1909
DOI: 10.1002/zaac.19090640109
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Elektrische Leitfähigkeit und Fließdruck isomorpher Gemische des Bleis mit Indium und Thallium

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Cited by 27 publications
(1 citation statement)
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“…On tile basis of the foregoing results a tentative general postulate can be advanced that, at low temperatures, lattice defects--substitutional or vacancy --are strengthening factors, while at temperatures substantially above 0.5 of the melting point, lattice defects are weakening factors. Of those cases reported in the literature, Cu~Au (18), CuAu (18), MgCd (19), and PbT1 (20,21) all show minima at stoichiometry and all were tested at temperatures below about 0.6 T~,,. s Two cases have been reported which show maxima near the stoichiometric composition Bi~TI~ (22) and TiO (23).…”
Section: Discussionmentioning
confidence: 99%
“…On tile basis of the foregoing results a tentative general postulate can be advanced that, at low temperatures, lattice defects--substitutional or vacancy --are strengthening factors, while at temperatures substantially above 0.5 of the melting point, lattice defects are weakening factors. Of those cases reported in the literature, Cu~Au (18), CuAu (18), MgCd (19), and PbT1 (20,21) all show minima at stoichiometry and all were tested at temperatures below about 0.6 T~,,. s Two cases have been reported which show maxima near the stoichiometric composition Bi~TI~ (22) and TiO (23).…”
Section: Discussionmentioning
confidence: 99%