Electronic versus geometric contrast in cross-sectional STM images of III-V semiconductor heterostructures

Kim, Seong‐Gon; Erwin, S. C.; Nosho, B. Z.; Whitman, L. J.

doi:10.1103/physrevb.67.121306

Cited by 20 publications

(19 citation statements)

References 18 publications

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“…In this filled state tunneling image, the ''dark'' (i.e. topographically lower) regions represent InAs layers and the ''bright'' regions the GaSb layers [5,7,10]. Note that the few brightest, cluster-like structures on the surface correspond to small, monolayer-height islands resulting from an imperfect cleave.…”

Section: Resultsmentioning

confidence: 99%

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Arsenic cross-contamination in GaSb/InAs superlattices

Jackson¹,

Boishin²,

Aifer³

et al. 2004

Journal of Crystal Growth

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Section: Resultsmentioning

confidence: 99%

“…The XSTM images shown here were recorded for filled electronic states, typically at 2.4 V and 60 pA, nominally imaging the anion sublattice (i.e. every other row of Sb or As atoms) [7].…”

Section: Methodsmentioning

confidence: 99%

Arsenic cross-contamination in GaSb/InAs superlattices

Jackson¹,

Boishin²,

Aifer³

et al. 2004

Journal of Crystal Growth

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“…Within each terrace, As atoms exposed by the cleave appear ''darker'' due to the shorter Al-As bond length. 16,19 As can be seen in Fig. 2, the digitally deposited As in the bottom clad is very well confined.…”

Section: Photoluminescence and Xstm Characterizationmentioning

confidence: 66%

Correlating growth conditions with photoluminescence and lasing properties of mid-IR antimonide type II “W” structures

Canedy¹,

Boishin²,

Bewley³

et al. 2004

Journal of Vacuum Science &Amp; Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena

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We explored the evolution of the photoluminescence ͑PL͒ properties versus molecular beam epitaxy growth conditions for a series of type II ''W'' quantum well ͓InAs/GaInSb/InAs/AlAsSb͔ structures. The highest PL intensities are obtained when the quantum wells are grown in a temperature range between 487 and 507°C. Cross-sectional scanning tunneling microscopy was used to explain the temperature evolution of the PL. AlAs clustering within the AlAsSb barrier was observed at low growth temperature. The PL intensity decrease at high temperature was related to In clustering in the GaInSb layer. Laser structures grown at both 425 and 500°C displayed lower lasing thresholds, lower internal losses, and longer Shockley-Read lifetimes than any similar structures grown previously at NRL. A thicker optical cladding layer of 3.5 m suppressed mode leakage into the substrate and reduced the internal loss to 2.1 cm Ϫ1 at 78 K.

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“…Recall that XSTM reveals every other (0 0 1) growth plane as a row on a f1 1 0g cross-sectional surface [13], with the filled (empty) states nominally showing the location of the As/Sb (Al/In) sublattice. Therefore, ideally every fourth row in the filledstate, gray-scale image should be AlAs, which appears lower (darker) because of the shorter Al-As bond length [13,14]. However, only a hint of the expected AlAs rows is noticeable.…”

Section: Resultsmentioning

confidence: 92%

“…The greater efficiency of the activated exchange process should therefore increasingly favor the formation of AlAs at higher temperatures. Similarly, for the GaSb/InAs system, exposing GaSb to As 2 during a growth interrupt results in GaAs formation, and GaAs-like interfaces are typically rougher than those with InSb interfacial bonds [14,18]. In our case, the Al flux was kept constant, with only the anion flux modulated, so there were no anion ''soaks'' to promote such exchange.…”

Section: Discussionmentioning

confidence: 97%