Electronic structure of stoichiometric and substoichiometric vanadium nitrade from photoelectron spectroscopy

Indlekofer, G.; Mariot, J.‐M.; Lengauer, W.; Beauprez, E.; Oelhafen, P.; Hague, C. F.

doi:10.1016/0038-1098(89)90590-5

Cited by 27 publications

(19 citation statements)

References 20 publications

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“…The He I valence band signature of the 20 ML VN film of Fig. 2 compares well with the one reported previously in the literature for stoichiometric VN samples [16]. The He II spectrum of the 20 ML VN (top curve) is consistent with the He I spectrum and shows also the triangular-shaped V 3d non-bonding states at 0-2 eV and the N 2p-V 3d structure at 3-8 eV, but less fine structure is resolved in the latter than in the He I spectrum.…”

Section: Fig 1asupporting

confidence: 79%

“…The V 2p and N 1s core level binding energies are well within the range of binding energies reported for vanadium nitride in the literature [14,15] and thus specify the chemical identity of the overlayers to VN. The presence of the satellite structure at $516 eV, which has been ascribed to ''poorly screened'' core hole states [16], is typical for VN [17] and indicates that the VN formed is nearly stoichiometric [18]. Indeed, the evaluation of the V 2p and N 1s core level intensities using the tabulated atomic sensitivity factors for the different core levels [19] yields a formal stoichiometry of VN 0.9 .…”

Section: Fig 1amentioning

confidence: 99%

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The growth of epitaxial VN(111) nanolayer surfaces

et al. 2007

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Section: Fig 1asupporting

confidence: 79%

Section: Fig 1amentioning

confidence: 99%

The growth of epitaxial VN(111) nanolayer surfaces

et al. 2007

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“…All these properties have stimulated many detailed experimental and theoretical studies of their electronic structures. [3][4][5][6][7][8][9][10][11][12][13][14][15][16] The physical properties are primarily related to the electronic band structure. Stoichiometry deviation and structural disorder ͑vacancies, antisite, and interstitial atoms͒ influence the physical properties of these materials with open structures.…”

Section: Introductionmentioning

confidence: 99%

Chemical bonding and electronic structure in binary VNy and ternary T1−xVxNy nitrides

Sanjinés

Wiemer

Hones

et al. 1998

Journal of Applied Physics

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Core-level binding energies (BEs) and valence-band structures of VNy and Ti1−xVxNy films (0⩽x⩽1, 0.4⩽y⩽1.1), deposited by rf magnetron sputtering, have been investigated by x-ray photoemission spectroscopy. The core level BEs and valence-band spectra are discussed in relation to the microhardness (Knoop microindentation). The binding energy values and the shape of the core level peaks are representative of the chemical bonding between the elements, and are thus related to the microhardness. Comparison of the experimental spectra with various theoretical density of states calculations as a function of x and y shows evidence of the influence of nitrogen vacancies and of the vanadium content on the mechanical properties.

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“…The presence of the defect peaks is attributed to the interactions of the Ga vacancies with N atoms, as these atoms certainly have quite different bonding characteristics as compared to other atoms with Ga-N bonds having pure sp 3 bonding. Nevertheless, little change is observed in the difference between the Ga3d and N1s core level binding energies of the bulk peaks as compared to that of samples A and C [7]. This can be explained by the fact that the extent of charge transfer between the Ga and N atoms is insignificant, as there are limited interactions between the external electron shells of both atoms [8].…”

Section: Resultsmentioning

confidence: 84%