Elimination of light‐induced degradation with gallium‐doped multicrystalline silicon wafers

Dhamrin, M.; Hashigami, H.; Saitoh, Tadashi

doi:10.1002/pip.482

Cited by 16 publications

(4 citation statements)

References 6 publications

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“…Many groups have performed studies that demonstrate the potential for using Ga, instead of boron, as a dopant in p-type Cz Si wafers to eliminate LID. 22 In our experimental results, LID was observed to affect longwavelength quantum efficiency, despite using Ga-doped Si wafers, as Fig. 1 shows.…”

Section: Resultssupporting

confidence: 53%

Minimizing Light-Induced Degradation of the Al₂O₃Rear Passivation Layer for Highly Efficient PERC Solar Cells

Park

Bae

et al. 2018

ECS J. Solid State Sci. Technol.

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Commercializing a highly efficient passivated-emitter-and-rear-cell solar cell requires high passivation quality and stability of the cell's Al 2 O 3 layer. This paper reports on light-induced degradation (LID) of the Al 2 O 3 layer and the effects of post-annealing temperatures after light soaking on the passivation quality. To understand the LID phenomenon of the Al 2 O 3 passivation layer, we used a Ga-doped Si wafer that prevented boron-oxygen LID effects. The fabrication process was carried out on large-area (156 × 156 mm 2 ), commercially available, (100)-oriented Ga-doped Czochralski(Cz) Si wafers in the pilot line. Before and after light soaking, the effective lifetime was measured using Sinton's quasi-steady-state photoconductance as a function of annealing temperature. Chemical binding structures near the interface of the Al 2 O 3 film and Si wafer were investigated using X-ray photoelectron spectroscopy (XPS). The passivation quality and light-induced degradation showed the best performance at an annealing temperature of 600 • C. Analysis of XPS data revealed that the chemical binding structures at the interface of the Al 2 O 3 layer and Si wafer were stabilized by optimizing the annealing condition of the Al 2 O 3 layer. By optimizing an industrially feasible Al 2 O 3 passivation process, an efficiency of 20.1% was achieved on large-area, commercial-grade Cz c-Si wafers.

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Section: Resultssupporting

confidence: 53%

Minimizing Light-Induced Degradation of the Al₂O₃Rear Passivation Layer for Highly Efficient PERC Solar Cells

Park

Bae

et al. 2018

ECS J. Solid State Sci. Technol.

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“… Avoiding the use of 1-2 Ω-cm B-doped CZ silicon (use high resistivity) [71,82]  Substituting B with Ga [82][83][84] although Cu and Ga resulted in LID [85]  Substituting B with In was proposed [86]. Recently, In-doped Si was shown to exhibit LID as well [87]  Reducing O content (e.g.…”

Section: Light Induced Degradationmentioning

confidence: 99%

Manufacturing metrology for c-Si photovoltaic module reliability and durability, Part I: Feedstock, crystallization and wafering

Seigneur

Mohajeri

Brooker

et al. 2016

Renewable and Sustainable Energy Reviews

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This article is the first in a three-part series of manufacturing metrology for c-Si photovoltaic (PV) module reliability and durability. Here in Part 1 we focus on the three primary process steps for making silicon substrates for PV cells: (1) feedstock production; (2) ingot and brick production; and (3) wafer production. Each of these steps can affect the final reliability/durability of PV modules in the field with manufacturing metrology potentially playing a significant role. This article provides a comprehensive overview of historical and current processes in each of these three steps, followed by a discussion of associated reliability challenges and metrology strategies that can be employed for increased reliability and durability in resultant modules. Gaps in the current state of understanding in connective metrology data during processing to reliability/durability in the field are then identified along with suggested improvements that should be considered by the PV community.

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“…Aluminium is unlikely to be a viable bulk dopant, as aluminium‐oxygen complexes exhibit strong recombination activity . Gallium doped silicon exhibits stable high lifetimes upon illumination so could be a viable alternative. Indium doped silicon has been studied since the 1950s .…”

Section: Introductionmentioning

confidence: 99%

Minority carrier lifetime in indium doped silicon for photovoltaics

Murphy

Pointon

Grant

et al. 2019

Progress in Photovoltaics

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For photovoltaics, switching the p‐type dopant in silicon wafers from boron to indium may be advantageous as boron plays an important role in the light‐induced degradation mechanism. With the continuous Czochralski crystal growth process it is now possible to produce indium doped silicon substrates with the required doping levels for solar cells. This study aims to understand factors controlling the minority carrier lifetime in such substrates with a view to enabling the quantification of the possible benefits of indium doped material. Experiments are performed using temperature‐dependent Hall effect and injection‐dependent carrier lifetime measurements. The recombination rate is found to vary linearly with the concentration of un‐ionized indium which exists in the sample at room temperature due to indium's relatively deep acceptor level at 0.15 eV from the valence band. Lifetime in indium doped silicon is also shown to degrade rapidly under illumination, but to a level substantially higher than in equivalent boron doped silicon samples. A window of opportunity exists in which the minority carrier lifetime in degraded indium doped silicon is higher than the equivalent boron doped silicon, indicating it may be suitable as the base material for front contact photovoltaic cells.

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Elimination of light‐induced degradation with gallium‐doped multicrystalline silicon wafers

Cited by 16 publications

References 6 publications

Minimizing Light-Induced Degradation of the Al₂O₃Rear Passivation Layer for Highly Efficient PERC Solar Cells

Minimizing Light-Induced Degradation of the Al₂O₃Rear Passivation Layer for Highly Efficient PERC Solar Cells

Manufacturing metrology for c-Si photovoltaic module reliability and durability, Part I: Feedstock, crystallization and wafering

Minority carrier lifetime in indium doped silicon for photovoltaics

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Elimination of light‐induced degradation with gallium‐doped multicrystalline silicon wafers

Cited by 16 publications

References 6 publications

Minimizing Light-Induced Degradation of the Al2O3Rear Passivation Layer for Highly Efficient PERC Solar Cells

Minimizing Light-Induced Degradation of the Al2O3Rear Passivation Layer for Highly Efficient PERC Solar Cells

Manufacturing metrology for c-Si photovoltaic module reliability and durability, Part I: Feedstock, crystallization and wafering

Minority carrier lifetime in indium doped silicon for photovoltaics

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Product

Resources

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Minimizing Light-Induced Degradation of the Al₂O₃Rear Passivation Layer for Highly Efficient PERC Solar Cells

Minimizing Light-Induced Degradation of the Al₂O₃Rear Passivation Layer for Highly Efficient PERC Solar Cells