Emerging 2D Materials and Their Van Der Waals Heterostructures

Bartolomeo, Antonio Di

doi:10.3390/nano10030579

Cited by 102 publications

(74 citation statements)

References 79 publications

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“…Nowadays, due to the unique electronic properties, van der Waals (vdW) heterostructures consisting of different 2D materials have aroused extensive interests of both experimental and theoretical researchers. [ 1–3 ] The weak vdW interlayer interactions between the constituent layers do not introduce remarkable changes at the atomic scale, but can extend the electronic, mechanical, optical and other properties of 2D materials. Therefore, by integrating together the virtue of its building monolayers, the vdW heterostructures have the opportunity to provide a versatile platform for exploring new phenomena and designing novel materials for high‐performance electronic devices, [ 4–8 ] optoelectronic device, [ 9 ] chemical sensors, [ 10 ] water‐splitting photocatalysts, [ 11–13 ] and thermoelectric generators.…”

Section: Introductionmentioning

confidence: 99%

Type‐II AsP/As van der Waals Heterostructures: Tunable Anisotropic Electronic Structures and Optical Properties

Zhao

Zeng

2021

Adv Materials Inter

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The weak vdW interlayer interactions between the constituent layers do not introduce remarkable changes at the atomic scale, but can extend the electronic, mechanical, optical and other properties of 2D materials. Therefore, by integrating together the virtue of its building monolayers, the vdW heterostructures have the opportunity to provide a versatile platform for exploring new phenomena and designing novel materials for high-performance electronic devices, [4-8] optoelectronic device, [9] chemical sensors, [10] water-splitting photocatalysts, [11-13] and thermoelectric generators. [14] Arsenene (As), a new cousin of phosphorene in group VA, has been predicted in 2015 to be a semiconductor with a wide indirect bandgap (puckered: 0.83 eV; buckled: 1.64 eV), desirable stability and high carrier mobility using density functional theory (DFT), suggesting its potential applications for transistors with high on/off ratios, optoelectronic devices working under blue or UV light. [15-17] In experiment, multilayered arsenene nanoribbons with 14 nm thickness and 2.3 eV bandgap have been successfully synthesized on an InAs substrate by the plasma-assisted process in 2016. [18] Very recently, a freestanding buckled arsenene has been fabricated experimentally with a lattice constant of 3.6 Å on Ag(111). [19] Recently, arsenic-phosphorus (AsP), another new promising 2D layered material, is an alloy of phosphorus and arsenic atoms in the forms of As x P 1−x with excellent electronic and optical properties via tuning the chemical compositions during material synthesis. [20] Long and co-workers have reported the black AsP-based long-wavelength infrared photodetector working at room temperature and it can response to 8.2 µm light experimentally. [21] Later, gated-photoconductors based on b-AsP alloys have been performed as a function of thickness over the composition range of 0-91% As. [22] The specific detectivity can be optimized by adjusting the thickness of the b-P/b-AsP layer to maximize absorption and minimize dark current. In addition, the black phosphorus based infrared photodetectors with fast response of 16 µ s and broadband photodetection up to 2 µm have also been demonstrated in experiments. [23] Subsequently, growing attention has been focused on As and AsP materials in group VA. Particularly, the enthusiasm of researchers has been kindled to study the As-or AsP-based vdW heterojunctions. [24-37] A blue-AsP/CdSe heterostructure van der Waals (vdW) heterostructures, formed by stacking layered materials, have great potential for next-generation nanoelectronics and optoelectronics with unique flexibility and high performance. Using density functional theory, it is demonstrated that all AA-and AB-AsP/As heterostructures are semiconductors with intrinsic type-II band alignments, facilitating the separation of photogenerated electron-hole pairs. The anisotropic electronic structures of the puckered AsP/As vdW heterostructures can be effectively modulated by applying tensile strains. The bandgaps exhibit nonmonotonic varia...

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Section: Introductionmentioning

confidence: 99%

Type‐II AsP/As van der Waals Heterostructures: Tunable Anisotropic Electronic Structures and Optical Properties

Zhao

Zeng

2021

Adv Materials Inter

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“…Such properties include tunable bandgap by the number of layers in the range of 0.7-2.2 eV, mobility comparable or superior to that of Si channels in modern devices, pristine interfaces without out-of-plane dangling bonds, flexibility, transparency, photoluminescence (PL), broadband light response, thermal stability in air, and high scalability for device fabrication. [1][2][3][4] TMDs are produced by mechanical or liquid exfoliation, chemical vapor deposition (CVD), molecular beam epitaxy, pulsed laser deposition, etc. [5,6] FE current from MoS 2 flakes with a low turn-on field and a high field enhancement factor has been reported from both the edges and the flat part of few-layer MoS 2 flakes.…”

Section: Introductionmentioning

confidence: 99%

Gate‐Controlled Field Emission Current from MoS₂ Nanosheets

Pelella

Urban

Passacantando

et al. 2020

Adv Elect Materials

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Monolayer molybdenum disulfide (MoS2) nanosheets, obtained via chemical vapor deposition onto SiO2/Si substrates, are exploited to fabricate field‐effect transistors with n‐type conduction, high on/off ratio, steep subthreshold slope, and good mobility. The transistor channel conductance increases with the reducing air pressure due to oxygen and water desorption. Local field emission measurements from the edges of the MoS2 nanosheets are performed in high vacuum using a tip‐shaped anode. It is demonstrated that the voltage applied to the Si substrate back‐gate modulates the field emission current. Such a finding, that it is attributed to gate‐bias lowering of the MoS2 electron affinity, enables a new field‐effect transistor based on field emission.

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“…In the last ten years, van der Waals heterostructures have demonstrated unprecedented electrocatalytic activity. In contrast to currently published reviews on vdW materials [12][13][14][15][16], this study surveys the progress made in the last three years (2019-2021) and compares 2D-tailored vdW configurations and their intriguing electrocatalytic activities as electrodes in clean energy applications. Our aim is to carefully examine the aggregated advancements in vdW heterostructures, specifically utilized in the area of metal-air battery, and PEM fuel cell, and electrolyzers, and provides an overview as well as a critical insight into their applicability.…”

Section: Introductionmentioning

confidence: 99%

Van der Waals Heterostructures—Recent Progress in Electrode Materials for Clean Energy Applications

Blackstone

Ignaszak

2021

Materials

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The unique layered morphology of van der Waals (vdW) heterostructures give rise to a blended set of electrochemical properties from the 2D sheet components. Herein an overview of their potential in energy storage systems in place of precious metals is conducted. The most recent progress on vdW electrocatalysis covering the last three years of research is evaluated, with an emphasis on their catalytic activity towards the oxygen reduction reaction (ORR), oxygen evolution reaction (OER), and hydrogen evolution reaction (HER). This analysis is conducted in pair with the most active Pt-based commercial catalyst currently utilized in energy systems that rely on the above-listed electrochemistry (metal–air battery, fuel cells, and water electrolyzers). Based on current progress in HER catalysis that employs vdW materials, several recommendations can be stated. First, stacking of the two types vdW materials, with one being graphene or its doped derivatives, results in significantly improved HER activity. The second important recommendation is to take advantage of an electronic coupling when stacking 2D materials with the metallic surface. This significantly reduces the face-to-face contact resistance and thus improves the electron transfer from the metallic surface to the vdW catalytic plane. A dual advantage can be achieved from combining the vdW heterostructure with metals containing an excess of d electrons (e.g., gold). Despite these recent and promising discoveries, more studies are needed to solve the complexity of the mechanism of HER reaction, in particular with respect to the electron coupling effects (metal/vdW combinations). In addition, more affordable synthetic pathways allowing for a well-controlled confined HER catalysis are emerging areas.

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Emerging 2D Materials and Their Van Der Waals Heterostructures

Cited by 102 publications

References 79 publications

Type‐II AsP/As van der Waals Heterostructures: Tunable Anisotropic Electronic Structures and Optical Properties

Type‐II AsP/As van der Waals Heterostructures: Tunable Anisotropic Electronic Structures and Optical Properties

Gate‐Controlled Field Emission Current from MoS₂ Nanosheets

Van der Waals Heterostructures—Recent Progress in Electrode Materials for Clean Energy Applications

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Emerging 2D Materials and Their Van Der Waals Heterostructures

Cited by 102 publications

References 79 publications

Type‐II AsP/As van der Waals Heterostructures: Tunable Anisotropic Electronic Structures and Optical Properties

Type‐II AsP/As van der Waals Heterostructures: Tunable Anisotropic Electronic Structures and Optical Properties

Gate‐Controlled Field Emission Current from MoS2 Nanosheets

Van der Waals Heterostructures—Recent Progress in Electrode Materials for Clean Energy Applications

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Gate‐Controlled Field Emission Current from MoS₂ Nanosheets