Embedded high-precision frequency-based capacitor measurement system

Welter, Loic; Dreux, Philippe; Portal, Jean‐Michel; Aziza, Hassen

doi:10.1109/iolts.2013.6604061

Cited by 8 publications

(4 citation statements)

References 11 publications

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“…In order to accurately evaluate the benefits of our proposed scheme on large memory arrays, BL and WL lengths have been modelled to mimic a 1 Mbyte array (made of 1024 WLs and 1024x8-bits BLs). As a BL is characterized by a parasitic capacitance distributed through its length, a 1 pF bit-line capacitance is used according to the targeted technology [21]. Additionally, parasitic resistances [22] distributed along BLs/WLs have been inserted, following the methodology developed in [23].…”

Section: A Simulation Setupmentioning

confidence: 99%

Design Considerations Towards Zero-Variability Resistive RAMs in HRS State

Aziza

Coulié

Rahajandraibe

2021

2021 IEEE 22nd Latin American Test Symposium (LATS)

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Resistive RAM (RAM) intrinsic variability is widely recognized as a major hurdle for widespread adoption of the technology. Moreover, the deeper we go into the High Resistance State (HRS), the higher the variability. In this context, this paper proposes circuit level design strategies to mitigate HRS variability. During the RESET operation, the programming current is strictly controlled while the voltage across the RRAM cell is regulated. From a design standpoint, a write termination circuit is used to constantly sense the programming current and stop the RESET pulse when the preferred RESET current is reached. The write termination is combined with a voltage regulator which provides a strict control of the RESET voltage. The paper first reviews the RRAM variability phenomenon. Then, an optimized programming scheme is developed to control the HRS state to approach zero-variability. Compared to the classical fixed-pulse programming scheme, variability is reduced by 99%.

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Section: A Simulation Setupmentioning

confidence: 99%

Design Considerations Towards Zero-Variability Resistive RAMs in HRS State

Aziza

Coulié

Rahajandraibe

2021

2021 IEEE 22nd Latin American Test Symposium (LATS)

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“…In the scope of using prepared monitoring functions to enhance the responsiveness of the method, a previously developed oxide thickness measurement function is implemented [5]. It is composed of 200 logic gates, was developed and tested within a single test structure and occupies an area of 2100 m .…”

Section: B Standalone Capacitance Monitoring Functionmentioning

confidence: 99%

“…That's why the critical part composed of the ring oscillator and the selection mode is extracted for each topology. The accuracy of the monitoring function is largely influenced by the process variation [5]. Therefore Monte-Carlo post-layout simulations have been performed on the extracted functions.…”

Section: In-circuit Capacitance Monitoring Function Implementationmentioning

confidence: 99%

An innovative standard cells remapping method for in-circuit critical parameters monitoring

Welter

Dreux

Aziza

et al. 2014

2014 IEEE 20th International on-Line Testing Symposium (IOLTS)

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This paper introduces a new way of monitoring critical parameters directly inside circuits. It describes a flow able to transform a circuit into a test vehicle: the concept is called topological exchange. The principle is to remap existing standard cells to create monitoring functions. The flow is detailed through a specific example of oxide thickness monitoring and the method is validated with post-layout simulations.

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“…Another technique is based on an oscillating structure whose frequency is influenced by the measured capacitor. Unlike previously described techniques, this one does not require any analogical external measurement instrument, but a frequency metre [4]. A ring oscillator is composed of an odd number ( N ) of inverters which forms a circular chain (see Fig.…”

Section: Introductionmentioning

confidence: 99%

Embedded high‐precision capacitor measurement system based on ring‐oscillator

et al. 2015

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A direct way to measure the electrical value of capacitors embedded in a circuit using a ring-oscillator is presented. A calibration system ensures the robustness of the measurement process against temperature, power supply and process variations. Silicon results show the ability of the system to measure robustly a large range of small capacitors. The system also provides a noise immunity as the system provides a digital signature of the capacitor value.Introduction: The determination of capacitances formed by metal-oxide semiconductor transistor gate oxide or inter-metal dielectric (IMD) is essential for monitoring insulating layer thicknesses. Capacitor measurement methods can be divided into two categories: external and embedded methods, each having advantages and drawbacks.The external method consists in measuring capacitors directly on silicon, with an external capacitance metre. With this technique, only large capacitors (several picofarads) can be measured because of the kT/C thermal noise introduced by the cable lengths used for the measurement [1]. Embedded measurement methods consist in using on silicon a system that converts the electrical capacitance value into another physical quantity that is easier to measure.A widely used technique is the charge-based capacitance measurement (CBCM) technique [2] where the measured capacitor is alternatively charged and discharged via a controlled pseudo-inverter. The capacitance value is obtained by measuring and averaging the total current flowing through the pseudo-inverter. The technique has been improved so that the charge injection phenomenon induced by the pseudo-inverter can be compensated. The method is called CBCM charge injection-induced errors free (CIEF) [3]. The working principle is based on the measurement of the total current of the pseudo-inverter without the capacitor (i.e. the capacitor is 'cancelled'). This 'cancellation' is performed by applying the same voltage across the capacitor.

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Embedded high-precision frequency-based capacitor measurement system

Cited by 8 publications

References 11 publications

Design Considerations Towards Zero-Variability Resistive RAMs in HRS State

Design Considerations Towards Zero-Variability Resistive RAMs in HRS State

An innovative standard cells remapping method for in-circuit critical parameters monitoring

Embedded high‐precision capacitor measurement system based on ring‐oscillator

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