Electronic transitions in low dimensional semiconductor structures measured by surface photovoltage spectroscopy

X-Ray-Induced Modification of the Photophysical Properties of MAPbBr3 Single Crystals

“…Later, the method has been successfully applied also to the study of interfaces and defect states in semiconductors, due to its ability in the detection of band gap and sub-band gap states. The method is exhaustively explained in several reviews; − here, we briefly summarize it. The SPV signal is defined as the illumination-induced variation of the semiconductor surface potential: where V S light and V S dark are the surface potentials under illumination and under darkness, respectively.…”

Growth kinetics of crumb-like structure formation on SnO2 nanowires during direct oxidation

“…In recent decades, nanowires have emerged as versatile materials with applications spanning optoelectronics, thermoelectrics, gas sensing, and energy storage devices [ [1] , [2] , [3] , [4] , [5] ]. Their unique properties, such as high aspect ratio, large surface-to-volume ratio, and quantum confinement effects, have made nanowires indispensable for diverse technological advancements [ 6 , 7 ]. The influence of nanowire size at the nanoscale level induces substantial changes in optical and electronic properties, leading to notable alterations in bandgap and electrical characteristics [ 8 , 9 ].…”

Significant Enhancement in Optoelectronic Properties of γ-CuxAg1–xI Films Induced by Highly (111)-Preferred Orientation and Cu Content at Room Temperature

“…6,7 Investigations on the surface photovoltage (SPV) and transient SPV (TSPV) have been demonstrated to be critical for understanding carrier dynamics including carrier separation and carrier recombination behaviors for improving the efficiency of photovoltaic devices. 8 To improve efficiency and performance of the devices, it has been found that enhancing the photocurrent, photovoltage, and stability is a promising approach. 11 Among these factors, adjusting favorable orientation and morphology may lead a higher photocurrent density because of anisotropic electrical properties of materials.…”

“…To date, optoelectronic materials applied in photovoltaic devices have attracted tremendous attention toward settling issues of energy crisis. Copper iodide (CuI) and silver iodide (AgI) have been widely applied as hole transport layers (HTLs) , In addition, they both exhibit α, β, and γ crystalline phases, which transformed with different temperatures. − Moreover, γ-CuI and γ-AgI stable at room temperature can form a continuous solid solution copper silver iodide (Cu x Ag 1– x I) with varying components and a tunable band gap. , Investigations on the surface photovoltage (SPV) and transient SPV (TSPV) have been demonstrated to be critical for understanding carrier dynamics including carrier separation and carrier recombination behaviors for improving the efficiency of photovoltaic devices . Sankapal et al have studied crystal phases of AgI after the transition temperature by SPV spectroscopy.…”