Ellipsometric studies of the dielectric function of SnSe and a simple model of the electronic structure and the bonds of the orthorhombic IV-VI compounds

Logothetidis, S.; Polatoglou, Hariton Μ.

doi:10.1103/physrevb.36.7491

Cited by 42 publications

(15 citation statements)

References 35 publications

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“…Knowledge of the optical properties of SnS x Se 1−x is required to design and fabricate these devices efficiently and to bring them to realistic applications. Several reports have been published on the optical properties of SnS x Se 1−x [10][11][12][13][14][15][16][17][18], but only at selected compositions [16][17][18][19][20]. Knowledge of the optical properties of SnS x Se 1−x at arbitrary composition x, which can be achieved by using spectroscopic ellipsometry (SE) data with the Tauc-Lorentz (TL) modelling, where T refers to the Tauc joint density of states model and L to the Lorentz oscillator, is important for practical device applications.…”

Section: Introductionmentioning

confidence: 99%

Optical Properties of Anisotropic SnSxSe1−x for Arbitrary Compositions

Nguyen

Kim

et al. 2020

J. Korean Phys. Soc.

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Here, we report parameter values for the model dielectric function (ε = ε1 +iε2) of the SnSxSe1−x alloy in the spectral range from 0.74 to 6.4 eV and the composition range 0 ≤ x ≤ 1 by using the Tauc-Lorentz (TL) model. The experimentally reported dielectric function data for SnSxSe1−x along the zigzag (a) and the armchair (b) directions were borrowed from a previous study for selected compositions. We successfully reproduced the asymmetric nature of the dielectric function with TL lineshapes. The ε data are parameterized by using six and seven TL components for the zigzag and the armchair directions, respectively. The obtained parameters at several compositions were fit with cubic polynomials, which can be used to determine the dielectric function and the refractive index as continuous functions of the energy and the composition. Our results will be useful for optoelectronic device design based on SnSxSe1−x materials.

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Section: Introductionmentioning

confidence: 99%

Optical Properties of Anisotropic SnSxSe1−x for Arbitrary Compositions

Nguyen

Kim

et al. 2020

J. Korean Phys. Soc.

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“…The structures are intermediate between three and two-dimensional nature. The material finds wide applications in opto-electronics and memory switching [1,2]. There are no reports available on the effect of pressure on the electrical resistance and thermoelectric power in these interesting semiconducting compounds.…”

Section: Introductionmentioning

confidence: 99%

Impact of electrical resistance and TEP in layered SnSe crystals under high pressure

Agarwal

Trivedi

Lakshminarayana

2005

Cryst. Res. Technol.

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SnSe crystals belong to IV-VI layered binary semiconducting compound category. These layered compounds have generated a great deal of interest due to their interesting electronic properties. These electronic materials are useful because of their applications in holographic-recording systems, optoelectronics and memory switching. Earlier, several investigators have studied and reported the influence of temperature and pressure over the phase transitions in SnS and SnSe semiconductors. They also utilized Mossbauer Spectroscopy and Hydrostatic Pressure techniques to examine the bonding of the Sn atoms in SnS and SnSe. It is therefore thought worthwhile to study the effect of pressure on the thermoelectric power and the electrical resistance of SnSe crystals synthesized by a modified direct vapour transport technique. The electrical resistance has been found to be pressure dependent. The transition in electrical resistance behaviour, observed at 65 Kbar, has been explained on the basis of transition from a predominantly two-dimensional material to a more threedimensional one. Similar to the resistance behaviour, the thermoelectric power is also found to be pressure dependent. The increase in thermoelectric power with pressure at the transition pressure of 65 Kbar has been explained. The implications are discussed.

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“…However, this latter factor can be ignored because the time taken for each measurement is 90 s, so the total measurement time is less than 60 min. According to Logothetidis et al [24], the oxidation is small enough to be neglected. The point-by-points fitting for each wavelength was performed to extract the pure dielectric response of SnS.…”

Section: Resultsmentioning

confidence: 99%

Azimuthal angle dependent dielectric function of SnS by ellipsometry

Nguyen

Jung

Kim

et al. 2021

J. Korean Phys. Soc.

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Since α-SnS has optically strong anisotropic characteristics, a simple method to determine its crystal orientation is strongly needed in device engineering. In this report, by measuring dielectric function ε = ε 1 + iε 2 of α-SnS in the 1-5 eV spectral region with the full azimuthal angle range, we could find a simple relationship between measured dielectric function values and the orientation of the α-SnS crystal axis. Therefore, during the device manufacturing process, one can use spectroscopic ellipsometry to quickly measure the dielectric response of the α-SnS region of the device to correctly orient the SnS along the preferred direction for the best performance of the device. We also performed the azimuthal angle-dependent analysis of the critical points (CP) analysis, which shows that the positions of CP energies are basically invariant, while their amplitudes and lineshapes strongly depend on the azimuthal angle.

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Ellipsometric studies of the dielectric function of SnSe and a simple model of the electronic structure and the bonds of the orthorhombic IV-VI compounds

Cited by 42 publications

References 35 publications

Optical Properties of Anisotropic SnSxSe1−x for Arbitrary Compositions

Optical Properties of Anisotropic SnSxSe1−x for Arbitrary Compositions

Impact of electrical resistance and TEP in layered SnSe crystals under high pressure

Azimuthal angle dependent dielectric function of SnS by ellipsometry

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