Gate‐Controlled Field Emission Current from MoS<sub>2</sub> Nanosheets

Pelella, Aniello; Urban, Francesca; Passacantando, M.; Pollmann, Erik; Sleziona, Stephan; Schleberger, Marika; Bartolomeo, Antonio Di

doi:10.1002/aelm.202000838

Cited by 40 publications

(22 citation statements)

References 77 publications

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“…The

transfer curves of Figure 2 b, shown on both the linear and logarithmic scale, confirm the n-type behavior of the transistor, with off-state at

and on-state for

. The curve on the logarithmic scale shows an on/off current ratio higher than two orders of magnitude and a modest subthreshold swing

V/decade, typical of back-gate 2D transistors with limited gate efficiency and high interface defect density [ 27 , 28 , 29 , 30 ]. The smooth rise of

at negative

indicates the appearance of a hole-type conduction.…”

Section: Resultsmentioning

confidence: 99%

Electric Transport in Few-Layer ReSe2 Transistors Modulated by Air Pressure and Light

et al. 2022

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We report the fabrication and optoelectronic characterization of field-effect transistors (FETs) based on few-layer ReSe2. The devices show n-type conduction due to the Cr contacts that form low Schottky barriers with the ReSe2 nanosheet. We show that the optoelectronic performance of these FETs is strongly affected by air pressure, and it undergoes a dramatic increase in conductivity when the pressure is lowered below the atmospheric one. Surface-adsorbed oxygen and water molecules are very effective in doping ReSe2; hence, FETs based on this two-dimensional (2D) semiconductor can be used as an effective air pressure gauge. Finally, we report negative photoconductivity in the ReSe2 channel that we attribute to a back-gate-dependent trapping of the photo-excited charges.

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“…The

transfer curves of Figure 2 b, shown on both the linear and logarithmic scale, confirm the n-type behavior of the transistor, with off-state at

and on-state for

. The curve on the logarithmic scale shows an on/off current ratio higher than two orders of magnitude and a modest subthreshold swing

V/decade, typical of back-gate 2D transistors with limited gate efficiency and high interface defect density [ 27 , 28 , 29 , 30 ]. The smooth rise of

at negative

indicates the appearance of a hole-type conduction.…”

Section: Resultsmentioning

confidence: 99%

Electric Transport in Few-Layer ReSe2 Transistors Modulated by Air Pressure and Light

et al. 2022

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“…sistors, [3] photodetectors, [4] solar cells, [5] field emitters, [6,7] memory devices, [8] and gas sensors. [9,10] Noble TMDs like platinum diselenide, PtSe 2 , are currently the subject of intense research endeavour.…”

mentioning

confidence: 99%

Coexistence of Negative and Positive Photoconductivity in Few‐Layer PtSe₂ Field‐Effect Transistors

Grillo

Faella

Pelella

et al. 2021

Adv Funct Materials

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Platinum diselenide (PtSe 2 ) field-effect transistors with ultrathin channel regions exhibit p-type electrical conductivity that is sensitive to temperature and environmental pressure. Exposure to a supercontinuum white light source reveals that positive and negative photoconductivity coexists in the same device. The dominance of one type of photoconductivity over the other is controlled by environmental pressure. Indeed, positive photoconductivity observed in high vacuum converts to negative photoconductivity when the pressure is raised. Density functional theory calculations confirm that physisorbed oxygen molecules on the PtSe 2 surface act as acceptors. The desorption of oxygen molecules from the surface, caused by light irradiation, leads to decreased carrier concentration in the channel conductivity. The understanding of the charge transfer occurring between the physisorbed oxygen molecules and the PtSe 2 film provides an effective route for modulating the density of carriers and the optical properties of the material.

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“…Similar features appear in other thin film emitters. [ 12–18 ] However, in the case of a higher electric field, the F–N curve shows a linear relationship with a negative slope, showing the traditional cold cathode emission, which conforms to the classical electron tunneling mechanism.…”

Section: Resultsmentioning

confidence: 80%

“…Therefore, research on field electron emitters for various materials is increasing. [ 12–22 ] Because SrTiO 3 has the advantages of excellent photoelectric performance of perovskite material and stability of inorganic material, it also shows great development potential in the field of field emission (FE). [ 23–25 ]…”

Section: Introductionmentioning

confidence: 99%

Enhanced Field Emission Properties of ZnO:Al/SrTiO₃ Perovskite Composite Films by ZnO:Al Film

Wang

et al. 2022

Physica Status Solidi (a)

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ZnO:Al(Al‐doped zinc oxide)/SrTiO3 composite thin film field emission (FE) devices are fabricated on heavily doped n‐type silicon substrates using a vacuum electron beam evaporation vapor deposition technique and hydrogen plasma treated technique. The morphology and thickness of SrTiO3 film and ZnO:Al film are controlled by adjusting and optimizing the growth conditions, deposition time, and post‐treatment conditions. FE experimental results show that the addition of ZnO:Al films can significantly improve the FE properties of ZnO:Al/SrTiO3 composite film. The maximum current density of the FE sample increases from 230 μA cm−2 of the monolayer SrTiO3 film sample, which is treated by hydrogen plasma (H–SrTiO3) to 951 μA cm−2 of the ZnO:Al/H–SrTiO3 composite film sample, which increases by more than 4 times. Meanwhile, at the applied electric field intensity of 3.6 V μm−1, the FE current density of ZnO:Al/H–SrTiO3 composite film is 48 times that of monolayer H–SrTiO3 film. Each field emission sample device has good working stability and experimental repeatability.

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Gate‐Controlled Field Emission Current from MoS₂ Nanosheets

Cited by 40 publications

References 77 publications

Electric Transport in Few-Layer ReSe2 Transistors Modulated by Air Pressure and Light

Electric Transport in Few-Layer ReSe2 Transistors Modulated by Air Pressure and Light

Coexistence of Negative and Positive Photoconductivity in Few‐Layer PtSe₂ Field‐Effect Transistors

Enhanced Field Emission Properties of ZnO:Al/SrTiO₃ Perovskite Composite Films by ZnO:Al Film

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Gate‐Controlled Field Emission Current from MoS2 Nanosheets

Cited by 40 publications

References 77 publications

Electric Transport in Few-Layer ReSe2 Transistors Modulated by Air Pressure and Light

Electric Transport in Few-Layer ReSe2 Transistors Modulated by Air Pressure and Light

Coexistence of Negative and Positive Photoconductivity in Few‐Layer PtSe2 Field‐Effect Transistors

Enhanced Field Emission Properties of ZnO:Al/SrTiO3 Perovskite Composite Films by ZnO:Al Film

Contact Info

Product

Resources

About

Gate‐Controlled Field Emission Current from MoS₂ Nanosheets

Coexistence of Negative and Positive Photoconductivity in Few‐Layer PtSe₂ Field‐Effect Transistors

Enhanced Field Emission Properties of ZnO:Al/SrTiO₃ Perovskite Composite Films by ZnO:Al Film