Electrothermal Annealing (ETA) Method to Enhance the Electrical Performance of Amorphous-Oxide-Semiconductor (AOS) Thin-Film Transistors (TFTs)

Kim, Choong‐Ki; Kim, Eungtaek; Lee, Myung Keun; Park, Jun-Young; Seol, Myeong‐Lok; Bae, Hagyoul; Bang, Tewook; Jeon, Seungwon; Jun, Sungwoo; Park, Sang-Hee K.; Choi, Kyung Cheol; Choi, Yang‐Kyu

doi:10.1021/acsami.6b06377

Cited by 15 publications

(9 citation statements)

References 38 publications

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“…Thermal annealing at the postfabrication stage is common in the utilization of electronic materials for practical device applications. − Furthermore, it is widely accepted that thermal annealing strongly influences the microstructure and properties of oxide-based electronic materials. − In fact, a great number of efforts were directed in the literature toward understanding the effect of annealing atmosphere, such as nitrogen or oxygen, and annealing temperature on the physical, mechanical, chemical, and electronic properties of Ga 2 O 3 films. − For instance, semiconductor-to-insulating electronic transformation was reported for Si-doped β-Ga 2 O 3 films when annealing was performed at 800–850 °C in O 2 atmosphere . In the majority of previous studies, it was reported that the oxygen vacancy concentration and carrier concentration decrease after thermal annealing of β-Ga 2 O 3 single crystals .…”

Section: Introductionmentioning

confidence: 99%

Crystal Growth and Structure–Property Optimization of Thermally Annealed Nanocrystalline Ga₂O₃ Films

Makeswaran

Battu

Deemer

et al. 2020

Crystal Growth & Design

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The effects of thermal annealing on the crystal chemistry, crystallization process, index of refraction, mechanical properties, and electrical characteristics of nanocrystalline Ga 2 O 3 films was evaluated. Ga 2 O 3 thin films were sputtered onto Si(100) substrates at 500 °C utilizing a Ga 2 O 3 ceramic target, while postdeposition thermal annealing was performed between a range of 500−900 °C. Both structural quality and packing density of the Ga 2 O 3 films was improved by the thermal annealing as indicated by the X-ray diffraction and ellipsometry studies. The atomic force microscopy analysis indicates that the annealing temperature has a dramatic effect on surface roughness, especially when the annealing temperature exceeds 700 °C. Corroborating with structure and morphology changes, the high values of hardness and elastic modulus are noted for Ga 2 O 3 films annealed at higher temperatures (800−900 °C). Index of refraction (n) and extinction coefficient (k) results, and their dispersion profiles indicate that the annealing temperature strongly influences the optical properties. The refractive index values vary in the range of 1.78−1.84 (632 nm) because of the gradual improvement of structural quality, texturing, and packing density upon thermal annealing. A correlation between annealing temperature, optical characteristics, and electrical characteristics in Ga 2 O 3 films is established.

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Section: Introductionmentioning

confidence: 99%

Crystal Growth and Structure–Property Optimization of Thermally Annealed Nanocrystalline Ga₂O₃ Films

Makeswaran

Battu

Deemer

et al. 2020

Crystal Growth & Design

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“…Besides, the O defects generated from In-O bonds plays a role as shallow donors near the conduction band edge and influences on the bias stress instability caused by electron trapping. 31,32 For vd-IGZO film, In 2 O 3 was in direct contact with air when post-annealing, so we believe that the ambient annealing can encourage reconnection of metal and oxygen elements as In-O bonds and suppress O v sufficiently. To prove this point, the surface XPS O 1s spectrums of the vd-IGZO film and con-IGZO film were performed, as shown in Figure 8b.…”

Section: Ss = DV Gs D (Log I Ds )mentioning

confidence: 97%

Low-Temperature Fabrication of Solution-Processed InGaZnO Thin-Film Transistors by Three-Layer Gradient Diffusion

Chen¹,

Li²,

Cheng³

et al. 2019

ECS J. Solid State Sci. Technol.

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In this study, we report a novel vertical diffusion method for fabricating solution-processed quaternary In-Ga-Zn-O (IGZO) (defined as vd-IGZO) thin-film transistors (TFTs). Compared with conventional IGZO (defined as con-IGZO) TFT annealed at 380°C, vd-IGZO thin film is to spin coat Ga 2 O 3 , ZnO and In 2 O 3 binary oxide precursors consecutively and then anneal at 250°C. Finally, the IGZO film with a vertically gradient Ga, Zn, In diffusion is obtained and used as the channel layer of TFTs. The results showed that the novel method lead to an improvement in charge carrier mobility and an improvement in the on-off current ratio of IGZO TFTs along with an improved stability. Compared with those for con-IGZO TFTs, the mobility for vd-IGZO TFT reaches 2.81cm 2 V −1 s −1 from 0.88cm 2 V −1 s −1 , the threshold voltage(V th ) changes from 3.7V to 0.3V, the sub-threshold swing (S.S) decreases from 0.51V/dec to 0.35V/dec, and the on-current/off-current (I on /I off ) increases from 2.1 × 10 6 to 2.3 × 10 7 . Besides, the positive bias stress (PBS), negative bias stress (NBS) and environmental stability are all improved to some extent. Hence this novel vertical diffusion method shows great potential to be applicable in the fabrication of flexible TFT.

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“…As a representative active material for the oxide TFT, amorphous In–Ga–Zn–O (a-IGZO) has shown high promise, providing the following advantages over other channel materials such as amorphous Si and low-temperature polycrystalline silicon (LTPS). First, the wide band gap of a-IGZO enables fully transparent transistors in the visible light region to be realized. − Moreover, oxide TFTs that consist of oxide semiconductors as a channel layer show excellent mobility, over 10 cm 2 /(V s). With respect to processing, oxide semiconductors can be deposited uniformly over large areas due to their ease of fabrication rather than others such as LTPS using laser.…”

Section: Introductionmentioning

confidence: 99%

Low-Leakage Fiber-Based Field-Effect Transistors with an Al₂O₃–MgO Nanolaminate as Gate Insulator

Park

Kwon

et al. 2019

ACS Appl. Electron. Mater.

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The advent of the Internet of Things (IoT) has triggered extensive demand for electronic devices with various form factors, such as wearable electronic devices. In particular, electronic textiles, which integrate electronic functions into human-friendly fabrics, have been studied at both the fiber and fabric level. Because the utilization of wearable electronic devices such as sensors, displays, and so on is basically limited by the energy capacity of the wearable devices, developing highly efficient power generating and storage devices in wearable forms has been considered very important at a power consumption point of view. Likewise, switching devices are also required to cut off electric power to unused electronic parts for efficient power management. However, the high leakage current in the switching devices reported has so far precluded the practical use of wearable applications. In this work, we demonstrate fiber-based TFTs with an Al 2 O 3 −MgO nanolaminate layer as gate insulator. The developed fiber-based TFTs exhibited an excellent on/off ratio over 108 and good mobility of over 3 cm 2 /(V s). From a power consumption point of view, more importantly, the fiber-based TFTs showed leakage and off current of less than 10 −9 and 10 −13 A, respectively, which is the lowest value ever in fiber-based TFTs so far and as low as the flat devices. These results are of great importance for validating their practical use especially in wearable electronics where wearable devices generally possess their limited battery capacity. In addition, the low-temperature vacuum deposition method used in this work also allows the fiber-based TFTs to be produced in the same manner as conventional flat TFTs.

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Electrothermal Annealing (ETA) Method to Enhance the Electrical Performance of Amorphous-Oxide-Semiconductor (AOS) Thin-Film Transistors (TFTs)

Cited by 15 publications

References 38 publications

Crystal Growth and Structure–Property Optimization of Thermally Annealed Nanocrystalline Ga₂O₃ Films

Crystal Growth and Structure–Property Optimization of Thermally Annealed Nanocrystalline Ga₂O₃ Films

Low-Temperature Fabrication of Solution-Processed InGaZnO Thin-Film Transistors by Three-Layer Gradient Diffusion

Low-Leakage Fiber-Based Field-Effect Transistors with an Al₂O₃–MgO Nanolaminate as Gate Insulator

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Electrothermal Annealing (ETA) Method to Enhance the Electrical Performance of Amorphous-Oxide-Semiconductor (AOS) Thin-Film Transistors (TFTs)

Cited by 15 publications

References 38 publications

Crystal Growth and Structure–Property Optimization of Thermally Annealed Nanocrystalline Ga2O3 Films

Crystal Growth and Structure–Property Optimization of Thermally Annealed Nanocrystalline Ga2O3 Films

Low-Temperature Fabrication of Solution-Processed InGaZnO Thin-Film Transistors by Three-Layer Gradient Diffusion

Low-Leakage Fiber-Based Field-Effect Transistors with an Al2O3–MgO Nanolaminate as Gate Insulator

Contact Info

Product

Resources

About

Crystal Growth and Structure–Property Optimization of Thermally Annealed Nanocrystalline Ga₂O₃ Films

Crystal Growth and Structure–Property Optimization of Thermally Annealed Nanocrystalline Ga₂O₃ Films

Low-Leakage Fiber-Based Field-Effect Transistors with an Al₂O₃–MgO Nanolaminate as Gate Insulator