Electronic Transport Characteristics of a Graphene Nanoribbon Based p–n Device

Pandya, Ankur; Jha, Prafulla K.

doi:10.1007/s11664-019-07388-z

Cited by 10 publications

(5 citation statements)

References 55 publications

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“…This behavior exclusively depends on how the graphene sheet cuts along with its plane (Figure 1). As shown in Figure 3, the bandgap increases with reducing nanoribbon width in an exponential manner [17][18][19][20]. Recently, it has been reported that applying a transverse magnetic field to the ribbon width induce the tunable bandgap i.e.…”

Section: Introductionmentioning

confidence: 89%

Graphene-Based Nanophotonic Devices

Pandya¹,

Sorathiya²,

Lavadiya³

2020

Recent Advances in Nanophotonics - Fundamentals and Applications

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Graphene is an ideal 2D material that breaks the fundamental properties of size and speed limits by photonics and electronics, respectively. Graphene is also an ideal material for bridging electronic and photonic devices. Graphene offers several functions of modulation, emission, signal transmission, and detection of wideband and short band infrared frequency spectrum. Graphene has improved human life in multiple ways of low-cost display devices and touchscreen structures, energy harvesting devices (solar cells), optical communication components (modulator, polarizer, detector, laser generation). There is numerous literature is available on graphene synthesis, properties, devices, and applications. However, the main interest among the scientist, researchers, and students to start with the numerical and computational process for the graphene-based nanophotonic devices. This chapter also includes the examples of graphene applications in optoelectronics devices, P-N junction diodes, photodiode structure which are fundamental devices for the solar cell and the optical modulation.

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Section: Introductionmentioning

confidence: 89%

Graphene-Based Nanophotonic Devices

Pandya¹,

Sorathiya²,

Lavadiya³

2020

Recent Advances in Nanophotonics - Fundamentals and Applications

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“…where m 0 is the electron rest mass and L is the width of potential well in the free electron quantum mechanical model which can be expressed in terms of volume as L = v 1/3 . With this substitution in equation ( 6), the expression for Fermi velocity may be expressed as [3]:…”

Section: Band Gap Calculation Of Nanoribbons Using the Electronic Fer...mentioning

confidence: 99%

“…Under the consideration of standard magnitudes of constants, the acoustical deformation potential can be expressed using equations ( 15)-( 18) as [3]:…”

Section: The Adp Scattering Mechanismmentioning

confidence: 99%

“…The energy band gap determination of novel two-dimensional (2D) nanomaterials has gained immense interest and importance in recent years for both fundamental research and applications amongst materials scientists [1][2][3][4][5][6]. Graphene, h-boron nitride nanosheet, phosphorene, plumbene, stanene, and 2D transition metal dichalcogenides (TMDCs) such as MoS 2 , WS 2 , and MoSe 2 are considered as the most revolutionary hexagonal 2D materials by the scientific community due to their application driven properties [7][8][9][10][11][12].…”

Section: Introductionmentioning

confidence: 99%

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Band gap determination of graphene, h-boron nitride, phosphorene, silicene, stanene, and germanene nanoribbons

Pandya

Sangani

Jha

2020

J. Phys. D: Appl. Phys.

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The energy band gap of graphene, h-boron nitride, stanene, silicene, germanene, and phosphorene nanoribbons is investigated theoretically with two approaches. In the first approach, a set of equations to calculate the energy band gap of nanoribbons is deduced using the expression of Fermi velocity. The size dependency of the energy band gap so obtained confirms previous expressions. The second approach, however, determines resistivity by directly connecting quantity to the energy band gap using an electron-acoustical phonon scattering mechanism. For the calculation of the energy band gap and resistivity, the armchair configuration of nanoribbons is considered. It is observed that the transverse magnetic field influences the energy band gap and resistivity. The magnitude of the band gap is negative up to a certain value of the field and turns positive at a sufficiently higher field. The negative band gap can be interpreted as metallic behavior of the materials. The results of the work are useful in the determination of the energy band gap of nanoribbons for their nanoelectronic and optoelectronic applications as well as tuning the band gap using the applied magnetic field.

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“…Single-layer materials exhibit novel physical phenomena with potential applications in nanoscale electronics. − Graphene, a single atomic layer of carbon, has attracted extensive research interest over the past decades and introduced many possibilities into the design of nanoelectronic devices since its successful fabrication in 2004 due to its outstanding mechanical, − electronic, , and magnetic properties. − Graphene consists of a layer of carbon atoms closely connected in a hexagonal lattice. Each carbon atom has an sp 2 hybridization state and forms σ bonds with adjacent carbon atoms. − This sp 2 hybridization state is the reason for graphene’s hexagonal lattice stability, its resistance to a variety of planar deformations, and is responsible for the extraordinary mechanical properties of graphene.…”

Section: Introductionmentioning

confidence: 99%

Bias-Dependent Multichannel Transport in Graphene–Boron Nitride Heterojunction Nanoribbons

Nam

Lee

et al. 2020

ACS Appl. Electron. Mater.

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We designed multinary heterojunctions (Z-GBNR) composed of Z-GNR and Z-BNNR. All possible combinations and interface configurations of binary (Z-GBN[n,m]) and ternary (Z-BNGBN[ n , m , n ] and Z-GBNG[ m , n , m ′]) heterojunctions were studied to explore the structural effects of the heterojunctions on electron transport properties. Our results reveal that Z-GBNR show characteristic bias-dependent multichannel transport behaviors due to the distinctive response of each electron transport channel. Specifically, the electron transport channels generated on Z-GNR and Z-BNNR exhibited alternating and sequential on/off, which strongly depended on the combinations and interface configurations of the heterojunctions and were related to the edge symmetry of Z-GNR and the edge termination of Z-BNNR. We demonstrate that edge-symmetric Z-GNR and B-edged Z-BNNR play a crucial role in the implementation of negative differential resistance (NDR) and stepwise current behaviors in Esaki-like diodes and multivalue logic transistors. Therefore, we propose Z-BNC[4,4] and Z-BNCNB[4,4,4] composed of only B-edged Z-BNNR and symmetric Z-GNR as Esaki-like diodes with bias-dependent alternating on/off behavior for each electron transport channel on Z-BNNR and Z-GNR. We show that Z-CBNC[8,4,6] has cumulatively increased the current in a stepwise manner due to the sequential contribution of each electron transport channel. We believe that our results will provide insights into the design and implementation of various electronic logic functions with multinary heterojunctions of Z-GNR and Z-BNNR based on an understanding of the structure–characteristic relationships for applications in the field of nanoelectronics.

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Electronic Transport Characteristics of a Graphene Nanoribbon Based p–n Device

Cited by 10 publications

References 55 publications

Graphene-Based Nanophotonic Devices

Graphene-Based Nanophotonic Devices

Band gap determination of graphene, h-boron nitride, phosphorene, silicene, stanene, and germanene nanoribbons

Bias-Dependent Multichannel Transport in Graphene–Boron Nitride Heterojunction Nanoribbons

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