Ellipsometric characterization of multilayer transistor structures

Woollam, John A.; Snyder, Paul G.; Merkel, Kenneth G.; Alterovitz, Samuel A.

doi:10.1016/0921-5107(90)90071-i

Cited by 8 publications

(7 citation statements)

References 9 publications

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“…could be explained as a pure NiO film. These results possibly indicate that ZnO in the superlattice has the rock salt structure, and we obtained the same results for [(NiO) 6 /(ZnO) 4 ]16 and [(NiO) 12 / (ZnO) 6 ]10 .In the XRD pattern of [(NiO) 20 /(ZnO) 10 ] 4…”

supporting

confidence: 80%

“…It was assumed that the artificial superlattice films prepared in this study were regarded as uniform thin films. 10 The Marquardt method 26 was employed to determine the complex refractive index of thin films from ellipsometric parameters measured at different incident angles. The least-squares calculation was used to find a minimum for…”

Section: (3) Analysis Of Ellipsometric Datamentioning

confidence: 99%

“…In this technique, the film thickness and refractive index are simultaneously determined from the change in the polarizing state of incident light due to reflection on the film. Variable-angle spectroscopic ellipsometry (VASE), [9][10][11][12] in which the glancing angle and the wavelength of incident light are variable in order to precisely determine the dispersion of op-tical constants, is commonly used for the characterization of many kinds of thin films, such as multiple heterostructures of semiconductor compounds, ion-planted GaAs, 13,14 and so on. However, studies on transparent oxide artificial superlattices have not been done.…”

Section: Introductionmentioning

confidence: 99%

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Spectroscopic Ellipsometry of Nickel Oxide/Zinc Oxide Artificial Superlattices

Tsurumi

Nishizawa

et al. 1998

Journal of the American Ceramic Society

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Thin films of ZnO and NiO and their superlattices were made by an ion beam sputtering technique. The dielectric functions of these films were measured as a function of photon energy using a variable-angle spectroscopic ellipsometer. Artificial superlattices were formed in [(NiO) 12 / (ZnO) 6 ] 10 , [(NiO) 6 /(ZnO) 4 ] 16 , and [(NiO) 7 /(ZnO) 8 ] 12 films, where ZnO had the rock salt structure rather than the wurtzite type of structure. The dielectric functions of these superlattices were markedly different from those of pure ZnO, NiO, and their mixtures. However, ZnO had the wurtzite type of structure in [(NiO) 10 /(ZnO) 20 ] 4 . In this film, the epitaxial relation which enables the formation of an artificial superlattice was not observed between ZnO and NiO layers, and the dielectric function could be interpreted as a simple mixture of ZnO and NiO.

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supporting

confidence: 80%

Section: (3) Analysis Of Ellipsometric Datamentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

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Spectroscopic Ellipsometry of Nickel Oxide/Zinc Oxide Artificial Superlattices

Tsurumi

Nishizawa

et al. 1998

Journal of the American Ceramic Society

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“…The WVASE software library provides optical constants of the surrounding AlSb layers, the GaSb or InAs cap, and the GaSb buffer and substrate, 14 and the model assumes that there are no reflections from the backside of the substrate. The process of modeling a superlattice as a single layer and fitting its optical constants has been demonstrated in GaAs/AlGaAs 15,16 and InAs/GaInSb 17 superlattices. A wavelength by wavelength analysis 18 of the measured ellipsometric parameters, W and D, provides the optical constants, e 1 and e 2 , and the absorption coefficient (a ¼ 4pk=k for extinction coefficient k and photon wavelength k) of the InAs/InAsSb superlattice.…”

mentioning

confidence: 99%

Absorption properties of type-II InAs/InAsSb superlattices measured by spectroscopic ellipsometry

Webster

Riordan

Liu

et al. 2015

Applied Physics Letters

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“…The ellipsometric parameters Ψ and ∆ are acquired at an angle of incidence (AOI) between 55°and 80°with a 5°step covering photon energy ω from 1.5 to 6 eV. Since the SL region has distinct optical properties than its constituent materials, the SL is modeled as a single layer with its own unique set of optical constants [49][50][51].…”

mentioning

confidence: 99%

Localized Energy States Induced by Atomic-Level Interfacial Broadening in Heterostructures

Attiaoui,

Fettu,

Mukherjee

et al. 2022

Preprint

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A theoretical framework incorporating atomic-level interfacial details is derived to include the electronic structure of buried interfaces and describe the behavior of charge carriers in heterostructures in the presence of finite interfacial broadening. Applying this model to ultrathin heteroepitaxial (Si1−xGex)m/(Si)m superlattices predicts the existence of localized energy levels in the band structure induced by sub-nanometer broadening, which provides additional paths for hole-electron recombination. These predicted interfacial electronic transitions and the associated absorptive effects are confirmed experimentally at variable superlattice thickness and periodicity. By mapping the energy of the critical points, the optical transitions are identified between 2 and 2.5 eV thus extending the optical absorption to lower energies. This phenomenon enables a straightforward and non-destructive probe of the atomic-level broadening in heterostructures.

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Ellipsometric characterization of multilayer transistor structures

Cited by 8 publications

References 9 publications

Spectroscopic Ellipsometry of Nickel Oxide/Zinc Oxide Artificial Superlattices

Spectroscopic Ellipsometry of Nickel Oxide/Zinc Oxide Artificial Superlattices

Absorption properties of type-II InAs/InAsSb superlattices measured by spectroscopic ellipsometry

Localized Energy States Induced by Atomic-Level Interfacial Broadening in Heterostructures

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