Electronic structure patterns of isoelectronic compounds

Nefedov, V. I.; Buslaev, Yu. A.; Sergushin, N.P.; Kokunov, Yu. V.; Ковалев, В. В.; Bayer, L.

doi:10.1016/0368-2048(75)80017-x

Cited by 44 publications

(8 citation statements)

References 14 publications

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“…Fluoride in an AlF X compound is shifted ∼2.8 eV toward lower binding energies compared to the C-F bonding in parylene AF-4 at 689.1 eV for the F 1s XPS peak. [31][32][33] This peak for parylene AF-4 was referenced to the 35 This is the same surface that shows AlF X bonding in the F 1s spectra discussed previously.…”

Section: Aluminum Overlayersmentioning

confidence: 98%

Stability of fluorinated parylenes to oxygen reactive-ion etching under aluminum, aluminum oxide, and tantalum nitride overlayers

Senkevich

Wang

Fortin

et al. 2003

Journal of Elec Materi

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A driving force in the semiconductor industry has been the reduction in feature size to increase the speed and functionality per unit area. As the minimum feature size has been reduced to the submicron regime, the benefit of further reduction of device size will be increasingly offset by the interconnect or resistance capacitance (RC) delay. 1 With the intensified search for ultra-low dielectric-constant materials ( < 2.2), fluorination of polymeric materials is an option to reduce the dielectric constant of hydrocarbon polymers while still retaining a dense dielectric. To be compatible with copper-damascene processing, the low-interlayer dielectric (ILD) must possess a robust interface with copper-diffusion barriers, adhesion layers, or dielectric liners, depending on the back end of the line-metallization scheme. The presence of fluorine in the ILD, however, presents reliability concerns as any fluorine instability might seriously undermine diffusion/adhesion liners and copper wires. The present work investigates the stability of two fluorinated-parylene polymers before and after oxygen reactive-ion etching (RIE) in contact with Al, Al 2 O 3 , and TaN X overlayers. It is important to understand the chemical interaction between the fluorinated ILD and the barrier overlayer because trench formation in Cu-damascene architecture could be undertaken via oxygen RIE of the ILD.With the primary goal to improve adhesion, numerous research papers have devoted attention to the interface between metal films and surfacemodified fluoropolymers. Surface modification has been achieved by low-energy ion beams; 2,3 argon plasma; 4 water-vapor plasma; 5 remote-hydrogen plasma; 6,7 oxygen plasma; 8 filament-assisted watervapor modification; 9,10 strong bases, such as KOH and LiOH; 11,12 solution-borne reducing agents, such as benzoin dianion/DMSO and NaBH 4 ; 13,14 and solvated electrons. 15,16 Further, a book and a review article discuss the surface modification of polymeric surfaces via plasmas. 17,18 However, it is the particular interest here to study how fluorocarbons interact with oxidizing plasmas.There are two components of a typical plasma that can damage or etch a polymeric surface, the The fluorine stability of two parylenes, aliphatic-fluorinated AF-4 (␣, ␣, ␣Ј, ␣Ј poly(p-tetrafluoroxylylene) and aromatic-fluorinated VT-4 (2, 3, 5, 6 poly(p-tetrafluoroxylylene), were investigated underneath Al, Al 2 O 3 , and TaN X overlayers with and without exposure to oxygen reactive-ion etching (RIE). No fluorine diffusion was observed for Al films deposited onto the as-received parylenes. However, after oxygen RIE, x-ray photoelectron spectroscopy (XPS) depth profiling detected fluorine diffusion throughout Al and to a lesser extent Al 2 O 3 but in contrast to Ta 2.67 N. Metal-fluoride bonding was evident at the metal/parylene interface for all the overlayers after the parylene was exposed to oxygen RIE and annealed.

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Section: Aluminum Overlayersmentioning

confidence: 98%

Stability of fluorinated parylenes to oxygen reactive-ion etching under aluminum, aluminum oxide, and tantalum nitride overlayers

Senkevich

Wang

Fortin

et al. 2003

Journal of Elec Materi

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“…The spectra of SiF6 ~-and A1F6 awere reported by Nefedov et al [10] and here, due to the closeness of the energy levels, fewer are resolved. We have not been able to find a complete valence level spectrum of PF s-in the literature.…”

Section: Scf-xe Study Of Octahedral Complexesmentioning

confidence: 62%

An SCF-Xαstudy of the ionization energies of the octahedral complexes XF₆^n-(X=S, P, Si, Al)

1978

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“…Recently we found that the P(NMe 2 ) 3 (the compound belongs to a different class) reduces silver nitrate. This can be explained by the fact that it has a low ionization potential 78 and, simultaneously, easily forms phosphonium salts. 79 …”

Section: Resultsmentioning

confidence: 99%

The reduction of Ag(I) by α‐silylamines R₂NCH₂SiX₃

Lazareva

Vakul’skaya

Albanov

et al. 2006

Applied Organom Chemis

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Electronic structure patterns of isoelectronic compounds

Cited by 44 publications

References 14 publications

Stability of fluorinated parylenes to oxygen reactive-ion etching under aluminum, aluminum oxide, and tantalum nitride overlayers

Stability of fluorinated parylenes to oxygen reactive-ion etching under aluminum, aluminum oxide, and tantalum nitride overlayers

An SCF-Xαstudy of the ionization energies of the octahedral complexes XF₆^n-(X=S, P, Si, Al)

The reduction of Ag(I) by α‐silylamines R₂NCH₂SiX₃

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Electronic structure patterns of isoelectronic compounds

Cited by 44 publications

References 14 publications

Stability of fluorinated parylenes to oxygen reactive-ion etching under aluminum, aluminum oxide, and tantalum nitride overlayers

Stability of fluorinated parylenes to oxygen reactive-ion etching under aluminum, aluminum oxide, and tantalum nitride overlayers

An SCF-Xαstudy of the ionization energies of the octahedral complexes XF6n-(X=S, P, Si, Al)

The reduction of Ag(I) by α‐silylamines R2NCH2SiX3

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An SCF-Xαstudy of the ionization energies of the octahedral complexes XF₆^n-(X=S, P, Si, Al)

The reduction of Ag(I) by α‐silylamines R₂NCH₂SiX₃