Electronic structure of perylene on Au studied by ultraviolet photoelectron spectroscopy and density functional theory

Electronic Band Structure of Tetracene−TCNQ and Perylene−TCNQ Compounds

“…Because there are no calculations on the band structure of TCNQ itself, contrary to the cases for tetracene 21 and perylene, 22 we consider it first. The band dispersion of the LUMO band in three main directions X(a*), Y(b*), and Z(c*) is almost isotropic.…”

Surface doping in T6/PDI-8CN2 heterostructures investigated by transport and photoemission measurements

“…Considering the equivalence of relative permittivity and dielectric constant in static conditions, ε R = 2.73 can be used for perylene [28]. N D has a value <= 5.7×10 18 corresponding to ~<=(7×10 -3 )e per molecule for a molecular density of about 8×10 20 mol·cm -3 [28]. Comparing T6 thick film energy levels with previous studies of growth on Au [21] and SiO 2 [22], our results are in agreement with a reduction of organic IP and inorganic WF, as well as with formation of interface dipoles and absence of charge transfer [23,24,25].…”

Organic Semiconductor Based Heterostructures for Optoelectronic Devices

“…Beside the wide band gap organic semiconductors [benzil, meta-dinitrobenzene (m-DNB)] studied for the first time from the point of view of the films' electrical properties, other organic semiconductors, which have attracted a great research interest, were: perylene: IE=5.1 eV (Kang, 2005), Eg=2.5 eV (Kang, 2005); 3,4,9,10-perylenetetracarboxylic dianhydride (PTCDA): IE=6.2 eV (Gao, 2003), IE=6.8 eV (Gao, 2001), Eg=2.2 eV ; tris (8-hydroxyquinoline) aluminium (Alq3): IE=5.7 eV (Hirose, 1996), IE=5.95 (Gao, 2001), EA=3.25 eV ; zinc phthalocyanine (ZnPc): IE=5.28 eV (Gao, 2002), Eg=1.94 eV (Gao, 2001;Gao, 2003);…”

“…For the structure realised with n type Si electrodes we have anticipated an increase in the number of electrons injected in PTCDA determined by the lower position of the energetic level associated with the electron affinity in PTCDA, calculated using IE given in paragraph 4.2, EA=4 eV or EA=4.6 eV compared to perylene, EA=2.6 eV. The band gap energy was considered Eg=2.2 eV in PTCDA and Eg=2.5 eV in perylene (Kang, 2005). For n type of Si electrodes and an applied voltage of 1 V, the current obtained experimentally in Si/perylene/Si structures, drawn in Figure 5.3 b, is one order of magnitude higher than the current obtained in Si/PTCDA/Si structures drawn in Figure 5.3 a.…”

“…This behaviour can be explained by the higher ionisation energy of -NPD compared to ZnPc that determines better injection properties for the contact ITO/ZnPc compared to ITO/ -NPD. Introducing a supplementary layer of perylene characterised by IE=5.1 eV (Kang, 2005) and Eg=2.5 eV (Kang, 2005) or PTCDA characterised by IE=6.8 eV and Eg=2.2 eV , the current passing through the structure ITO/ZnPc/Si decreases from I=2×10 -4 A to I=3×10 -6 A in the structure with a supplementary layer of perylene, and from I=2×10 -4 A to I=6×10 -8 A in the structure with a supplementary layer of PTCDA, for an applied voltage of 1 V. In Figure 8.2 can also be seen that, at voltages lower than 5 V the supplementary layer of -NPD has as effect a decrease in the value of the current in the structure ITO/perylene/Si while the supplementary layer of ZnPc has as effect an increase in the value of the current.…”