Electronic structure, optical properties, and lattice dynamics in atomically thin indium selenide flakes

Sánchez-Royo, Juan F.; Muñoz‐Matutano, Guillermo; Brotons‐Gisbert, Mauro; Martínez‐Pastor, Juan P.; Segura, A.; Cantarero, A.; Boria, Vicente E.; Canet‐Ferrer, Josep; Tobias, Gerard; Canadell, Enric; Marqués-Hueso, José; Gerardot, Brian D.

doi:10.1007/s12274-014-0516-x

Cited by 170 publications

(180 citation statements)

References 69 publications

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“…It is interesting to note that while bulk InSe has a direct band gap (1.2 eV), reduction of its thickness first leads to a wider band gap due to quantum confinement, however further reduction of the thickness to a few layers results in a strong decrease of the photoluminescence. One of the reasons for this attenuation has been attributed to direct-to-indirect bandgap crossover, while another explanation has been attributed to the enhancement of non-radiative recombination processes in the thin flakes [15,16]. To date, InSe films have been produced mostly via chemical vapor deposition (CVD), sputtering, exfoliation, and electrodeposition [15,[17][18][19][20].…”

Section: Introductionmentioning

confidence: 99%

Atomic Layer Growth of InSe and Sb2Se3 Layered Semiconductors and Their Heterostructure

et al. 2017

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Abstract:Metal chalcogenides based on the C-M-M-C (C = chalcogen, M = metal) structure possess several attractive properties that can be utilized in both electrical and optical devices. We have shown that specular, large area films of γ-InSe and Sb 2 Se 3 can be grown via atomic layer deposition (ALD) at relatively low temperatures. Optical (absorption, Raman), crystalline (X-ray diffraction), and composition (XPS) properties of these films have been measured and compared to those reported for exfoliated films and have been found to be similar. Heterostructures composed of a layer of γ-InSe (intrinsically n-type) followed by a layer of Sb 2 Se 3 (intrinsically p-type) that display diode characteristics were also grown.

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Section: Introductionmentioning

confidence: 99%

Atomic Layer Growth of InSe and Sb2Se3 Layered Semiconductors and Their Heterostructure

et al. 2017

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“…The growth methods and properties of InSe nanoaggregates are presented also by the authors of Refs. [31][32][33][34][35][36][37][38][39][40][41] .…”

Section: Introductionmentioning

confidence: 99%

Linear and NLO spectroscopy of GaSe and InSe nanoparticles formed via laser ablation

et al. 2015

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Nanoparticles of layered GaSe, InSe were fabricated by laser ablation (LA) method (KrF laser, λ = 248 nm, 50 Hz, maximum energy 200 mJ, τ = 4 ns) and characterized by: •XRF; •GDOES; •SEM and TEM; •UV-, VIS-, and IRabsorption; •Raman and PL spectroscopy (also in confocal geometry). Results are discussed in relation to the particle size. Absorption spectra of particles with diameter 20 nm and less turned out to be blue shifted and is consisted with a weak confinement effect on Wannier-Mott type excitons. It is shown, that with decreasing the particle size the energy position of the low-frequency Raman active phonons in both compounds are shifted to lower frequencies (21 and 18 cm -1 in bulk GaSe and InSe and 8 and 7 cm -1 in particles with sizes 5 and 7 nm, respectively). From the low frequency Raman data, decrease of the force constants ca. 25 % (for GaSe) due to the formation of the nanoparticles are estimated, and the origin is suggested. Second harmonic generation (SHG) with 1064 nm line of a mode locked Nd : YAG laser was observed for nanoparticles ablated on different substrates. Potential for using these structures for laser light visualizators are discussed.

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“…Granular metal films in all the samples were placed in a vacuum unit VUP-5 in the vacuum as high as 5×10 5 mm Hg. Evaporation of the metals under study was carried out from molybdenum boats placed 15 cm away from the substrate, at the substrate temperature 300°C.…”

Section: Preparation and Characterization Of Specimenmentioning

confidence: 99%

“…As noted in the study [5], indium has no interband absorption in the spectral range    2.26÷11 eV. Then the expression for the natural frequency of electrons in the granules can be simplified, being dependent only on the plasma frequency ω P and the dielectric constant ε 0 of the insulator surrounding the granules.…”

Section: Introductionmentioning

confidence: 96%

Study of plasma frequency for Al�In alloys with different concentrations

Zheng¹,

Biloshenko²,

Makarovskiy³

et al. 2017

Ukr. J. Phys. Opt.

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Abstract. In this work we report on spectrophotometric studies for two-layer granular films of Al-In alloys. The films are prepared using thermal precipitation in vacuum on roughened NaCl substrates heated to 300°C, with subsequent deposition of additional layer of a NaCl-substrate material. As a result, the two-layer granular films of the alloys are immured in the substrate material. The films reveal two bands of plasma optical absorption, low-and high-frequency ones. The results obtained are interpreted using a modified Hampe-Shklyarevsky theory.

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Electronic structure, optical properties, and lattice dynamics in atomically thin indium selenide flakes

Cited by 170 publications

References 69 publications

Atomic Layer Growth of InSe and Sb2Se3 Layered Semiconductors and Their Heterostructure

Atomic Layer Growth of InSe and Sb2Se3 Layered Semiconductors and Their Heterostructure

Linear and NLO spectroscopy of GaSe and InSe nanoparticles formed via laser ablation

Study of plasma frequency for Al�In alloys with different concentrations

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