2011
DOI: 10.1103/physrevb.83.165308
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Electrostatically trapping indirect excitons in coupled InxGa1xAs quantum wells

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Cited by 56 publications
(63 citation statements)
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“…Excessive carriers 28 also suppressing BEC 29,30 can be compensated by injection of carriers with an opposite charge 10 . Finally, in the spatially separated 31,32 continuous wave pumping regime cooled (charge compensated 33 ) excitons flow to the studied area of the QW. They can be cooled additionally by evaporative techniques 34 .…”
Section: Introductionmentioning
confidence: 99%
“…Excessive carriers 28 also suppressing BEC 29,30 can be compensated by injection of carriers with an opposite charge 10 . Finally, in the spatially separated 31,32 continuous wave pumping regime cooled (charge compensated 33 ) excitons flow to the studied area of the QW. They can be cooled additionally by evaporative techniques 34 .…”
Section: Introductionmentioning
confidence: 99%
“…The development of excitonic devices that control exciton fluxes is mainly concentrated on indirect excitons in coupled quantum wells (CQW) [Hagn et al, 1995;Gärtner et al, 2006;High et al, 2007;1 Vögele et al, 2009;Kuznetsova et al, 2010b;Cohen et al, 2011;Winbow et al, 2011;Schinner et al, 2011;Leonard et al, 2012] and excitonpolaritons in microcavities [Amo et al, 2010;Gao et al, 2012;Ballarini et al, 2013;Nguyen et al, 2013;Sturm et al, 2014].…”
Section: Introductionmentioning
confidence: 99%
“…In this context, coupled double quantum wells (CDQWs) have received considerable attention due to their potential application in opto-electronic devices [1][2][3][4][5] and their importance for academic research, especially on the observation and understanding of new physical effects, such as, for example, the exciton condensation at low temperatures [6][7][8][9].…”
Section: Introductionmentioning
confidence: 99%