Electronic transport and Schottky barrier heights of Pt/n-type GaN Schottky diodes in the extrinsic region

Abstract

The current-voltage characteristics of n-type GaN Schottky diodes have been measured in the extrinsic region ͑that is, the temperature range of 100-300 K͒. The effective density of states in the conduction band decreases with decreasing temperature and is close to the electron concentration at 100 K, leading to a reduction in the energy difference between the conduction band minimum and Fermi level and an increase in the probability of tunneling. Therefore, changes in the effective density of states in the conduction band and the probability of tunneling at low temperature are responsible for the decrease of the barrier height and increase in the ideality factor on the basis of the thermionic emission model. The mechanism of forward current flow has been clearly established in this study, leading to the thermionic emission ͑thermionic field emission͒ interpretation of the I-V characteristics at 300 K ͑100 K͒.

Photoluminescent, morphological and electrical properties of ZrO2 and ZrO2:polyvinyl alcohol composite thin films

“…The observable changes in the temperature-dependent currents for the rectifying devices were noted [32][33][34]. In order to understand this phenomenon, an analysis using the TE theory was presented [32][33][34]. For Au/ZrO 2 :PVA/n-Si devices, the value of J increases as temperature increases and the difference between the temperature-dependent currents in the low voltage region is significantly greater than the difference between the temperature-dependent currents in the high voltage region, because of the TE nature.…”

“…Compared with the Au/ZrO 2 /n-Si device, the Au/ZrO 2 :PVA/n-Si device exhibits a stronger temperature dependence for J-V characteristics. The observable changes in the temperature-dependent currents for the rectifying devices were noted [32][33][34]. In order to understand this phenomenon, an analysis using the TE theory was presented [32][33][34].…”

Analysis of Reverse-Bias Leakage Current Mechanisms in Metal/GaN Schottky Diodes

“…Analysis of the I-V/T characteristics of Schottky diodes on the basis of thermionic emission theory reveals a decrease in the apparent barrier height Φ BO and an increase in the ideality factor n with a decrease in temperature [5,6,12,15,16,19]. The temperature dependence of the apparent barrier height is frequently explained by invoking a Gaussian distribution of the SBH values at the interface between the Schottky metal and the semiconductor [15,16,19].…”

“…Dependences. Now let us represent the comparison of some I-V/T characteristics measured on diodes fabricated both on epitaxial GaN and on GaN nanowires with the PhAT rate dependence on field strength computed using (6). The fit of the leakage I-V/T curves obtained by Osvald et al [5] in the temperature range from 80 to 320 K for metal/n-GaN diode fabricated on N-polarity GaN grown by molecular-beam epitaxy to the tunneling rate dependences on field strength W(E, T) is shown in Figure 2.…”

“…Due to the technological importance of Schottky diodes, a full understanding of the nature of their electrical characteristics is of great interest. Recently a number of papers on reverse-bias leakage current mechanisms in M/GaN Schottky diodes appeared [3][4][5][6][7][8][9][10][11][12][13][14][15][16]. In papers [17][18][19][20], the investigation of Schottky contact on GaN nanowires were presented.…”