Elimination of phosphorus vaporizing from molten silicon at finite reduced pressure

Zheng, Songsheng; Safarian, Jafar; Seok, Seong-ho; Kim, Sung-Wook; Tangstad, Merete; Luo, Xuetao

doi:10.1016/s1003-6326(11)60768-1

Cited by 24 publications

(7 citation statements)

References 18 publications

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“…Figure 7 indicates that Eqs. [2] and [4] overestimate the vapor pressure of P by about ten times. This could be due to the inaccuracy of the Gibbs energy for reactions (i) and (ii); hence, Eqs.…”

Section: A Liquid-vapor Equilibrium For Si-p Systemmentioning

confidence: 96%

“…Zaitsev et al [63] criticized the relationship introduced by Miki et al [62] for being misprocessed and showed correct processing of the data produced by Miki et Figure 7 shows the equilibrium vapor pressure of phosphorus-containing species at 1442 °C ± 2 °C calculated according to Eqs. [2] through [4] and with FactSageÒ (version 7.3 and SGTE database). The experimental data from this research obtained by KEMS are also shown in Figure 7.…”

Section: A Liquid-vapor Equilibrium For Si-p Systemmentioning

confidence: 99%

“…SILICON refining for production of Si solar cells is a hot topic attracting many researchers in recent years. The solar-grade silicon (SoG-Si) requires a minimum purity of 99.9999 pct (6N) [1][2][3][4][5] ; hence, dedicated refining methods are required for removing these impurities. One of the most important impurities that is difficult to remove from metallurgical Si is phosphorus (with tens of ppmw).…”

Section: Introductionmentioning

confidence: 99%

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On the Phosphorus Evaporation from Liquid Silicon by Knudsen Effusion Mass Spectrometry

Hoseinpur

Sergeev

Müller

et al. 2022

Metall Mater Trans B

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Silicon refining for solar applications is intensively on demand, and removal of phosphorus from Si is one of the most challenging steps. Evaporation of P from liquid Si in a vacuum refining process is the most efficient method for P removal from Si, and this research deals with the insight mechanisms of P evaporation from liquid Si. In this research, the gaseous species evaporating from the dilute liquid solutions of phosphorus in silicon were studied experimentally, and it was shown that phosphorus evaporates in the form of P, P2, P4, P3, SiP, Si2P, Si3P, and SiP2 at elevated temperatures. Except P and P2, the other molecules were detected experimentally for the first time, and Si3P was detected as a new compound in the gas phase. Knudsen effusion mass spectrometry technique was applied to characterize the evaporation of phosphorus from liquid Si samples containing 100, 1250, and 3000 ppmw phosphorus. The evaporation of phosphorus from liquid Si was studied by isothermal and polythermal experiments, up to 1840 °C. The vapor pressures of various P-containing molecules (P, P2, P4, SiP, Si2P) at 1442 °C were measured as a function of phosphorus fraction in liquid silicon. Results indicated that a major part of the phosphorus evaporates in the form of silicon phosphides and P4, especially when the sample temperature exceeds 1750 °C. When initial phosphorus was 100 ppmw, about 71 pct of phosphorus evaporation was by means of silicon phosphides and P4. The mechanisms of phosphorus evaporation from liquid Si are proposed, which depend on the melt composition and temperature. It occurs through phosphorus species evaporation independently or via the decomposition of transient silicon phosphides at the surface or through the direct evaporation of silicon phosphides at the melt surface.

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Section: A Liquid-vapor Equilibrium For Si-p Systemmentioning

confidence: 96%

Section: A Liquid-vapor Equilibrium For Si-p Systemmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

See 1 more Smart Citation

On the Phosphorus Evaporation from Liquid Silicon by Knudsen Effusion Mass Spectrometry

Hoseinpur

Sergeev

Müller

et al. 2022

Metall Mater Trans B

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“…Another important factor is pressure. According to [12], the phosphorus mass transfer coefficient on the surface of the silicon melt strongly depends on pressure. Above 1 Pa pressure, the transfer rate of phosphorus declines very rapidly.…”

Section: Potential For Em Technologies In Silicon Refinementmentioning

confidence: 99%

Numerical Modeling of Surface Waves Generated by Low Frequency Electromagnetic Field for Silicon Refinement Process

Geža¹,

Venčels²,

Zāģeris³

et al. 2017

Proceedings of the VIII International Scientific Colloquium "Modelling for Materials Processing"

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One of the most perspective methods to produce SoG-Si is refinement via metallurgical route. The most critical part of this route is refinement from boron and phosphorus. Therefore, a new approach could address this problem. We propose an approach of creating surface waves on silicon melt's surface in order to enlarge its area and accelerate removal of boron via chemical reactions and evaporation of phosphorus. A two dimensional numerical model is created which includes coupling of electromagnetic and fluid dynamic simulations with free surface dynamics. First results show behaviour similar to experimental results from literature.

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“…Yuge et al [8] trataram silício líquido sob vácuo de 8,0.10 -3 a 3,6.10 -2 Pa entre 1.722K a 1.915K (1.449°C a 1.642°C), e sob vácuo de 4 a 190 Pa entre 1.733K a 1.823K (1.460°C a 1.550°C), obtendo a seguinte expressão para a variação do coeficiente de transferência de massa de fósforo (k P ) com a temperatura: ln k P = -2,29 -15.600T -1 (m/s). Zheng et al [9] obtiveram uma redução de 460 ppm para 10 ppm sob vácuo de 0,6 Pa a 0,8 Pa e 1.873K (1.600°C) durante 3.600 s (1 hora) e de 15 ppm para 0,08 ppm sob vácuo de 0,035 Pa a 0,1 Pa e temperatura entre 1.773K e 1.873K (1.500°C e 1.600°C) em 7.200 s (2 horas) de tratamento. Safarian e Tangstad [10] conseguiram refino de 16,66 ppm para 1,5 ppm em 18.000 s (5 horas).…”

Section: Introductionunclassified

Refino De Silício Por Tratamento a Vácuo

Lotto

Ferreira-Neto

Mourão

2014

TMM

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Este trabalho visa investigar a remoção a vácuo de fósforo do silício grau metalúrgico (SiGM) (98,5% a 99% de Si). Foram realizados experimentos de fusão em forno de indução a vácuo, variando parâmetros como temperatura, tempo e relação área exposta ao vácuo / volume de silício. Os resultados de análise química foram obtidos por plasma acoplado indutivamente (ICP) e avaliados com base em aspectos termodinâmicos e cinéticos da reação de vaporização do fósforo no silício. Obteve-se refino de 33 para cerca de 1,5 ppm de P em três horas, concluindo-se que a etapa de evaporação é a etapa controladora do processo para os parâmetros de temperatura, pressão e agitação utilizados, e que o refino por este processo é tecnicamente viável.

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Elimination of phosphorus vaporizing from molten silicon at finite reduced pressure

Cited by 24 publications

References 18 publications

On the Phosphorus Evaporation from Liquid Silicon by Knudsen Effusion Mass Spectrometry

On the Phosphorus Evaporation from Liquid Silicon by Knudsen Effusion Mass Spectrometry

Numerical Modeling of Surface Waves Generated by Low Frequency Electromagnetic Field for Silicon Refinement Process

Refino De Silício Por Tratamento a Vácuo

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