Electronic transport properties of Ti-impurity band in Si

Olea, J.; González-Dı́az, G.; Pastor, David; Mártil, I.

doi:10.1088/0022-3727/42/8/085110

Cited by 38 publications

(45 citation statements)

References 25 publications

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“…In this way, the laser thermal annealing ͑LTA͒ process could be a technological key to obtain an IB in bulk semiconductors. 10,[14][15][16] The effect of the LTA process on III-V semiconductors has been reported previously. 17 However, as far as we are concerned no detailed study has been carried out on GaP.…”

Section: Introductionmentioning

confidence: 88%

Laser thermal annealing effects on single crystal gallium phosphide

Pastor¹,

Olea²,

Toledano-Luque³

et al. 2009

Journal of Applied Physics

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We have studied the laser thermal annealing ͑LTA͒ effects on single crystal GaP. The samples have been analyzed by means of Raman spectroscopy, glancing incidence x-ray diffraction ͑GIRXD͒, and transmission electron microscopy ͑TEM͒ measurements. After LTA process, the Raman spectra of samples annealed with the highest energy density show a forbidden TO vibrational mode of GaP. This result suggests the formation of crystalline domains with a different orientation in the annealed region regarding the GaP unannealed wafer. This behavior has been corroborated by GIXRD measurements. TEM images show that the LTA produces a defective layer with disoriented crystalline domains in the surface. The depth of this defective layer increases with the energy density of LTA. The lack of crystallinity after LTA processes could be related with the high bond energy value of GaP.

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Section: Introductionmentioning

confidence: 88%

Laser thermal annealing effects on single crystal gallium phosphide

Pastor¹,

Olea²,

Toledano-Luque³

et al. 2009

Journal of Applied Physics

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“…The main difference between the model presented here and those previously reported 8,9 is the consideration of the current limitation between the implanted layer and the substrate introduced by the rectifying behavior of the implanted-substrate junction. The details dealing with this junction were previously reported in Ref.…”

Section: Introductionmentioning

confidence: 89%

“…8,9 In Ref. 8 we have highlighted an important aspect: the rectifying character of the IBS/n-Si substrate junction at low temperatures.…”

Section: Introductionmentioning

confidence: 99%

“…On the other hand, in Ref. 9, we have successfully fitted the measured sheet resistance of samples with the ATLAS code. 10 However, as this code could not simulate an IBS, we artificially introduced in the ATLAS framework a pseudosemiconductor in which the valence band emulated the IB, with an almost constant hole density, and the CB was similar to the Si one.…”

Section: Introductionmentioning

confidence: 99%

“…Rutherford backscattering measurements showed that the Ti atoms within the Si lattice are located mostly interstitially. 9 P. Wahnón and co-workers 11 ab initio calculations that the Ti interstitial atoms in a host Si lattice could produce an IBS. As the Ti electronic configuration is 1s 2 2s 2 2p 6 3s 2 3p 6 4s 2 3d 2 , each atom is able to give one to four electrons to the IB.…”

Section: Introductionmentioning

confidence: 99%

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Two-layer Hall effect model for intermediate band Ti-implanted silicon

Olea

González-Dı́az

Pastor

et al. 2011

Journal of Applied Physics

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Si samples have been implanted with very high Ti doses (over the theoretical Mott limit) to obtain an intermediate band (IB) in the host semiconductor. The electronic transport properties of this material have been analyzed by temperature-dependent sheet resistance and Hall effect measurements in the 7-400 K range. The experimental results are successfully explained by means of an analytical two-layer model, in which the implanted layer and the substrate behave as an IB/ n-Si type junction. We deduce that the IB is located at 0.38 eV below the conduction band, which is around one third of the Si bandgap, i.e., theoretically close to the optimum location for an IB. Finally, we obtain that carriers at the IB behave as holes with a mobility of 0.4-0.6 cm 2 V À1 s À1 . This extremely low mobility is the one expected for a semifilled, metallic band, being this metallic condition of the IB a requirement for IB solar cells.

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Room‐Temperature Infrared Photoresponse from Ion Beam–Hyperdoped Silicon

Wang

Berencén

2020

Physica Status Solidi (a)

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Room‐temperature broadband infrared photoresponse in Si is of great interest for the development of on‐chip complementary metal–oxide–semiconductor (CMOS)‐compatible photonic platforms. One effective approach to extend the room‐temperature photoresponse of Si to the mid‐infrared range is the so‐called hyperdoping. This consists of introducing deep‐level impurities into Si to form an intermediate band within its bandgap enabling a strong intermediate band–mediated infrared photoresponse. Typically, impurity concentrations in excess of the equilibrium solubility limit can be introduced into the Si host either by pulsed laser melting of Si with a gas‐phase impurity precursor, by pulsed laser mixing of a thin‐film layer of impurities atop the Si surface, or by ion implantation followed by a subsecond annealing step. In this review, a conspectus of the current status of room‐temperature infrared photoresponse in hyperdoped Si by ion implantation followed by nanosecond‐pulsed laser annealing is provided. The possibilities of achieving room‐temperature broadband infrared photoresponse in ion beam–hyperdoped Si with different deep‐level impurities are discussed in terms of material fabrication and device performance. The thermal stability of hyperdoped Si with deep‐level impurities is addressed with special emphasis on the structural and the optoelectronic material properties. The future perspectives on achieving room‐temperature Si‐based broadband infrared photodetectors are outlined.

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Electronic transport properties of Ti-impurity band in Si

Cited by 38 publications

References 25 publications

Laser thermal annealing effects on single crystal gallium phosphide

Laser thermal annealing effects on single crystal gallium phosphide

Two-layer Hall effect model for intermediate band Ti-implanted silicon

Room‐Temperature Infrared Photoresponse from Ion Beam–Hyperdoped Silicon

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