Optoelectronic Devices and Properties 2011
DOI: 10.5772/15603
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Organic Semiconductor Based Heterostructures for Optoelectronic Devices

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Cited by 1 publication
(2 citation statements)
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References 64 publications
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“…The samples for irradiation are bulk, mechanically polished slices of pure, crystalline benzil obtained from ingots with diameter ϕ = 10 mm, grown from melt by the Bridgman‐Stockbarger (B‐S) method . The melt growth could be used because benzil is characterized by good thermal stability at the melting point . The experimental set‐up (figure a) was realized by modifying the B‐S vertical configuration for assuring steep gradients at the melt‐crystal interface (12 °C/cm) and low moving speed of the growth interface (0.7 mm/h).…”
Section: Methodsmentioning
confidence: 99%
See 1 more Smart Citation
“…The samples for irradiation are bulk, mechanically polished slices of pure, crystalline benzil obtained from ingots with diameter ϕ = 10 mm, grown from melt by the Bridgman‐Stockbarger (B‐S) method . The melt growth could be used because benzil is characterized by good thermal stability at the melting point . The experimental set‐up (figure a) was realized by modifying the B‐S vertical configuration for assuring steep gradients at the melt‐crystal interface (12 °C/cm) and low moving speed of the growth interface (0.7 mm/h).…”
Section: Methodsmentioning
confidence: 99%
“…In the last decades, the organic molecular crystals have been considered as potential substitutes for inorganic crystals in nonlinear optical applications because of high nonlinear coefficients, large birefringence, high damage thresholds in laser beam and large transparency domain …”
Section: Introductionmentioning
confidence: 99%