Ellipsometric study of single-crystal γ-InSe from 1.5 to 9.2 eV

Choi, Sungwon; Aspnes, D. E.; Fuchser, Andrea; Martı́nez-Tomás, C.; Sanjosé, V. Muñoz; Levi, Dean H.

doi:10.1063/1.3420080

Cited by 13 publications

(3 citation statements)

References 19 publications

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“…5. According to the ellipsometric study on InSe layered crystal, 22 the spectra of dielectric constant obtained on an optically uniaxial crystal oriented with the optic axis perpendicular to the crystal surface are a close approximation to the ordinary component of the dielectric tensor of the crystal, since the c-axis contribution is reduced approximately by 1/ε. 23,24 The spectra of imaginary component exhibit two peaks which is an indication of the strong absorption of photon energy at the corresponding critical points.…”

Section: Resultsmentioning

confidence: 98%

Optical characterization of Ga2SeS layered crystals by transmission, reflection and ellipsometry

Isik

Gasanly

2015

Mod. Phys. Lett. B

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Optical properties of [Formula: see text] crystals grown by Bridgman method were investigated by transmission, reflection and ellipsometry measurements. Analysis of the transmission and reflection measurements performed in the wavelength range of 400–1100 nm at room temperature indicated the presence of indirect and direct transitions with 2.28 eV and 2.38 eV band gap energies. Ellipsometry measurements were carried out in the 1.2–6.0 eV spectral region to get information about optical constants, real and imaginary parts of the pseudodielectric function. Moreover, the critical point (CP) analysis of the second derivative spectra of the pseudodielectric constant in the above band gap region was accomplished. The analysis revealed the presence of five CPs with energies of 3.87, 4.16, 4.41, 4.67 and 5.34 eV.

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Section: Resultsmentioning

confidence: 98%

Optical characterization of Ga2SeS layered crystals by transmission, reflection and ellipsometry

Isik

Gasanly

2015

Mod. Phys. Lett. B

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“…Indium selenide (InSe) is an important material and it belongs to a special semiconductor alloys group III-VI. The structural, optical [12, 13, 14], electronic [15, 16] and electrical [17, 18, 19] properties of InSe have been studied by various researchers. It is a layered semiconductor made of stacked layers of Se–In–In–Se atoms [20].…”

Section: Introductionmentioning

confidence: 99%

Composition dependent structural phase transition and optical band gap tuning in InSe thin films

Singh

et al. 2019

Heliyon

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Bulk alloys of InxSe100-x (x = 5, 10, 20, 30, 40 and 50) are prepared using melt quenching technique. Thin films having thickness ~750 nm of these prepared bulk alloys are fabricated using thermal evaporation technique on glass substrate. The as-deposited InxSe100-x thin films with x ≤ 40 are amorphous and In50Se50 thin film is crystalline in nature verified from X-ray diffraction (XRD). The change in morphology of deposited thin films with indium content also verifies structural phase transition and found that the phase transition started with x = 40 which is not detected in XRD pattern. The drastic change in transmission is found with 50% indium content. In50Se50 thin film has less than 30% transmission whereas other films are highly transparent. Optical band gap is calculated using Tauc's plot and decrease in optical band gap is observed with indium content. The variation of optical band gap from 1.88 eV to 1.12 eV is achieved with indium content of 5%–50%. The structural transition and change in optical band gap depict that InSe thin films are potential candidates in various technological applications.

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“…The cleavage plane of the GaSe:InS crystal was found to be orthogonal to the growth direction that is quite a rare event for layered chalcogenide compounds. [5][6][7][8][10][11][12][13]20,[24][25][26][27][28] Due to such orientation of the cleavage plane, the crystal was broken into several 15-30 mm pieces during cooling. A view through the cleaved faces of one such piece is shown in Fig.…”

Section: Introductionmentioning

confidence: 99%

Growth and microstructure of heterogeneous crystal GaSe:InS

et al. 2013

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An optical quality GaSe:InS single crystal has been grown by modified Bridgman technique using nonstationary temperature distribution for effective melt mixing. The phase composition of the crystal has been verified with XRD and TEM. The chemical composition variation along the crystal has been evaluated with electron probe microanalysis (EPMA), atomic-emission spectrometry with inductively-coupled plasma (ICP-AES) and atomic-absorption spectrometry (AAS). The joint solubility limits in the GaSe:InS system are measured as y In = 0.28 at% and y S = 7 at%. The optical properties of GaSe:InS crystal have been obtained with spectroscopic ellipsometry (SE). ExperimentThe starting materials for crystal growth were Ga (6N) and Se, In, S (5N). At the first stage, polycrystalline compounds GaSe

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Ellipsometric study of single-crystal γ-InSe from 1.5 to 9.2 eV

Cited by 13 publications

References 19 publications

Optical characterization of Ga2SeS layered crystals by transmission, reflection and ellipsometry

Optical characterization of Ga2SeS layered crystals by transmission, reflection and ellipsometry

Composition dependent structural phase transition and optical band gap tuning in InSe thin films

Growth and microstructure of heterogeneous crystal GaSe:InS

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