Elektronische Halbleiter

Spenke, Eberhard

doi:10.1007/978-3-662-01338-0

Cited by 68 publications

(8 citation statements)

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“…The measured value of level separation of ,155 meV at RT agrees reasonably well with the values predicted by the theoretical calculations for SiNCs 32,34 (120 meV) and with those observed for CdZnSe/ZnSe NCs 13 (164 meV). With decreasing temperature, the measured spacing exhibits a slight decrease, as shown in Figures 4c and 5a, as expected for level separation in a NC, in contrast 35 to phonons (see Supplementary Section S4).…”

Section: Trionic Structuresupporting

confidence: 75%

“…The observed peak spacing of the trionic structure and its temperature dependence (Figures 2a and 5a) are indicative of the energetic distance of quantized hole levels in SiNCs 34,35 . The appearance of a low-energy replica spaced by quantization energy with decreasing amplitude toward lower emission energies can be naturally explained by the shake-up process within the radiative recombination of a positively charged trion, as sketched in Figure 1c (because of the decreasing amplitude, this process cannot be assigned to hot-carrier recombination).…”

Section: Summary and Discussionmentioning

confidence: 94%

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Bright trions in direct-bandgap silicon nanocrystals revealed by low-temperature single-nanocrystal spectroscopy

2015

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Strain-engineered silicon nanocrystals (SiNCs) have recently been shown to possess direct bandgap. Here, we report the observation of a rich structure in the single-nanocrystal photoluminescence spectra of strain-engineered direct-bandgap SiNCs in the temperature range of 9-300 K. The relationship between individual types of spectra is discussed, and the numerical modeling of spectral diffusion of the experimentally acquired spectra reveals a common origin for most types. The intrinsic spectral shape is shown to be a structure that contains three peaks, approximately 150 meV apart, each of which possesses a Si phonon substructure. Narrow spectral lines, reaching f1 meV at 20 K, are detected. The observed temperature dependence of the spectral structure can be assigned to the radiative recombination of positively charged trions, in contrast to several previous reports linking a very similar shape to phonons in the surface capping layers. Our result serves as strong additional support for the direct-bandgap nature of the investigated SiNCs.

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Section: Trionic Structuresupporting

confidence: 75%

Section: Summary and Discussionmentioning

confidence: 94%

Bright trions in direct-bandgap silicon nanocrystals revealed by low-temperature single-nanocrystal spectroscopy

2015

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“…Reliabfe values of noedge for nondoped ZnS crystals could not be obtained by measurements of the currentvoltage characteristics. Taking the same value as found for Cu-doped samples [21] we concluded that in the fundamental lattice absorption region the generated non-equilibrium hole concentrations in non-intentionally doped crystals exceed the concentrations in Cu-doped crystals, because the photoconductivities measured in the first case are always larger. As certainly the condition %edge zns 5 5 w a s e Z n s : C u is valid, the hole lifetimesa) of non-doped samples are t , 2 10-8 to 10-lo s and the diffusion lengths are between 5 x 10-6 and 5 x 10-5 cm.…”

Section: Discussionsupporting

confidence: 62%

Minority carriers in zinc sulphide

Friedrich

Sysoev

Thiessen

1968

Physica Status Solidi (b)

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Photovoltage and photoconductivity measurements were made in non-intentionally doped and diffiision-doped XnS rrynt.nla grown frnm melt. tinder high prenniire. The photovoltage measurements allow the excitation of minority carriers to be detected. Whereas in the non-intentionally doped samples minority carriers are generated only by irradiation in the fundamental lattice absorption range, in Cu-doped crystals an excitation of holes is observed down to 2.5 eV. The hole lifeti111~8 a t fundamental lattice excitation have values of 10-10to 10-12 s in Cu-doped samples, in the undoped sampler they are greater than 10-lo 8. The photovoltage spectra are similar to the excitation spectra of photoluminescence.

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“…germanium with antimony) gives rise to a set of donor levels whose energy is about 0,Ol eV below the conduction band. donors and electrons are considered as point charges in a homogeneous medium with the bound states [3,41 Es = -( e % n * / 2~~~4~) In low or moderately doped semiconductors conduction occurs mainly by excitation (ionization) from the donor states into the conduction band and only a sniall part of the conduction is due to hopping processes in the donor band itself.…”

Section: Introductionmentioning

confidence: 99%

Theory of the Ionization Equilibrium in Dense Semiconductor Plasmas

Bartsch

Ébeling

1975

Contrib Plasma Phys

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The semiconductor is considered as a plasma of electrons, donors and occupied acceptors in n homogeneous medium interacting by COULOMB'S law. The mass action law for the ionization equilibrium of electmns and donors is formulated taking into account the interaction of the charges. The lowering of the ionization energy is calculated using the quantum statistical method of binary density matrices. By compnrision with the experimental results of DEBYE and CONWELL for the lowering of the ionization energy good agreement between theory and experiment was found. The limit of stability of the semiconductor state is investigated.

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Elektronische Halbleiter

Cited by 68 publications

References 0 publications

Bright trions in direct-bandgap silicon nanocrystals revealed by low-temperature single-nanocrystal spectroscopy

Bright trions in direct-bandgap silicon nanocrystals revealed by low-temperature single-nanocrystal spectroscopy

Minority carriers in zinc sulphide

Theory of the Ionization Equilibrium in Dense Semiconductor Plasmas

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