Emerging Carbon Nanotube Electronic Circuits, Modeling, and Performance

Xu, Y.; Srivastava, Ashok; Marulanda, Jose Mauricio

doi:10.1155/2010/864165

Cited by 8 publications

(2 citation statements)

References 26 publications

(51 reference statements)

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“…(20) Figure 6 shows the equivalent circuit of a SWCNT bundle interconnect [82] where N a is the number of upper level SWCNTs and N b is the number of bottom level SWCNTs. For a SWCNT bundle, we assume that all SWCNTs in the bundle are identical and each SWCNT has the same potential across it [83,84].…”

Section: (3) Total Number Of Metallic Swcnts Is N = β(N X N Y -[N Y mentioning

confidence: 99%

Carbon nanotubes for next generation very large scale integration interconnects

Srivastava

Sharma³

2010

J. Nanophoton

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Abstract. We investigated the application of one-dimensional fluid model in modeling of electron transport in carbon nanotubes and equivalent circuits for interconnections and compared the performances with the currently used copper interconnects in very-large-scale integration (VLSI) circuits. In this model, electron transport in carbon nanotubes is regarded as quasi one-dimensional fluid with strong electron-electron interaction. Verilog-AMS in Cadence/Spectre was used in simulation studies. Carbon nanotubes of the types single-walled, multiwalled and bundles were considered for ballistic transport region, local and global interconnections. Study of the S-parameters showed higher transmission efficiency and lower reflection losses. Theoretical modeling and computer-aided simulation studies through a complementary CNT-FET inverter pair, interconnected through a wire, exhibited reduced delays and power dissipations for carbon nanotube interconnects in comparison to copper interconnects in 22 nm and lower technology nodes. The performance of CNT interconnects was shown to be further improved with increase in number of metallic carbon nanotubes. Our study suggests the replacement of copper interconnect with the multiwalled and bundles of single-walled carbon nanotubes for the sub-nanometer CMOS technologies.

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Section: (3) Total Number Of Metallic Swcnts Is N = β(N X N Y -[N Y mentioning

confidence: 99%

Carbon nanotubes for next generation very large scale integration interconnects

Srivastava

Sharma³

2010

J. Nanophoton

Self Cite

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show abstract

“…We used our fluid model to calculate each parameter in the distributed resistor-inductor-capacitor circuit models for SWCNT, MWCNT, and SWCNT-bundle interconnects. 23,24 We also obtained an analytical solution for current transport (static model) in CNT field-effect transistors (FETs) 25 and a dynamic model 26 for analysis and design of CNT-FET-based integrated circuits. Figure 2 shows the CNT-FET inverter pair.…”

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confidence: 99%