Electrostrictive Tunable Capacitors and High-Performance 2D Crystal Transistors for Energy-Efficient Applications

Jana, Raj K.; Snider, Gregory L.

doi:10.1109/led.2016.2522099

Cited by 4 publications

(1 citation statement)

References 31 publications

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“…Such selective pressure could be actively provided by piezoelectric or electro/magnetostrictive actuators. Recent studies have suggested that TMD-based devices operating by piezoelectric gate barriers to be feasible, and could obtain a sub-60 mV/dec subthreshold swing (SS) [61,62]. In energy harvesting devices or pressure/ strain sensor applications, external mechanical stress could be passively delivered to a particular region of the monolayer [7,63].…”

Section: Resultsmentioning

confidence: 99%

Towards band structure and band offset engineering of monolayer Mo _{(1−
x
)} W _{(
x
)} S ₂ via Strain

et al. 2017

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Semiconducting transition metal dichalcogenides (TMDs) demonstrate a wide range of optoelectronic properties due to their diverse elemental compositions, and are promising candidates for next-generation optoelectronics and energy harvesting devices. However, effective band offset engineering is required to implement practical structures with desirable functionalities. Here, we explore the pressure-induced band structure evolution of monolayer WS2 and Mo0.5W0.5S2 using hydrostatic compressive strain applied in a diamond anvil cell (DAC) apparatus and theoretical calculations, in order to study the modulation of band structure and explore the possibility of band alignment engineering through different compositions. Higher W composition in Mo(1−x)W(x)S2 contributes to a greater pressure-sensitivity of direct band gap opening, with a maximum value of 54 meV GPa−1 in WS2. Interestingly, while the conduction band minima (CBMs) remains largely unchanged after the rapid gap increase, valence band maxima (VBMs) significantly rise above the initial values. It is suggested that the pressure- and composition-engineering could introduce a wide variety of band alignments including type I, type II, and type III heterojunctions, and allow to construct precise structures with desirable functionalities. No structural transition is observed during the pressure experiments, implying the pressure could provide selective modulation of band offset.

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Section: Resultsmentioning

confidence: 99%

Towards band structure and band offset engineering of monolayer Mo _{(1−
x
)} W _{(
x
)} S ₂ via Strain

et al. 2017

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Optical and photodetector properties of stripe-like InS crystal

Chen

2016

RSC Adv.

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Bio-inspired synaptic behavior simulation in thin-film transistors based on molybdenum disulfide

Wang,

Yuan,

Meng

et al. 2023

The Journal of Chemical Physics

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Synaptic behavior simulation in transistors based on MoS2 has been reported. MoS2 was utilized as the active layer to prepare ambipolar thin-film transistors. The excitatory postsynaptic current phenomenon was simulated, observing a gradual voltage decay following the removal of applied pulses, ultimately resulting in a response current slightly higher than the initial current. Subsequently, ±5 V voltages were separately applied for ten consecutive pulse voltage tests, revealing short-term potentiation and short-term depression behaviors. After 92 consecutive positive pulses, the device current transitioned from an initial value of 0.14 to 28.3 mA. Similarly, following 88 consecutive negative pulses, the device current changed, indicating long-term potentiation and long-term depression behaviors. We also employed a pair of continuous triangular wave pulses to evaluate paired-pulse facilitation behavior, observing that the response current of the second stimulus pulse was ∼1.2× greater than that of the first stimulus pulse. The advantages and prospects of using MoS2 as a material for thin-film transistors were thoroughly displayed.

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Electrostrictive Tunable Capacitors and High-Performance 2D Crystal Transistors for Energy-Efficient Applications

Cited by 4 publications

References 31 publications

Towards band structure and band offset engineering of monolayer Mo _{(1−
x
)} W _{(
x
)} S ₂ via Strain

Towards band structure and band offset engineering of monolayer Mo _{(1−
x
)} W _{(
x
)} S ₂ via Strain

Optical and photodetector properties of stripe-like InS crystal

Bio-inspired synaptic behavior simulation in thin-film transistors based on molybdenum disulfide

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Electrostrictive Tunable Capacitors and High-Performance 2D Crystal Transistors for Energy-Efficient Applications

Cited by 4 publications

References 31 publications

Towards band structure and band offset engineering of monolayer Mo (1− x ) W ( x ) S 2 via Strain

Towards band structure and band offset engineering of monolayer Mo (1− x ) W ( x ) S 2 via Strain

Optical and photodetector properties of stripe-like InS crystal

Bio-inspired synaptic behavior simulation in thin-film transistors based on molybdenum disulfide

Contact Info

Product

Resources

About

Towards band structure and band offset engineering of monolayer Mo _{(1−
x
)} W _{(
x
)} S ₂ via Strain

Towards band structure and band offset engineering of monolayer Mo _{(1−
x
)} W _{(
x
)} S ₂ via Strain