Electronic Structure of Ferromagnetic Semiconductor<mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" display="inline"><mml:msub><mml:mi>Ga</mml:mi><mml:mrow><mml:mn>1</mml:mn><mml:mo>−</mml:mo><mml:mi>x</mml:mi></mml:mrow></mml:msub><mml:msub><mml:mi>Mn</mml:mi><mml:mi>x</mml:mi></mml:msub><mml:mi>As</mml:mi></mml:math>Probed by Subgap Magneto-optical Spectroscopy

Acbas, G.; Kim, Myoung-Hwan; Cukr, M.; Novák, V.; Scarpulla, Michael A.; Jungwirth, T.; Sinova, Jairo; Černe, J.

doi:10.1103/physrevlett.103.137201

Cited by 31 publications

(41 citation statements)

References 35 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…This is particularly valid for the infrared magneto-optical spectroscopy for which previous study [16] has shown that the disordered valence band theory with kinetic-exchange-split bands of ferromagnetic (Ga,Mn)As accounts semi-quantitatively for the overall characteristics of the measured data. We now extend the analysis to higher energies including transitions across the semiconductor band gap.…”

mentioning

confidence: 69%

Systematic Study of Mn-Doping Trends in Optical Properties of (Ga,Mn)As

et al. 2010

Self Cite

View full text Add to dashboard Cite

We report on a systematic study of optical properties of (Ga,Mn)As epilayers spanning the wide range of accessible substitutional MnGa dopings. The growth and post-growth annealing procedures were optimized for each nominal Mn doping in order to obtain films which are as close as possible to uniform uncompensated (Ga,Mn)As mixed crystals. We observe a broad maximum in the midinfrared absorption spectra whose position exhibits a prevailing blue-shift for increasing Mn-doping. In the visible range, a peak in the magnetic circular dichroism blue shifts with increasing Mndoping. These observed trends confirm that disorder-broadened valence band states provide a better one-particle representation for the electronic structure of high-doped (Ga,Mn)As with metallic conduction than an energy spectrum assuming the Fermi level pinned in a narrow impurity band.PACS numbers: 74.20. Mn, 74.25.Nf, 74.72.Bk, 74.76.Bz The discovery of ferromagnetism in (Ga,Mn)As above 100 K [1] opened an attractive prospect for exploring the physics of magnetic phenomena in doped semiconductors and for developing advanced concepts for spintronics. Assessment of a wide range of magnetic and transport properties of the material [2][3][4] showed that in ferromagnetic (Ga,Mn)As with Mn dopings x > 1%, disorderbroadened and shifted host Bloch bands represent a useful one-particle basis for describing this mixed-crystal degenerate semiconductor. The common kinetic-exchange model implementation of this valence band theory and the more microscopic tight-binding Anderson model or ab-initio density functional theory can all be shown [5] to be mutually consistent on the level of atomic and orbital resolved band structure. The main utility of valence band theories have been in providing a qualitative and often semi-quantitative description of phenomena originating from the exchange split and spin-orbit coupled electronic structure and in assisting the development of prototype spintronic devices [4]. Other basic physical properties of (Ga,Mn)As, namely those reflecting the vicinity of the metal-insulator transition and localization and electronelectron interaction effects, remain to be fully understood and require to go beyond the commonly employed perturbative or disorder averaged Bloch-band theories.In the insulator non-magnetic regime (x 1%), the system is readily described by localized Fermi level states residing inside a narrow impurity band separated from the valence band by an energy gap of magnitude close to the isolated Mn Ga impurity binding energy. Recently, a debate has been stirred by proposals, based in particular on optical spectroscopy measurements [6], that the narrow impurity band persists in high-doped (Ga,Mn)As with metallic conduction. Several phenomenological variants of the impurity band model have been proposed for the high-doped regime [6][7][8][9][10] which are mutually inconsistent from the perspective of the assumed atomic orbital nature of the impurity band states [5]. Further theoretical inconsistencies arise when recreating ...

show abstract

mentioning

confidence: 69%

Systematic Study of Mn-Doping Trends in Optical Properties of (Ga,Mn)As

et al. 2010

Self Cite

View full text Add to dashboard Cite

show abstract

“…Macroscopic magnetometry can only measure the total magnetic moment and cannot easily distinguish various contributions, so it cannot provide such information. Spectroscopically resolved magneto-optical measurements 10,11 are sensitive to the mobile holes, but careful modeling is required to extract their magnetization. Such measurements, like bulk magnetometry, report the net behaviour over a macroscopic region of the sample and yield no information on the microscopic magnetic inhomogeneity.…”

Section: Introductionmentioning

confidence: 99%

β-detected NMR of Li in Ga1−xMnxAs

Song

Chow²,

Salman

et al. 2011

Phys. Rev. B

View full text Add to dashboard Cite

“…These values are consistent with previous reports in (Ga,Mn)As compounds. 25,26,29,30,32,57 Let us note however that their respective amplitudes depend on the layer thickness (Eq. (3)).…”

Section: Moke Spectramentioning

confidence: 99%

“…6,18,19 Magneto-optical microscopy uses the MOKE to gain insight into the magnetic domains static pattern 7,20,21 and the domain wall dynamics. 22 While the MO effects in (Ga,Mn)As have been extensively investigated, [13][14][15][16][23][24][25][26][27][28][29][30][31][32][33][34] the MO properties of (Ga,Mn) (As,P) thin films, more specifically the interplay between the Mn doping and P substitution, remain to be investigated. Hence, in the present study, we report on the MOKE in the interband transition range for ferromagnetic (Ga,Mn)(As,P) samples with different P and Mn contents.…”

Section: Introductionmentioning

confidence: 99%

Magneto-optical Kerr spectroscopy of (Ga,Mn)(As,P) ferromagnetic layers: Experiments and k.p theory

Yahyaoui

Riahi

Maaref

et al. 2017

Journal of Applied Physics

View full text Add to dashboard Cite

We present a theoretical and experimental study of the magneto-optical properties of thin (Ga,Mn) (As,P) layers on GaAs substrates with varying phosphorus fractions. Using a 40-band k.p model as well as an antiferromagnetic (s, p)-d exchange interaction, we calculate the dielectric tensor, the Kerr rotation angle, and the ellipticity in the interband transition region. Our calculations are validated through a set of accurate comparisons with experimental results. The Kerr ellipticity peak is found to be 2 to 3 times larger than the Kerr rotation angle both experimentally and theoretically. This work will enable to optimize the magneto-optical effects in these layers for maximum sensitivity in ultra-fast magnetization dynamics and domain microscopy experiments. Published by AIP Publishing.

show abstract

Electronic Structure of Ferromagnetic SemiconductorGa1−xMnxAsProbed by Subgap Magneto-optical Spectroscopy

Cited by 31 publications

References 35 publications

Systematic Study of Mn-Doping Trends in Optical Properties of (Ga,Mn)As

Systematic Study of Mn-Doping Trends in Optical Properties of (Ga,Mn)As

β-detected NMR of Li in Ga1−xMnxAs

Magneto-optical Kerr spectroscopy of (Ga,Mn)(As,P) ferromagnetic layers: Experiments and k.p theory

Contact Info

Product

Resources

About