Ellipsometric studies on cupric telluride thin films

Amine-assisted solution approach for the synthesis and growth mechanism of super-long rough-surfaced Cu7Te4 nanobelts

“…The electrical conductivity increasing with increasing temperature indicates the typical electrical conductivity of the semiconductor of the copper telluride film. 16 The similar transport mechanism has been observed for PbS, 52 PbTe 53 and AgPb 10 SbTe 12 54 crystals by our research group. As we all know, one-dimensional nanostructures have advantages over nanoparticles, such as, rapid diffusion-free electron transport along the long direction and the low number of grain boundaries.…”

“…Copper-tellurium alloys exhibit interesting behaviors like the structural phase transition and the variation of the band gap as a function of the component composition. Therefore, these copper telluride materials may find applications in solar cells [15][16][17] and thermoelectric converters. 18 Cu x Te (1 ¡ x ¡ 2) is one of the most commonly used conductive backcontacting materials for high-efficiency CdTebased solar cells because it can form a p+ interface with the CdTe absorber, thus reducing the barrier height caused by high CdTe work function.…”

“…15 For instance, it has been reported that CuTe films are suitable solar materials with an optical band gap of 1.5 eV. 16 Cu 22x Te (E g y 1.08 eV) as a low-E g back-contact material has been proposed to improve the near-infrared transmittance of CdTe solar cells device. 17 In addition, Copper telluride (Cu 2 Te), a photoemissive p-type semiconductor (band gap 0.673 eV), is a promising material for thermoelectric converters.…”

In Situ Observation of Thermally Induced Structural Transitions in Vacancy-Doped Cuprous Telluride (Cu2–xTe) Nanowires Using Raman Spectroscopy

“…The Raman spectrum of Te NWs exhibits three sharp Raman bands located at 91, 120, and 139 cm –1 that are assigned to the E 1 transverse (TO) phonon mode, A 1 mode, and E 2 mode, respectively (Figure D). These Raman features are in good accordance with previous observations of Te nanostructures in the literature. , In contrast, Cu 2– x Te NWs possess a broad spectral feature with weak Raman bands at 68, 77, 116, and 138 cm –1 . ,, A contribution to Raman features originating from the elemental Te can be excluded in the Raman spectrum of Cu 2– x Te NWs. Both SEM and TEM measurements reveal uniform nanowire morphology for both Te NWs and Cu 2– x Te NWs (Figure ).…”

Influence of substrate temperature on the structural, morphological, optical and electrical properties of copper telluride thin films prepared by electron beam evaporation method

“…They observed that the films annealed at temperatures from 200 to 400 C exhibit mixed phases whereas the film annealed at 500 C shows Cu 2 Te phase. Neyvasagam et al [9] investigated the optical properties of CuTe thin films (30 -150 nm thickness) prepared at 300 K by thermal evaporation method.…”