Electrorefractive Effect in GaInNAs/GaAs Five-Layer Asymmetric Coupled Quantum Well

Abstract

A GaInNAs/GaAs five-layer asymmetric coupled quantum well (FACQW) in the 1.3-mm-wavelength region was proposed and theoretically analyzed. The valence band structures of the FACQW were analyzed using the Luttinger-Kohn Hamiltonian based on the k Á p perturbation theory and a nonvariational method. The GaInNAs/GaAs FACQW can exhibit a unique behavior of the quantum confined Stark effect, leading to a large electrorefractive index change (Án=ÁF ¼ 3:9 Â 10 À4 cm/kV) at a small electric field in a wide-transparencywavelength region far from the absorption edge. This characteristic is comparable to InGaAs/InAlAs and InGaAsP FACQWs operated in the 1.55-mm-wavelength region. The GaInNAs/GaAs FACQW is expected to realize ultrawide-band, ultrafast optical modulators and switches and other functional devices based on the phase shift in the 1.3-mm-wavelength region. The driving voltage of a 1 mm-phase modulator is estimated to be 0.4 V. #

Quantum Confinement Stark Effect of Different Gainnas Quantum Well Structures

“…Theoretical investigation attempts have been made on AlGaAs QW which calculated quantum confined energy shifts of different QW structures [20]. Electrorefractive index changed of five layers GaInNAs/GaAs are characterized and theoretically calculated [21]. However, theoretical investigation of GaInNAs's QCSE is rare.…”

Low-Voltage Mach–Zehnder Modulator with InGaAs/InAlAs Five-Layer Asymmetric Coupled Quantum Well

“…InGaAs/InAlAs and GaInNAs FACQWs for 1.55 and 1.3 m wavelength regions were also proposed, and their electrorefractive characteristics were studied. 14,15) In addition, a low voltage InP asymmetric coupled quantum well MZ modulator was proposed and demonstrated. 16) In this paper, we demonstrate a low-voltage MZ modulator with a multiple InGaAs/InAlAs FACQW in a core layer in the 1.55 m wavelength region.…”

InGaAs/InAlAs Five-Layer Asymmetric Coupled Quantum Well Exhibiting Giant Electrorefractive Index Change

“…That is over one order of magnitude larger than that of a conventional RQW. For example, giant electrorefractive sensitivity jdn=dFj of as large as 1:7 Â 10 À4 cm/kV was observed in GaAs/AlGaAs FACQWs for wavelengths of approximately 0.9 m. 11,12) InGaAs/InAlAs FACQWs 13) and GaInNAs FACQWs 14) for wavelengths of approximately 1.55 and 1.3 m were also proposed and their electrorefractive characteristics were studied. The electro-optical effects in strain-compensated InGaAs/InAlAs coupled QWs with modified potential have also been published.…”