Electroreflectance and band structure of gray tin

Cardona, M.; McElroy, Paul T.; Pollak, Fred H.; Shaklee, K. L.

doi:10.1016/0038-1098(66)90178-5

Cited by 40 publications

(2 citation statements)

References 8 publications

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“…For the optimum form factor, w(220) is chosen, while the other form factors w(ll1) and w(311) have the values given in [lo]. According to the procedure 5 , we calculate the coefficients C,, T [22] T a b l e 3…”

Section: Results and Conclusionmentioning

confidence: 99%

Model pseudopotential for elementary semiconductors

Mašović

Zeković²

1979

Physica Status Solidi (b)

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A simple model pseudopotential, particularly suitable for energy band calculations in elementary semiconductors, is presented. It includes the Veljkovid-Slavid's general model pseudopotential and phenomenological correction. This correction represents a sum of spherical Bessel functions of higher order with the coefficients obtained by fitting the form factor of the pseudopotential t o the experimental values of the transition energies around the energy gap. The band structures of Si, Ge, and a-Sn are calculated and agree well with the experimental data. This pseudopotential is tested b y calculating the resistivity of liquid Si, Ge, and Sn. On propose dans ce travail un simple modele de pseudopotential permettant le calcul des bandes d'knergie des semiconducteurs dlementaires. I1 contient le modele g h h l du pseudopotentiel de Veljkovid e t de Slavii: une correction phdnomdnologique sous forme d'une somme des fonctions spheriques de Bessel e t avec les coefficients obtenus par l'accommodement des facteurs de forme de ce pseudopotentiel aux valeurs expdrimentales de 1'6nergie de transitions autour de la bande interdite. Les bandes ddnergie de Si, de Ge e t de a-Sn sont calqubes e t elles s'accordent tres bien avec les donnees expkrimentales. Ce pseudopotentiel est test6 par le calcul de la resistance de Si, de Ge e t de Sn dans la phase liquide.

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Section: Results and Conclusionmentioning

confidence: 99%

Model pseudopotential for elementary semiconductors

Mašović

Zeković²

1979

Physica Status Solidi (b)

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“…Furthermore, the difference between the conduction band minima decreases with the application of tensile strain. The diamond cubic structure of Sn, α-Sn, is a semimetal (29). The alloy material GeSn has a band structure that is a combination of the individual Ge and α-Sn band structures.…”

Section: Gesn Alloys For Infrared Lasersmentioning

confidence: 99%

(Invited) Toward GeSn Lasers: Light Amplification and Stimulated Emission in GeSn Waveguides at Room Temperature

Mathews

Zhao

et al. 2016

ECS Trans.

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Waveguides were fabricated from n-type doped GeSn layers with Sn content in the range 4.4-7.0 % Sn grown on Ge-buffered Si substrates. The waveguides were optically pumped a 976nm continuous wave laser, and their power output was measured as a function of pump power. The output power dependence indicates light amplification through stimulated emission, and that GeSn acts as a gain medium. Under the experimental conditions, the cavity gain did not exceed the lasing threshold, but amplified spontaneous emission was still observed. This demonstration of optical gain at room temperature is an important first step to achieving room temperature lasing in GeSn.

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2.1.5 alpha-Sn (grey tin)

Chiang¹,

Himpsel²

Landolt-Börnstein - Group III Condensed Matter

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Electroreflectance and band structure of gray tin

Cited by 40 publications

References 8 publications

Model pseudopotential for elementary semiconductors

Model pseudopotential for elementary semiconductors

(Invited) Toward GeSn Lasers: Light Amplification and Stimulated Emission in GeSn Waveguides at Room Temperature

2.1.5 alpha-Sn (grey tin)

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