

2016

2016 IEEE Applied Power Electronics Conference and Exposition (APEC)

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As many industries look to wide bandgap (WBG) devices to replace Si devices in power applications, their effects on the power converter need to be first understood in full. While the benefits of WBG devices are widely known, including high switching frequency operating capability, the special characteristics of these new devices have the potential to cause other issues, in particular electromagnetic interference/ compatibility (EMI/EMC). In this paper, multiple EMI filter topologies are investigated for a motor drive system utilizing WBG devices, GaN HEMTs. The different topologies are simulated using LTSpice circuit simulation software and the results are analyzed and complied with MATLAB. The tradeoffs of different filter topologies, namely attenuation versus efficiency and ground current, are demonstrated, providing crucial information for system level designers implementing WBG power switching devices.

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“…SiC Schottky barrier diode and MOSFET realize fast switching operation in high voltage power conversion circuits [1]. Fast high voltage switching and/or large current induces Electromagnetic cmpatibility (EMC) difficulties stemming from high dv=dt and di=dt [2]. The fast switching operation of one MOSFET in the bridge circuit is known to induce gate voltage fluctuations in the MOSFET on the other side.…”

Section: Introductionmentioning

confidence: 99%

A study on the self turn-on phenomenon of power MOSFET induced by the turn-off operation of body diodes

Funaki

2014

IEICE Electron. Express

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SiC power devices generally operate with fast switching. The fast switching operation in power conversion circuits suffer from the self turn-on phenomenon of a power MOSFET in which the gate voltage is induced to fluctuate by the turn-on operation of the MOS-FET on the other side in the bridge circuit. The self turn-on results in a large power loss, when the fluctuating gate voltage exceeds the threshold gate voltage. This paper analytically discusses the self turn-on phenomenon of the MOSFET related to the turn-off operation of its body diode, which is initiated by the turn-on operation of the MOSFET on the other side in the bridge. This analysis was evaluated experimentally.

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EMI comparison between Si and SiC technology in a boost converter

Cited by 44 publications

References 6 publications

A novel inverter topology for reduction of common mode voltage for GaN-based variable frequency inverter

A novel inverter topology for reduction of common mode voltage for GaN-based variable frequency inverter

Comparison and evaluation of common mode EMI filter topologies for GaN-based motor drive systems

A study on the self turn-on phenomenon of power MOSFET induced by the turn-off operation of body diodes

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