Electronic structure of delta-doped La:SrTiO₃ layers by hard x-ray photoelectron spectroscopy

Abstract

Bulk and surface half-metallicity: Metastable zinc-blende TiSb J. Appl. Phys. 112, 023712 (2012) Electronic structures of the SrTiO3(110) surface in different reconstructions J. Chem. Phys. 137, 044701 (2012) Electronic structure and thermoelectric properties of nanostructured EuTi1−xNbxO3−δ (x=0.00; 0.02) Appl. Phys. Lett. 101, 033908 (2012) Negative spin polarization at the Fermi level in Fe4N epitaxial films by spin-resolved photoelectron spectroscopy J. Appl. Phys. 112, 013911 (2012) Abnormal electronic transition variations of lanthanum-modified lead zironate stannate titanate ceramics near morphotropic phase boundary: A spectroscopic evidence

Final-state effect on x-ray photoelectron spectrum of nominallyd1andn-dopedd0transition-metal oxides

“…First, the Ti 3+ peak position is dopant independent and is an intrinsic property of the Ti atom, or more precisely the TiO 6 cluster. Indeed, in lightly n-doped SrTiO 3 , the Ti 3+ peaks all appear in the same position relative to the Ti 4+ peak [17][18][19] (Fig. 5) [47]), demonstrate the XPS spectra showing multiple components.…”

“…In this paper, we reexamine the origin of the multi-peak structure in the XPS spectra of nominally d 1 transition metal oxides including NbO 2 , SrVO 3 [16], and LaTiO 3 , as well as that of lightly n-doped d 0 SrTiO 3 (STO) [17][18][19],…”

Hard X-ray PhotoElectron Spectroscopy of transition metal oxides: Bulk compounds and device-ready metal-oxide interfaces

“…HAXPES is able to provide depth sensitivity into the bulk even beyond 50 nm [61,20], thus large enough to perform non-destructive studies of deep regions and buried interfaces [62], e.g., for metal-oxide-semiconductor structures [63], oxide-oxide heterojunctions [64,65], metal-oxide interfaces for nonvolatile memory applications [66,67] or metal-organic interfaces of hybrid spintronic devices [68]. Core level spectra representative for the upper Ti electrode and the underlying PCMO were collected, namely Ti 2p and Mn 2p, for systems set in four different states.…”

Evidence of extreme type-III band offset at buriedn-typeCdO/p-type SnTe interfaces

“…X-ray photoelectron spectroscopy provides a sensitive probe for measuring the energetic alignment at interfaces by directly measuring the valence band offset, but it is often restricted by its extremely surface sensitive nature. Progress in the development and application of HAXPES in the last decade has enabled studies of the valence band offset of buried interfaces [17][18][19] . Using an effective probing depth of 15 nm, we are able to distinguish between bulk, surface, and interfacial chemical contributions, and accurately determine the valence band offset.…”