2011
DOI: 10.1103/physrevb.84.054414
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β-detected NMR of Li in Ga1xMnxAs

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Cited by 14 publications
(8 citation statements)
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“…We also note that the linewidth in the TI layer increases with decreasing T, in contrast with the non-TI material, GaAs (10). Another feature we observe is a considerably broader linewidth for the TI surface layer compared with the TI bulk, a result that is opposite of that observed for trivial (non-TI) semiconductors (26).…”
Section: Resultscontrasting
confidence: 46%
See 1 more Smart Citation
“…We also note that the linewidth in the TI layer increases with decreasing T, in contrast with the non-TI material, GaAs (10). Another feature we observe is a considerably broader linewidth for the TI surface layer compared with the TI bulk, a result that is opposite of that observed for trivial (non-TI) semiconductors (26).…”
Section: Resultscontrasting
confidence: 46%
“…S6C). Finally, in a β-NMR investigation in GaAs (E g = 1.4 eV, 300 K) in which the effect of implantation energy was studied, no detectable Knight shift was reported in the case of n-GaAs, as the beam energy decreased from 28 to 3 keV (26). In that same study, no concomitant line broadening was observed, as would be expected of a transition to a metallic state.…”
Section: Resultsmentioning
confidence: 87%
“…4). Thus, a priori, it is not clear how useful 8 Li β-NMR will be in strongly magnetic materials, though there are a few reports in ferromagnets [27,[33][34][35]. The present results provide another example where, at low temperature, the combination of the high applied field and the weak hyperfine coupling of 8 Li make the relaxation in EuO measurable at low temperature.…”
Section: Discussionmentioning
confidence: 80%
“…Hyperfine coupling to dilute Ti 3+ moments would naturally yield a broadening, due to the distribution of distances to the 8 Li probe. If, however, the Ti 3+ are dense enough that there is a uniform component to the susceptibility near the percolation limit of the metallic state, then a hyperfine coupling could result in a resonance shift as was found in the dilute magnetic semiconductor Ga 1−x Mn x As [46]. Interestingly, K approaches zero (K vs.MgO = −19 ppm), near the temperature where the Li begins to move T ≈ 100 K. Overall, the resonance results are broadly consistent with the interpretation of 1/T 1 and the μ + SR measurements.…”
Section: A Spin-lattice Relaxation In LI 4 Ti 5 O 12mentioning
confidence: 91%