Electronic transport in tin-doped indium oxide thin films prepared by sol-gel technique

Tahar, Radhouane Bel Hadj; Ban, Takayuki; Ohya, Yutaka; Takahashi, Yasutaka

doi:10.1063/1.366949

Cited by 85 publications

(14 citation statements)

References 27 publications

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“…For the air-annealed ITO thin films, an increase in Sn concentration of up to 15 at.% near the grain boundaries compared to 5 at.% in the bulk was reported by Morikawa et al 30 Since the solubility limit of Sn in In 2 O 3 is around 6-9 at.%, 16,22,[31][32][33] to phases such as SnO 2 or In 4 Sn 3 O 12 . 22,31 The formation of intergranular amorphous phases with high concentration of neutral dopants was also reported.…”

Section: Resultsmentioning

confidence: 75%

“…It is believed that these large surface states result from the crystallographic as well as the compositional disorder such as a higher free volume, Sn segregation 30 and oxidation 22,31,32 near the grain boundaries. For instance, Gassenbauer et al 26 have reported a direct relation between the surface states and the Sn concentration for the ITO thin films.…”

Section: Resultsmentioning

confidence: 99%

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Electron mobility variations in surface-charged indium tin oxide thin films

Dasgupta¹,

Lukas²,

Dössel³

et al. 2009

Phys. Rev. B

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A large variation in electrical resistance induced by an electrochemical surface charge is observed for the ultrathin films of indium tin oxide ͑ITO͒. A decrease and increase in resistance is noticed when the negative and positive surface charge is applied to the ITO thin films, respectively. An increase in total effect-size is obtained with a decrease in film thickness. Two contributions are considered to account for the measured effect: the variation in the carrier density and the modification of the charge carrier mobility. The first contribution, which is estimated from the Hall-effect measurements and applied surface charge density, can explain only a small fraction of the observed variation in electronic transport. The correlation of the other contribution ͑i.e., a variation in the electron mobility͒ with the film morphology and the local electronic states is examined by scanning tunneling microscopy and spectroscopy studies. Scanning tunneling spectra suggest that a local variation in charge carrier density exists on the grain surfaces and at the grain boundaries. Upon electrochemical surface charging, this local variation in density of states should result in an increase in the electronic roughness of the surface and a deeper penetration of the applied electric field at the grain boundaries. Thus, it is considered that a pronounced surface and grain boundary scattering of the conducting electrons is responsible for the large ͑electric͒ field effect observed in highly conducting oxides such as ITO.

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Section: Resultsmentioning

confidence: 75%

Section: Resultsmentioning

confidence: 99%

Electron mobility variations in surface-charged indium tin oxide thin films

Dasgupta¹,

Lukas²,

Dössel³

et al. 2009

Phys. Rev. B

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“…This table clearly shows that scattering by grain boundaries apparently play a subordinate role in the present films since the carrier mean free path is considerably shorter than the average crystallite. Radhouane et al 19,26 have demonstrated that the behavior of the electron mobility in sol-gel coated AZO films can be interpreted in terms of neutral and ionized impurity scattering. Kim et al 27 reported that the carrier concentration decreases from 7.5 × 10 20 /cm 3 for the AZO sputtered film prepared with the 3 wt.% Al 2 O 3 target to ∼2.4 × 10 20 /cm 3 for sample prepared with the 5 wt.% Al 2 O 3 target.…”

Section: Electrical Characteristicsmentioning

confidence: 98%

Structural and electrical properties of aluminum-doped zinc oxide films prepared by sol–gel process

Tahar

2005

Journal of the European Ceramic Society

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“…Due to its high transmittance and good physical and chemical properties [1,2], it is widely used in optical devices like flat panel displays, solar cells, sensors, and so on [3][4][5]. There are many different methods for the fabrication of ITO thin films including the magnetron sputtering method [6,7], thermal evaporation method [8], plasma ion-assisted evaporation [9], reactive electron-beam evaporation [10], and sol-gel method [11]. It is well known that almost all thin films, produced by the various deposition techniques, have residual stresses.…”

Section: Introductionmentioning

confidence: 99%

Effect of Oxygen Flow Rate on the Optical, Electrical, and Mechanical Properties of DC Sputtering ITO Thin Films

Tien

Lin

Chang

et al. 2018

Advances in Condensed Matter Physics

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This study presents the effect of oxygen flow rate on the optical, electrical, and mechanical properties of indium tin oxide (ITO) thin films prepared by the DC magnetron sputtering technique. The oxygen flow rate was varied from 10 to 50 sccm. The ITO thin films deposition under different oxygen flow rates exhibits different properties. We used an optical spectrometer to measure the optical transmittance and a four-point probe instrument to determine the resistivity. A home-made Twyman-Green interferometer was used to evaluate residual stress and a microscopic interferometer was used to measure the surface roughness of ITO thin films. The experimental results show that the average optical transmittance is larger than 85% in visible range; the electrical resistivity has a minimum 6.85 × 10 −4 ohm-cm for the oxygen flow of 10 sccm. The residual stress is varied from −0.15 GPa to −0.34 GPa in the range of 10-50 sccm. The root-mean-square (rms) surface roughness is changed from 2.64 nm to 2.74 nm as the oxygen flow rate increases. The results show that the oxygen flow rate has significant influence on the electrical resistivity, residual stress, and surface roughness of the ITO thin film.

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Electronic transport in tin-doped indium oxide thin films prepared by sol-gel technique

Cited by 85 publications

References 27 publications

Electron mobility variations in surface-charged indium tin oxide thin films

Electron mobility variations in surface-charged indium tin oxide thin films

Structural and electrical properties of aluminum-doped zinc oxide films prepared by sol–gel process

Effect of Oxygen Flow Rate on the Optical, Electrical, and Mechanical Properties of DC Sputtering ITO Thin Films

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