Electrothermal analyses in Cu/ZrO2/Pt CBRAM memory using a dual-phase-lag model

Jemii, Elassaad; Belkhiria, Maissa; Aouaini, Fatma; Echouchene, Fraj; Alyousef, Haifa A.

doi:10.1007/s10825-022-01907-8

Cited by 6 publications

(2 citation statements)

References 39 publications

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“…Previously, we analyzed the self-heating effect in GAAFETs [50] using the finite element method. The finite element discretization has been used to tackle the effect of Joule heating in a conductive-bridge random-access memory (CBRAM) for the single-phase-lag heat conduction model [51].…”

Section: Introductionmentioning

confidence: 99%

Investigation of Trap Density Effect in Gate-All-Around Field Effect Transistors Using the Finite Element Method

Belkhiria,

Aouaini,

A. Aldaghfag

et al. 2023

Electronics

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Trap density refers to the density of electronic trap states within dielectric materials that can capture and release charge carriers (electrons or holes) in a semiconductor channel, affecting the transistor’s performance. This study aims to investigate the influence of trap density on the electrothermal behavior of nanowire gate-all-around GAAFET devices. The numerical solution of Poisson’s equations and continuity equations, coupled with the heat conduction model, has been used to predict the temperature inside the GAAFET device. The finite element method has been used to discretize the semiconductor equations. Investigations have been carried out on a number of physical and geometric parameters, such as oxide thickness, nanowire radius, and gate length. Their effects on output characteristics and device temperature have been discussed. A thinner oxide thickness, lower device radius, and longer channel length led to a higher current flow. Results also reveal that high trap densities can have significant impacts on the degradation of electronic devices, particularly in the context of semiconductor devices like transistors.

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Section: Introductionmentioning

confidence: 99%

Investigation of Trap Density Effect in Gate-All-Around Field Effect Transistors Using the Finite Element Method

Belkhiria,

Aouaini,

A. Aldaghfag

et al. 2023

Electronics

Self Cite

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“…This is due to the low resistance residue conductive bridge left in the HRS. The common active electrodes used in literature are Ag [33][34][35] and Cu [36][37][38] electrodes, and the dielectric layer can be made from oxides [39][40][41], chalcogenide [42,43] and organic materials [44,45]. Usually, CBRAM has lower set and reset voltages than the VCM counterpart, which reduces the operating energy in switching the resistance states [46,47].…”

Section: Resistive Random Access Memory (Rram)mentioning

confidence: 99%

Frequency-dependent redox-based 1S1R synapse with a short-term plasticity TIO2-based exponential selector

Chee

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Short-term plasticity plays a crucial role in the hardware implementation of artificial neural networks (ANN) as it enables temporal information processing capability. However, the short-term plasticity feature is rather challenging to reproduce from a single non-volatile resistive random-access memory (RRAM) component due to its requirement for a certain degree of volatility. Nonetheless, if the selector in one selector-one RRAM (1S1R) integration demonstrates short-term plasticity, it enables the 1S1R device to perform temporal information processing even in the absence of short-term plasticity in RRAM.In this thesis, an exponential selector of Pt/TiO2/Pt structure is introduced to demonstrate the short-term plasticity feature, which is shown to be dependent on the electrodeoxide interface through plasma treatment, and a microscopic model is proposed to explain the observed feature. Thereafter, the short-term plasticity and nonlinearity of the exponential selector are tuned by modulating the oxygen vacancy defects in the TiO2 layer. As the concentration of oxygen vacancy defects increases, the dominant conduction mechanism of the exponential selector transitions from Schottky emission to Poole-Frenkel emission.Additionally, a 1S1R synaptic device is developed based on the Pt/TiO2/Pt exponential selector and a Pt/HfO2/Ti RRAM structure. The Pt/TiO2/Pt selector with short-term plasticity is integrated not only to suppress the sneak current but also to enable the temporal information processing feature, while the Pt/HfO2/Ti RRAM structure enables the long-term memory capability of the 1S1R synapse. Frequency-dependent multilevel switching is experimentally demonstrated in the 1S1R synaptic device, exhibiting the capability of temporal information processing. Furthermore, a 2x2 crossbar array based on the developed 1S1R device is characterised under the worst-case scenario, demonstrating the potential of using this 1S1R synaptic device in the hardware implementation of ANN.

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Ultracompact Electrochemical Metallization–Based Tunable Filter with Plasmonic Waveguide

Chen

et al. 2023

Plasmonics

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Electrothermal analyses in Cu/ZrO2/Pt CBRAM memory using a dual-phase-lag model

Cited by 6 publications

References 39 publications

Investigation of Trap Density Effect in Gate-All-Around Field Effect Transistors Using the Finite Element Method

Investigation of Trap Density Effect in Gate-All-Around Field Effect Transistors Using the Finite Element Method

Frequency-dependent redox-based 1S1R synapse with a short-term plasticity TIO2-based exponential selector

Ultracompact Electrochemical Metallization–Based Tunable Filter with Plasmonic Waveguide

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