Electroreflectance Spectra of InGaN/AlGaN/GaN p-n-Heterostructures

Yunovich, A. E.; Avakyants, L. P.; Badgutdinov, M. L.; Bokov, P. Yu.; Chervyakov, А. V.; Shirokov, S. S.; Vasil'eva, E. D.; Feopentov, A. V.; Snegov, Fedor; Bauman, D. A.; Yavich, B.

doi:10.1557/proc-0955-i15-36

Cited by 2 publications

(3 citation statements)

References 5 publications

(3 reference statements)

Supporting

Mentioning

Contrasting

Order By: Relevance

“…One can see three kinds of the interference fringes with the periods "A", "B" and "C" at the spectra. As it was shown at [5], period of the interference fringes "A" and…”

Section: Samples and Experimental Techniquementioning

confidence: 69%

See 1 more Smart Citation

Electroreflectance diagnostics of InGaN/AlGaN/GaN based LEDs structures

Avakyants

Bokov²,

Chervyakov

et al. 2009

Phys. Status Solidi (c)

Self Cite

View full text Add to dashboard Cite

The LEDs InGaN/AlGaN/GaN heterostructures have been studied by means of electroreflectance spectroscopy. The interference fringes were observed in the electroreflectance spectra in the range of 460 – 1000 nm. Analysis of the period of the fringes shows that they are connected with the interference in the layers of the heterostructure with thicknesses of 240 nm, 720 nm and 4.9 μm. The interference signal from the region between multiple quantum wells and reflective mirror is connected with the changing of the reflection coefficient from the multiple quantum wells due to modulation of the electric field in the pn‐junction and was used to determine the position of the multiple quantum wells in the heterostructures. (© 2009 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)

show abstract

“…One can see three kinds of the interference fringes with the periods "A", "B" and "C" at the spectra. As it was shown at [5], period of the interference fringes "A" and…”

Section: Samples and Experimental Techniquementioning

confidence: 69%

“…The area of the crystal was ≅0.4 mm 2 . The ER spectra were registered by 0.3 m double grating monochromator equipped with Si photodiode in the spectral range of 380 -1100 nm [4,5]. Electric field was modulated by applying the rectangular voltage pulses (f=370 Hz).…”

Section: Samples and Experimental Techniquementioning

confidence: 99%

Electroreflectance diagnostics of InGaN/AlGaN/GaN based LEDs structures

Avakyants

Bokov²,

Chervyakov

et al. 2009

Phys. Status Solidi (c)

Self Cite

View full text Add to dashboard Cite

show abstract

“…The ER spectra were registered by 0.3 m double grating monochromator equipped with Si photodiode in the spectral range of 380 -1100 nm [5]. Electric field was modulated by applying the rectangular voltage pulses (f=370 Hz).…”

Section: Electroreflectance From Leds Structuresmentioning

confidence: 99%

Piezoelectric field compensation in the InGaN quantum wells of GaN/InGaN/AlGaN LEDs structures: electroreflectance experiment

Avakyants

Bokov²,

Chervyakov

et al. 2010

Phys. Status Solidi (c)

Self Cite

View full text Add to dashboard Cite

The influence of built‐in piezoelectric field in the light‐emitting diodes based on InGaN/AlGaN/GaN heterostructures on the electroreflectance spectra have been studied. The structures were grown by MOCVD technology and «flip‐chip» mounted. The spectral line connected with the InGaN/GaN multiple quantum wells region are observed in the electroreflectance spectra. The blue shift of this spectral line with the increasing reverse bias voltage has been explained as the result of decreasing of the electric field in the quantum well. (© 2010 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)

show abstract

Electroreflectance Spectra of InGaN/AlGaN/GaN p-n-Heterostructures

Cited by 2 publications

References 5 publications

Electroreflectance diagnostics of InGaN/AlGaN/GaN based LEDs structures

Electroreflectance diagnostics of InGaN/AlGaN/GaN based LEDs structures

Piezoelectric field compensation in the InGaN quantum wells of GaN/InGaN/AlGaN LEDs structures: electroreflectance experiment

Contact Info

Product

Resources

About