The Lu2.98Ce0.01Y0.01Al5O12 and Y2.99Ce0.01Al5O12 phosphors were synthesized by solid state reaction at temperature 1623 K and pressure 1.5 × 10(7) Pa in (95% N2 + 5% H2) atmosphere. Under the conditions, the compounds crystallize in the form of isolated euhedral partly faceted microcrystals ∼19 μm in size. The crystal structures of the Lu2.98Ce0.01Y0.01Al5O12 and Y2.99Ce0.01Al5O12 garnets have been obtained by Rietveld analysis. The photoluminescence (PL) and X-ray excited luminescence (XL) spectra obtained at room temperature indicate broad asymmetric bands with maxima near 519 and 540 nm for Y2.99Ce0.01Al5O12 and Lu2.98Ce0.01Y0.01Al5O12, respectively. The light source was fabricated using the powder Lu2.98Ce0.01Y0.01Al5O12 phosphor and commercial blue-emitting n-UV LED chips (λ(ex) = 450 nm). It is found that the CIE chromaticity coordinates are (x = 0.388, y = 0.563) with the warm white light emission correlated color temperature (CCT) of 6400 K and good luminous efficiency of 110 lm/W.

An optical quality GaSe:InS single crystal has been grown by modified Bridgman technique using nonstationary temperature distribution for effective melt mixing. The phase composition of the crystal has been verified with XRD and TEM. The chemical composition variation along the crystal has been evaluated with electron probe microanalysis (EPMA), atomic-emission spectrometry with inductively-coupled plasma (ICP-AES) and atomic-absorption spectrometry (AAS). The joint solubility limits in the GaSe:InS system are measured as y In = 0.28 at% and y S = 7 at%. The optical properties of GaSe:InS crystal have been obtained with spectroscopic ellipsometry (SE). ExperimentThe starting materials for crystal growth were Ga (6N) and Se, In, S (5N). At the first stage, polycrystalline compounds GaSe

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