Structural and electrical properties of aluminum-doped zinc oxide films prepared by sol–gel process

Tahar, Radhouane Bel Hadj

doi:10.1016/j.jeurceramsoc.2004.08.028

Cited by 61 publications

(19 citation statements)

References 23 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…The same trend is observed for the mobility values which are smaller than that of single ZnO crystals (180 cm 2 /V•s) [28]. Essentially, the same behavior was observed for zinc oxide films doped with aluminum [26] [27] or boron [29]. Scattering at grain boundaries is sometimes postulated in polycrystalline films with small crystallite size.…”

Section: Electrical Propertiessupporting

confidence: 64%

“…However, one should note that the TG/DTA results should not be directly extrapolated to the case of a film, because they were recorded on gel powders and at a slow heating rate, whereas the films prepared in this study were rapidly calcined in a preheated furnace [26]. The weight loss of the dried gel as a function of temperature indicates there are distinct temperature regions for decomposition.…”

Section: Thermo-gravimetric and Differential Thermal Analysismentioning

confidence: 95%

See 1 more Smart Citation

Sol-Gel Processed Indium-Doped Zinc Oxide Thin Films and Their Electrical and Optical Properties

Bel-Hadj-Tahar¹,

Mohamed²

2014

NJGC

View full text Add to dashboard Cite

Transparent conducting films of zinc oxide and indium-doped zinc oxide have been prepared by a simple and economical sol-gel technique. This process is feasible for the fabrication of high quality TCO thin films when the processing parameters are optimized. It was found that the out-diffusion of oxygen during the vacuum annealing step was a crucial factor to prepare thin layer with superior properties. Annealing lowers the resistivity down to 4.7 10 −3 Ω•cm for the 1 at.% doped films due to the liberation of high-valency In-dopants and the enhanced film density. At high indium concentrations, the free electron density stabilizes because an increasing number of dopant atoms form some kinds of neutral defects. The neutralized indium atoms do not contribute free electrons. The feasibility to deposit highly transparent ZnO thin films has been demonstrated.

show abstract

Section: Electrical Propertiessupporting

confidence: 64%

Section: Thermo-gravimetric and Differential Thermal Analysismentioning

confidence: 95%

Sol-Gel Processed Indium-Doped Zinc Oxide Thin Films and Their Electrical and Optical Properties

Bel-Hadj-Tahar¹,

Mohamed²

2014

NJGC

View full text Add to dashboard Cite

show abstract

“…The electrical properties of the oxides depend critically on the oxidation state of the metal component (stoichiometry of the oxide) and on the nature and quantity of impurities incorporated into the films, either intentionally or inadvertently 43 . Oxygen vacancies occupied with two electrons as well as zinc interstitials are the two types of defects responsible for the n‐type conductivity in pure ZnO 44,45 …”

Section: Resultsmentioning

confidence: 99%

“…Various sources of electron scattering may influence the electrical properties of semiconducting thin films. Grain boundaries, ionized point defects, and neutral impurities are the major scattering centers 44 . When the film was built up with relatively thick layers, the grain size was small (see Table IV), and the grain boundary scattering is a crucial factor that results in mediocre mobility values.…”

Section: Resultsmentioning

confidence: 99%

Effects of Individual Layer Thickness on the Microstructure and Optoelectronic Properties of Sol–Gel‐Derived Zinc Oxide Thin Films

Tahar

Salah

et al. 2008

Journal of the American Ceramic Society

Self Cite

View full text Add to dashboard Cite

Zinc oxide (ZnO) thin films were prepared under different conditions on glass substrates using a sol–gel process. The microstructure of ZnO films was investigated by means of diffraction analysis, and plan‐view and cross‐sectional scanning electron microscopy. It was found that the preparation conditions strongly affected the structure and the optoelectronic properties of the films. A structural evolution in morphology from spherical to columnar growth was observed. The crystallinity of the films was improved and columnar film growth became more dominant as the zinc concentration and the substrate withdrawal speed decreased. The individual layer thickness for layer‐by‐layer homoepitaxy growth that resulted in columnar grains was <20 nm. The grain columns are grown through the entire film with a nearly unchanged lateral dimension through the full film thickness. The columnar ZnO grains are c‐axis oriented perpendicular to the interface and possess a polycrystalline structure. Optical transmittance up to 90% in the visible range and electrical resistivity as low as 6.8 × 10−3·Ω·cm were obtained under optimal deposition conditions.

show abstract

“…ZnO films can be prepared by many methods, such as thermal oxidation of Zn metallic films [109], sol gel process [110], sputtering [111], chemical vapor deposition [112], pulse laser deposition [113], evaporating method [114], and electrochemical process [115,116].…”

Section: Nanocrystalline Znomentioning

confidence: 99%

Nanocrystalline Metal Oxides for Methane Sensors: Role of Noble Metals

Basu

2009

Journal of Sensors

130

View full text Add to dashboard Cite

Methane is an important gas for domestic and industrial applications and its source is mainly coalmines. Since methane is extremely inflammable in the coalmine atmosphere, it is essential to develop a reliable and relatively inexpensive chemical gas sensor to detect this inflammable gas below its explosion amount in air. The metal oxides have been proved to be potential materials for the development of commercial gas sensors. The functional properties of the metal oxide-based gas sensors can be improved not only by tailoring the crystal size of metal oxides but also by incorporating the noble metal catalyst on nanocrystalline metal oxide matrix. It was observed that the surface modification of nanocrystalline metal oxide thin films by noble metal sensitizers and the use of a noble metal catalytic contact as electrode reduce the operating temperatures appreciably and improve the sensing properties. This review article concentrates on the nanocrystalline metal oxide methane sensors and the role of noble metals on the sensing properties.

show abstract

Structural and electrical properties of aluminum-doped zinc oxide films prepared by sol–gel process

Cited by 61 publications

References 23 publications

Sol-Gel Processed Indium-Doped Zinc Oxide Thin Films and Their Electrical and Optical Properties

Sol-Gel Processed Indium-Doped Zinc Oxide Thin Films and Their Electrical and Optical Properties

Effects of Individual Layer Thickness on the Microstructure and Optoelectronic Properties of Sol–Gel‐Derived Zinc Oxide Thin Films

Nanocrystalline Metal Oxides for Methane Sensors: Role of Noble Metals

Contact Info

Product

Resources

About