Emergence of a Novel Pseudogap Metallic State in a Disordered 2D Mott Insulator

Lahoud, E.; Meetei, O. Nganba; Chaska, K. B.; Kanigel, Amit; Trivedi, Nandini

doi:10.1103/physrevlett.112.206402

Cited by 58 publications

(53 citation statements)

References 39 publications

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“…However, this case yields broad spectral features with a symmetric dip at E F (refs 38, 39), which is clearly distinguished from the sharp spectral feature close to E F of the present case. On the other hand, the disorder is also known to reduce the correlation energy U in general3739. This type of the disorder contribution is not excluded.…”

Section: Discussioncontrasting

confidence: 43%

Nanoscale manipulation of the Mott insulating state coupled to charge order in 1T-TaS2

et al. 2016

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The controllability over strongly correlated electronic states promises unique electronic devices. A recent example is an optically induced ultrafast switching device based on the transition between the correlated Mott insulating state and a metallic state of a transition metal dichalcogenide 1T-TaS2. However, the electronic switching has been challenging and the nature of the transition has been veiled. Here we demonstrate the nanoscale electronic manipulation of the Mott state of 1T-TaS2. The voltage pulse from a scanning tunnelling microscope switches the insulating phase locally into a metallic phase with irregularly textured domain walls in the charge density wave order inherent to this Mott state. The metallic state is revealed as a correlated phase, which is induced by the moderate reduction of electron correlation due to the charge density wave decoherence.

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Section: Discussioncontrasting

confidence: 43%

Nanoscale manipulation of the Mott insulating state coupled to charge order in 1T-TaS2

et al. 2016

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“…A finite σ dc indicates the onset of a metallic phase in which the conductivity grows with increasing disorder. Similar enhancement of the conductivity was found for disorder chosen from a uniform box potential [−V , +V ] [23][24][25], indicating that the emergence of the metallic phase is ubiquitous.…”

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confidence: 62%

Local Spectroscopies Reveal Percolative Metal in Disordered Mott Insulators

et al. 2020

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We elucidate the mechanism by which a Mott insulator transforms into a non-Fermi liquid metal upon increasing disorder at half filling. By correlating maps of the local density of states, the local magnetization and the local bond conductivity, we find a collapse of the Mott gap toward a V-shape pseudogapped density of states that occurs concomitantly with the decrease of magnetism around the highly disordered sites but an increase of bond conductivity. These metallic regions percolate to form an emergent non-Fermi liquid phase with a conductivity that increases with temperature. Bond conductivity measured via local microwave impedance combined with charge and spin local spectroscopies are ideal tools to corroborate our predictions.

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“…To further establish the relationship between the observed gap and a disordered Mott system, we look for a universal scaling relationship of the density of states with energy ( ( )). We find that most of the numerical calculations using the Hubbard model predict a power-law dependence [12][13][14]35,36 for ( ). We track the power-law exponent in the experimental data across the IMT by fitting the tunneling spectra shown in Fig.…”

Section: Discussion and Summarymentioning

confidence: 88%

Disorder induced power-law gaps in an insulator–metal Mott transition

Wang

Okada

O’Neal

et al. 2018

Proc. Natl. Acad. Sci. U.S.A.

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A correlated material in the vicinity of an insulator-metal transition (IMT) exhibits rich phenomenology and variety of interesting phases. A common avenue to induce IMTs in Mott insulators is doping, which inevitably leads to disorder. While disorder is well known to create electronic inhomogeneity, recent theoretical studies have indicated that it may play an unexpected and much more profound role in controlling the properties of Mott systems. Theory predicts that disorder might play a role in driving a Mott insulator across an IMT, with the emergent metallic state hosting a power law suppression of the density of states (with exponent close to 1; V-shaped gap) centered at the Fermi energy. Such V-shaped gaps have been observed in Mott systems but their origins are as yet unknown. To investigate this, we use scanning tunneling microscopy and spectroscopy to study isovalent Ru substitutions in Sr3(Ir1-xRux)2O7 (0≤x≤0.5) which drives the system into an antiferromagnetic, metallic state. Our experiments reveal that many core features of the IMT such as power law density of states, pinning of the Fermi energy with increasing disorder, and persistence of antiferromagnetism can be understood as universal features of a disordered Mott system near an IMT and suggest that V-shaped gaps may be an inevitable consequence of disorder in doped Mott insulators.

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Emergence of a Novel Pseudogap Metallic State in a Disordered 2D Mott Insulator

Cited by 58 publications

References 39 publications

Nanoscale manipulation of the Mott insulating state coupled to charge order in 1T-TaS2

Nanoscale manipulation of the Mott insulating state coupled to charge order in 1T-TaS2

Local Spectroscopies Reveal Percolative Metal in Disordered Mott Insulators

Disorder induced power-law gaps in an insulator–metal Mott transition

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