2009
DOI: 10.1063/1.3072366
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Ellipsoidal InAs quantum dots observed by cross-sectional scanning tunneling microscopy

Abstract: DOI to the publisher's website. • The final author version and the galley proof are versions of the publication after peer review. • The final published version features the final layout of the paper including the volume, issue and page numbers. Link to publication General rights Copyright and moral rights for the publications made accessible in the public portal are retained by the authors and/or other copyright owners and it is a condition of accessing publications that users recognise and abide by the legal… Show more

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Cited by 56 publications
(32 citation statements)
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References 22 publications
(26 reference statements)
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“…7. The QDs were found to have an ellipsoidal shape similar to that already reported for InAs/GaAs QDs, 30 with a constant diameter of 25 nm. The QD height (h) was found to progressively increase with the Sb content from 3.3 (0% Sb) to 7.5 nm (14% Sb), and then remains constant, as reported in Ref.…”
Section: Electronic Structure Calculationsupporting
confidence: 60%
“…7. The QDs were found to have an ellipsoidal shape similar to that already reported for InAs/GaAs QDs, 30 with a constant diameter of 25 nm. The QD height (h) was found to progressively increase with the Sb content from 3.3 (0% Sb) to 7.5 nm (14% Sb), and then remains constant, as reported in Ref.…”
Section: Electronic Structure Calculationsupporting
confidence: 60%
“…6 The sample was cleaved at the perpendicular ͑110͒ surface enabling STM with atomic resolution to image the cross-sectional surface through the QDs. 11,13 The XSTM results are from one of the QDs presenting the largest cross-section. 11,13 The bias applied to the sample was −2.8 V and under these circumstances, electrons tunnel from the sample to the tip from the occupied valence-band/QD hole states and the total current is mainly sensitive to topographic profiles of the sample surface and to a much smaller extent sensitive to the electronic contrast ͑offset GaAs valence band and QD hole state͒.…”
Section: Characterization Of Quantum Dotsmentioning
confidence: 99%
“…The final shape and composition profile are selected from such a set of guessed inputs by fitting the measured outward relation of the QD on the cleaved surface. 11,13 Thus, a single XSTM measurement often produces a few final SSC models, all consistent with the same measured QD relaxation profile. Second, given that the application of the XSTM procedure to million-atom QDs reveals, in the final analysis, only global structural features, i.e., SSCs, one wonders to what extent is this restricted/specific structural information sufficient to determine other physical properties, such as detailed spectra.…”
Section: Introductionmentioning
confidence: 99%
See 1 more Smart Citation
“…In the past we have used cross-sectional scanning tunneling microscopy ͑X-STM͒ to image the structural properties of individual QDs. 7 The same technique was used by us to analyze individual Mn impurities in detail 8 and thus X-STM is an ideal tool to study the incorporation of Mn in InAs QDs. Such analysis should be able to resolve several controversies that exist in this young field of the growth of magnetic III/V QDs.…”
mentioning
confidence: 99%